The present invention relates to a method and a device for providing a current of spin-polarized electrons. More particularly, the present invention is suited for use in spin electronics or detection of spin-polarized electrons.

An electronic element (10) comprising a plurality of cells (100) arranged in a three dimensional array of cells (100) is provided, wherein the cells (100) are located at crossings between two crossed electrode lines (30, 31). Each cell (100) of the electronic component (100) comprises in this order a first electrode (102), a part (104) of a molecular layer (20) and a second electrode (106), wherein the molecular layer (20) is a self-assembled monolayer of organic molecules having an anchoring group connected to a dipolar unit by means of a conformationally flexible unit.

Further aspects of the invention relate to a method and a compound for producing such an electronic element (10) and the use of such an electronic element (10).

The application relates to a strongly-polarized molecule of the following general formula: wherein A denotes a group having a polarizability greater than 2 C.Math.m.sup.2/V; R.sub.1 and R.sub.2 are respectively hydrogen, halogen, a hydroxyl group, an amino group, a cyano group, a nitro group, a carboxyl group, a C.sub.1-12 alkyl group, a C.sub.1-12 alkoxy group, a halogenated C.sub.1-12 alkyl group, a halogenated C.sub.1-12 alkoxy group, a hydroxyl C.sub.1-12 alkyl group, a hydroxyl C.sub.1-12 alkoxy group, or a C.sub.1-12 alkyl amino group; x.sub.1 and x.sub.2 denote 0 or an integer no less than 1, respectively; and y.sub.1 and y.sub.2 denote 0 or an integer no less than 1, respectively. The application further relates to a strongly-polarized molecule-graphene molecule heterojunction, and a single molecule field effect transistor comprising a substrate, a gate, a dielectric layer and the strongly-polarized molecule-graphene molecule heterojunction; and the dielectric layer is located between the gate and the strongly-polarized molecule-graphene molecule heterojunction. The single molecule field effect transistor provided by the application can realize highly-efficient gate modulation. ##STR00001##

The present invention relates to a compounds of formula I
R.sup.1-(A.sup.1-Z.sup.1).sub.rB.sup.1Z.sup.L-A.sup.2-(Z.sup.3-A.sup.3).sub.s-G(I)
in which the occurring groups and parameters have the meanings given in claim 1, to the use thereof for the formation of molecular layers, in particular self assembled monolayers, to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

The invention relates to tuned multifunctional linker molecules for charge transport through organic-inorganic composite structures. The problem underlying the present invention is to provide multifunctional linker molecules for tuning the conductivity in nanoparticle-linker assemblies which can be used in the formation of electronic networks and circuits and thin films of nanoparticles. The problem is solved according to the invention by providing a multifunctional linker molecule of the general structure
CON.sub.1-FUNC.sub.1-X-FUNC.sub.2-CON.sub.2
in which X is the central body of the molecule, FUNC.sub.1 and FUNC.sub.2 independently of each other are molecular groups introducing a dipole moment and/or capable of forming intermolecular and/or intramolecular hydrogen bonding networks, and CON .sub.1 and CON .sub.2 independently of each other are molecular groups binding to nanostructured units comprising metal and semiconductor materials.

A logic circuit for performing a logic operation comprising a plurality of predetermined solid-state molecular chips, each molecular chip having multiple states obtained after application of a corresponding input. After applying predetermined inputs on the molecular chips, reading the states of the molecular chips produces a logical output according to the logic operation.

The present invention relates to a method for forming nano-gaps in graphene. The method may include applying a voltage across a region of graphene such that a nano-gap which extends across the entire width of the graphene is formed, wherein the region across which the voltage is applied may include a point which is the narrowest in the region.

An electrical device in provided having two electrodes separated from one another, wherein one temperature controlled electronic spin-state transition particle is in direct contact with each of the two electrodes, the particle being of the ionic type and containing a transition metal bearing a cationic charge.

Provided is an electronic element that functions as a switch or memory without using metal nanoparticle. The electronic element includes: one electrode 5A and an other electrode 5B arranged to have a nanogap therebetween; and halide ion 6 provided between the electrodes 5A and 5B; and on one of the electrodes.

Disclosed herein are diamondoid materials in quantum computing devices, as well as related methods, devices, and materials. For example, in some embodiments, a quantum computing device may include: qubit circuitry, an interconnect in conductive contact with the qubit circuitry, and a dielectric material proximate to the interconnect, wherein the dielectric material includes a diamondoid film.