A circuit is disclosed that includes a first electrode, a second electrode and a plurality of quantum dot devices disposed between the first electrode and the second electrode. An impedance is coupled to the second electrode and has a value selected to conduct or block conduction of current when a coherent electron conduction band is formed by one or more of the quantum dot devices, such as with quantum dot devices in an adjacent circuit.

The present invention relates to an inorganic/organic hybrid perovskite compound film. An inorganic/organic hybrid perovskite compound film according to the present invention is polycrystalline, and has a discontinuous (100) plane scattering intensity on a grazing incidence wide angle x-ray scattering (GIWAXS) spectrum obtained using an x-ray wavelength of 1.0688 .

The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.

The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.

A display panel, a method for fabricating the same and a display device are disclosed. The display panel includes a top emission AMOLED display sub-panel, a normally-white mode reflective display sub-panel provided on the top emission AMOLED display sub-panel, and a switching element configured to turn on the top emission AMOLED display sub-panel and turn off the normally-white mode reflective display sub-panel according to a received first instruction, and turn on the normally-white mode reflective display sub-panel and turn off the top emission AMOLED display sub-panel according to a received second instruction.

An electronic component (10) comprising a plurality of switching elements (1) which comprise, in this sequence, a first electrode (16), a molecular layer (18) bonded to a substrate, and a second electrode (20), where the molecular layer essentially consists of molecules (M) which contain a connecting group (V) and an end group (E) having a polar or ionic function, is suitable as memristive device for digital information storage.

A circuit is disclosed that includes a first electrode, a second electrode and a plurality of quantum dot devices disposed between the first electrode and the second electrode. An impedance is coupled to the second electrode and has a value selected to conduct or block conduction of current when a coherent electron conduction band is formed by one or more of the quantum dot devices, such as with quantum dot devices in an adjacent circuit.

Provided are a luminous member, a method of driving the luminous member, a non-volatile memory device, a sensor, a method of driving the sensor, and a display apparatus. The luminous member includes a first electrode; a second electrode facing the first electrode; an emission layer, which is disposed on a main surface of the first electrode and emits light by power applied between the first electrode and the second electrode; and a ferrodielectric layer disposed between the emission layer and the second electrode, wherein AC power applied to the luminous member is controlled based on polarity or magnitude of a residual polarization generated in the ferrodielectric layer, thereby adjusting emission characteristics of the emission layer.

In a first aspect of the present disclosure, there is provided a nonvolatile memory device comprising: two electrodes; and a protein switching layer interposed between the two electrodes and including an amino acid, wherein then a voltage is applied to one of the electrodes, the amino acid chelates with an active electrode material to form a conductive filament, wherein the formation of the conductive filament allows a resistance state of the device to vary.

An organic memristor/memcapacitor device comprises a biomimetic membrane attached on the surface of an electrode forming variable size toroidal matrix cross-linked to derivative cyclodextrin polymers forming cross bars, that facilitate a dual functioning biosensor characteristics which enabled to detecting voltage and current changes of a biomarker -amyloid (A) in pM concentration that direct linked to Alzheimer's disease and other neurodegenerative diseases under reagent-less, tracer-free and antibody-free conditions in biological fluid specimens.