A variable resistance memory device including a stack including insulating sheets and conductive sheets, which are alternatingly stacked on a substrate, the stack including a vertical hole vertically penetrating therethrough, a bit line on the stack, a conductive pattern electrically connected to the bit line and vertically extending in the vertical hole, and a resistance varying layer between the conductive pattern and an inner side surface of the stack defining the vertical hole may be provided. The resistance varying layer may include a first carbon nanotube electrically connected to the conductive sheets, and a second carbon nanotube electrically connected to the conductive pattern.

An organic molecular memory includes a first electrode, a second electrode above the first electrode in a first direction, an organic molecule layer between the first and second electrodes and including a first molecule and a second molecule, the second molecule being closer to the second electrode than the first molecule, and a third electrode facing the second molecule. Each of the first and second molecules includes a metal complex or a fullerene derivative.

An organic molecular memory includes a first electrode, a second electrode above the first electrode in a first direction, an organic molecule layer between the first and second electrodes and including a first molecule and a second molecule, the second molecule being closer to the second electrode than the first molecule, and a third electrode facing the second molecule. Each of the first and second molecules includes a metal complex or a fullerene derivative.

The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.

The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.

Disclosed are a self-healing memory device including a lower electrode; a polymer nanocomposite layer formed on the lower electrode, wherein, when a structural defect occurs, the polymer nanocomposite layer repairs the structural defect and restores a memory function damaged due to the structural defect through a self-healing mechanism characterized by movement of a polymer material and hydrogen bonding; and an upper electrode formed on the polymer nanocomposite layer and a method of manufacturing the self-healing memory device.

A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al.sub.2O.sub.3 layer. The insertion layer includes an Al.sub.2O.sub.3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200 C. or higher.

A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al.sub.2O.sub.3 layer. The insertion layer includes an Al.sub.2O.sub.3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200 C. or higher.

Provided is a biodegradable memristor including: a substrate; a lower electrode formed on the substrate; a solid polymer electrolyte (SPE) layer formed on the lower electrode; and a magnesium electrode formed on the SPE layer.

Provided is a biodegradable memristor including: a substrate; a lower electrode formed on the substrate; a solid polymer electrolyte (SPE) layer formed on the lower electrode; and a magnesium electrode formed on the SPE layer.