H10K10/80

Salts of cyclopentadiene as n-dopants for organic electronics

An organic electron transport layer has at least one dopant for increasing the n-conductivity of the organic layer. The dopant is selected from the group of salts of cyclopentadiene compounds according to formula 1, wherein the substituents R1 to R2 are independently selected from the group containing H, -D, halogen, CN, NO2, OH, amine, ether, thioether, alkyl, cycloalkyl, acrylic, vinyl, allyl, aromatics, fused aromatics and heteroaromatics.

Flexible array substrate structure and manufacturing method for the same

A flexible array substrate structure and manufacturing method thereof are disclosed, in which the patterning process of an organic semi-conductive layer is achieved by using the inside wall of the opening of a color film layer as a bank, so that one mask can be saved. Also, a process for manufacturing a device can be simplified by an improved device structure, so that the flexible array substrate structure of the invention can be obtained by only using four masks.

CARBON NANOTUBE INTERLAYER, MANUFACTURING METHOD THEREOF, AND THIN FILM TRANSISTOR USING THE SAME

The present invention relates to a carbon nanotube interlayer, a manufacturing method thereof, and a thin film transistor using the same. More specifically, the present invention provides a carbon nanotube interlayer, a manufacturing method thereof, and a thin film transistor using the same, where the carbon nanotube interlayer is a layer constituting an organic thin film transistor and comprising a conjugated polymer and a single-walled carbon nanotube between an organic semiconductor layer and a source/drain electrode. The conjugated polymer selectively wraps the single-walled carbon nanotube having semiconducting properties.

ELECTRONIC DEVICE INCLUDING PHOSPHINE OXIDE FUNCTIONALIZED TRIAZINE DERIVATIVE AND NOVEL PHOSPHINE OXIDE FUNCTIONALIZED TRIAZINE DERIVATIVE
20170141324 · 2017-05-18 ·

Provided are an electronic device including a novel structured interface material capable of improving interface properties of the electronic device, and the novel interface material, and more specifically, an electronic device including the interface material of the present disclosure to allow easy extraction and injection of electrons, thereby exhibiting excellent interface properties, and a phosphine oxide functionalized triazine derivative having a structure in which an electron acceptor phosphine oxide group is substituted in 1,3,5-triazine-based skeleton, which is the interface material.

Electronic device including phosphine oxide functionalized triazine derivative and novel phosphine oxide functionalized triazine derivative

Provided are an electronic device including a novel structured interface material capable of improving interface properties of the electronic device, and the novel interface material, and more specifically, an electronic device including the interface material of the present disclosure to allow easy extraction and injection of electrons, thereby exhibiting excellent interface properties, and a phosphine oxide functionalized triazine derivative having a structure in which an electron acceptor phosphine oxide group is substituted in 1,3,5-triazine-based skeleton, which is the interface material.

Light-Emitting Device and Display Device

A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.