A memory cell includes a first conductive line, a lower electrode, a carbon nano-tube (CNT) layer, a middle electrode, a resistive layer, a top electrode and a second conductive line. The first conductive line is disposed over a substrate. The lower electrode is disposed over the first conductive line. The carbon nano-tube (CNT) layer is disposed over the lower electrode. The middle electrode is disposed over the carbon nano-tube layer, thereby the lower electrode, the carbon nano-tube (CNT) layer and the middle electrode constituting a nanotube memory part. The resistive layer is disposed over the middle electrode. The top electrode is disposed over the resistive layer, thereby the middle electrode, the resistive layer and the top electrode constituting a resistive memory part. The second conductive line is disposed over the top electrode.

Programmable memory devices having a cross-point array of polymer junctions with individually-programmed conductances are provided. In one aspect, a method of forming a memory device includes: forming first metal lines on an insulating substrate; forming polymeric resistance elements on the first metal lines; and forming second metal lines over the polymeric resistance elements with a single one of the polymeric resistance elements present at each intersection of the first/second metal lines forming a cross-point array. A memory device and a method of operating a memory device are also provided.

Programmable memory devices having a cross-point array of polymer junctions with individually-programmed conductances are provided. In one aspect, a method of forming a memory device includes: forming first metal lines on an insulating substrate; forming polymeric resistance elements on the first metal lines; and forming second metal lines over the polymeric resistance elements with a single one of the polymeric resistance elements present at each intersection of the first/second metal lines forming a cross-point array. A memory device and a method of operating a memory device are also provided.

Provided is a microswitch including a first electrode, a second electrode, and a porous coordination polymer conductor, in which the porous coordination polymer conductor is represented by the following Formula (1), and a metal forming the first electrode and a metal forming the second electrode have different oxidation-reduction potentials,

[ML.sub.x].sub.n(D).sub.y  (1),

where M represents a metal ion selected from group 2 to group 13 elements in a periodic table, L represents a ligand that has two or more functional groups capable of coordination to M in a structure of L and is crosslinkable with two M's, D represents a conductivity aid that includes no metal element, x represents 0.5 to 4 and y represents 0.0001 to 20 with respect to x as 1, n represents the number of repeating units of a constituent unit represented by [ML.sub.x], and n represents 5 or more.

Various embodiments relate to a method for producing a metal-organic framework (MOF) having a desired redox conductivity and including redox-active linkers, having w-alkyl-ferrocene groups, via de novo solvothermal synthesis. Various embodiments relate to a metal-organic framework (MOF) linker comprising an w-alkyl-ferrocene group. Various embodiments relate to a metal-organic framework (MOF), having a first plurality of redox-active linkers, each having an ω-alkyl-ferrocene group. The MOF according to various embodiments, may further have one or more redox-inactive linkers. Various embodiments relate to materials, apparatuses, and components that include the MOF according to various embodiments. For example, various embodiments relate to thin-films, bulk powders, or electrodes.

The present disclosure relates to a composition that includes a perovskite of A.sub.2BX.sub.4, where A includes an R-form of a chiral molecule of at least one of

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and/or an S-form of the chiral molecule, B includes a cation, X includes an anion, R.sub.1 includes a first carbon chain having between 2 and 5 carbon atoms, R.sub.2 includes at least one of a hydrogen atom, a halogen atom, a carboxylic acid group, an alkoxy group, and/or a second carbon chain, and R.sub.3 includes a third carbon chain.

Cationic radial catenane comprising a central cationic ring and two or more radial cationic rings mechanically interlocked central cationic ring and methods for making the same are disclosed herein.

The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.

The present disclosure relates to a neuron behavior-imitating electronic synapse device and a method of fabricating the same. According to one embodiment, the neuron behavior-imitating synapse device includes a first electrode having a lithium-doped surface, an active layer formed on the first electrode and including a polyelectrolyte and one or more metal nanoparticles, and a second electrode formed on the active layer.

A display unit, a display substrate, a driving method of the display substrate and a display device are provided. The display unit includes a first electrode, a second electrode disposed above the first electrode, a functional layer disposed between the first electrode and the second electrode, and the functional layer includes a luminescent material with electrical bistable characteristics. The display unit is provided with the functional layer of the luminescent material with the electrical bistable characteristics, so that the display unit can emit light when being in a high conductivity state and still keep emitting light after being de-energized, and does not emit light when being in a low conductivity state, thereby realizing display and non-display of the display unit.