An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.

A display system includes (a) a display element having an organic light emitting diode-containing display active area disposed over a silicon backplane, (b) a display driver integrated circuit (DDIC) attached to the display element and electrically connected with the display active area, and (c) a thermal barrier disposed within the silicon backplane, where the thermal barrier is configured to inhibit heat flow through the silicon backplane and into the display active area.

A display device includes a first substrate including a display area in which a plurality of pixels are arranged and a light transmitting area disposed in the display area, an interlayer insulating layer covering the display area and exposing the light transmitting area, an inner sidewall of the interlayer insulating layer defining the light transmitting area, and an inorganic film disposed directly on the first substrate in the light transmitting area and overlapping the entire light transmitting area. A size of the light transmitting area is larger than a size of a pixel of the plurality of pixels.

A display apparatus includes a buffer layer on a substrate, a first hole penetrating the buffer layer and exposing a portion of the substrate, a display layer with display elements and bypass lines on the buffer layer, a second hole penetrating the display layer and connected to the first hole, and an encapsulation member covering the display elements and the bypass lines. The bypass lines are configured to extend along a portion of a perimeter of the second hole and are disposed between the second hole and the display elements. At least a portion of an upper surface of the buffer layer is exposed by the second hole.

A display apparatus includes a buffer layer on a substrate, a first hole penetrating the buffer layer and exposing a portion of the substrate, a display layer with display elements and bypass lines on the buffer layer, a second hole penetrating the display layer and connected to the first hole, and an encapsulation member covering the display elements and the bypass lines. The bypass lines are configured to extend along a portion of a perimeter of the second hole and are disposed between the second hole and the display elements. At least a portion of an upper surface of the buffer layer is exposed by the second hole.

A display device includes a first bank and a second bank spaced apart from each other on a substrate, at least one semiconductor layer disposed between the first bank and the second bank, a first electrode disposed on the first bank and electrically connected to a part of the at least one semiconductor layer, an organic functional layer disposed on another part of the semiconductor layer and comprising at least an organic light emitting layer, and a second electrode disposed on the organic functional layer.

A display device includes a first bank and a second bank spaced apart from each other on a substrate, at least one semiconductor layer disposed between the first bank and the second bank, a first electrode disposed on the first bank and electrically connected to a part of the at least one semiconductor layer, an organic functional layer disposed on another part of the semiconductor layer and comprising at least an organic light emitting layer, and a second electrode disposed on the organic functional layer.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode and formed using a plurality of materials having average particle diameters different from each other, the plurality of materials including at least fullerene or a derivative thereof.

A pixel, is provided the pixel comprising: a photodiode structure built on top of an integrated circuit generating a charge; the integrated circuit comprising at least one semiconductor material and at least one interconnect layer; the at least one interconnect layer comprises an interconnect to facilitate charge flowing into a collection node disposed in the semiconductor material; the interconnect being in contact with a doped contact diffusion disposed proximate to the collection node; a transfer transistor disposed between the collection node and a conversion node, the conversion node coupled to an active transistor; the pixel having a reset configured to reset the conversion node.

A sensor assembly for determining one or more features of a local area is presented herein. The sensor assembly includes a plurality of stacked sensor layers. A first sensor layer of the plurality of stacked sensor layers located on top of the sensor assembly includes an array of pixels. The top sensor layer can be configured to capture one or more images of light reflected from one or more objects in the local area. The sensor assembly further includes one or more sensor layers located beneath the top sensor layer. The one or more sensor layers can be configured to process data related to the captured one or more images. A plurality of sensor assemblies can be integrated into an artificial reality system, e.g., a head-mounted display.