A transistor comprises a channel region between a source region and a drain region, a dielectric material adjacent to the channel region, an electrode adjacent to the dielectric material, and an electrolyte between the dielectric material and the electrode. Related semiconductor devices comprising at least one transistors, related electronic systems, and related methods are also disclosed.

A flexible display apparatus includes: a flexible substrate including a first surface and a second surface which is opposite to the first surface; a first display unit which displays an image with light and is on the first surface of the flexible substrate, the first display unit including a transmission area at which light from the flexible substrate passes through the first display unit to outside the first display unit; and a second display unit which displays an image with light and is on the second surface of the flexible substrate, the second display unit disposed corresponding to the transmission area of the first display unit on the first surface of the flexible substrate

An imaging element which is formed by sequentially stacking at least an anode, an anode-side buffer layer, a photoelectric conversion layer, and a cathode, in which the anode-side buffer layer includes a material having structural formula

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in which thiophene and carbazole are combined.

An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×10.sup.10 s.sup.−1 to 1×10.sup.16 s.sup.−1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductors.

An imaging element includes a photoelectric conversion unit formed by laminating a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22. Between the first electrode 21 and the photoelectric conversion layer 23A, a first semiconductor material layer 23B.sub.1 and a second semiconductor material layer 23B.sub.2 are formed from the first electrode side, and the second semiconductor material layer 23B.sub.2 is in contact with the photoelectric conversion layer 23A. The photoelectric conversion unit further includes an insulating layer 82 and a charge accumulation electrode 24 disposed apart from the first electrode 21 so as to face the first semiconductor material layer 23B.sub.1 via the insulating layer 82. When the carrier mobility of the first semiconductor material layer 23B.sub.1 is represented by μ.sub.1, and the carrier mobility of the second semiconductor material layer 23B.sub.2 is represented by μ.sub.2, μ.sub.2<μ.sub.1 is satisfied.

A method for fabricating at least a portion of a complementary circuit, such as a complementary inverter circuit, includes fabricating a first sheet and a second sheet. Each of the sheets includes metal layers, a dielectric layer, and a semiconductor channel layer, configured so as to form a plurality of transistors of a respective polarity (i.e., P-type for one sheet, N-type for the other). The method also includes placing a layer of conductive material, such as anisotropic conducting glue (ACG) or anisotropic conducting foil (ACF), on the first sheet, and bonding at least a portion of the second sheet to the first sheet such that the conductive material is disposed between and in contact with the top-most metal layers of the first and second sheets. Separately fabricating the two sheets of different polarity may improve yields and/or decrease costs as compared to fabricating both polarities on a single substrate.

The present invention proposes an array substrate and a method for fabricating the same. According to the array substrate and the method of fabricating the array substrate in the present invention, the IGZO pattern and the first electrode strip, the first channel, and the second metallic layer in the corresponding section form the first transistor of the CMOS inverter, and the OSC pattern and the second electrode strip, the second channel, and the second metallic layer in the corresponding section form the second transistor of the CMOS inverter. In this way, the CMOS inverter or the CMOS ring oscillator is fabricated based on IGZO and OSC.

An organic light emitting display panel and a method for manufacturing the same are provided. The organic light emitting display panel includes: an organic light emitting element array substrate; a thin film encapsulation layer covering the organic light emitting element array substrate and including at least one inorganic layer and at least one organic layer; a wettability adjustment layer disposed on an organic layer or inorganic layer of the thin film encapsulation layer and including a plurality of wettability adjustment pattern zones and a plurality of hollow zones, and touch electrodes made of metal. The touch electrodes are in a meshed shape and disposed in the hollow zones. A wetting angle between material of the touch electrodes and the wettability adjustment pattern zones is greater than a wetting angle between the material of the touch electrodes and the organic layer or the inorganic layer.

A display device includes a first bank and a second bank spaced apart from each other on a substrate, at least one semiconductor layer disposed between the first bank and the second bank, a first electrode disposed on the first bank and electrically connected to a part of the at least one semiconductor layer, an organic functional layer disposed on another part of the semiconductor layer and comprising at least an organic light emitting layer, and a second electrode disposed on the organic functional layer.

A light emitting element includes a first electrode, a second electrode overlapping the first electrode, and an emission layer between the first electrode and the second electrode. The emission layer includes a quantum well that includes a first layer and a second layer, each having a different band gap. The first layer includes magnesium, and the second layer includes zinc. The first layer and the second layer are amorphous.