A circuit is disclosed that includes a first electrode, a second electrode and a plurality of quantum dot devices disposed between the first electrode and the second electrode. An impedance is coupled to the second electrode and has a value selected to conduct or block conduction of current when a coherent electron conduction band is formed by one or more of the quantum dot devices, such as with quantum dot devices in an adjacent circuit.

The invention discloses a dopamine-based self-polymerization electric storage material and a preparation method thereof and the application thereof in an electric storage device, and the self-polymerization of dopamine is generated by solving the problems of complicated preparation process, poor environment and high temperature stability of the current organic electric storage material. The organic electric storage device prepared by the polymer into a sandwich structure successfully realizes the organic electric storage behavior. In the preparation process, the molecular synthesis and the device preparation are completed simultaneously, the device environment and the high temperature stability are good, and it is of great significance to the research progress of the organic electric storage technology and practical value.

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

An array substrate, manufacturing method thereof, and display device are disclosed. The array substrate includes signal lines; IC connection lines; the IC connection lines include at least two IC connection line groups, the at least two IC connection line groups comprise a first IC connection line group and a second IC connection line group, the array substrate further includes a lead, an orthographic projection of the lead on a straight line in a second direction is overlapped or connected with an orthographic projection of a first IC connection line in the first IC connection line group which is closest to the second IC connection line group on the straight line in a second direction and an orthographic projection of the second IC connection line in the second IC connection line group which is closest to the first IC connection line group on the straight line in a second direction respectively.

A neuromorphic device is provided. The neuromorphic device may include a pre-synaptic neuron; a row line extending in a row direction from the pre-synaptic neuron; a post-synaptic neuron; a column line extending in a column direction from the post-synaptic neuron; and a synapse disposed at an intersection between the row line and the column line. The synapse may include a first synapse layer including a plurality of first carbon nano-tubes; a second synapse layer including a plurality of second carbon nano-tubes having different structures from the plurality of first carbon nano-tubes; and a third synapse layer including a plurality of third carbon nano-tubes having different structures from the plurality of first carbon nano-tubes and the plurality of second carbon nano-tubes.

A memory device according to an embodiment includes a first conductive layer, a second conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and an organic molecular layer disposed between the variable resistance layer and the second conductive layer and containing organic molecules. Each of the organic molecules includes a first fused polycyclic unit having a first HOMO level, a second fused polycyclic unit having a second HOMO level higher in energy than the first HOMO level, and a third fused polycyclic unit disposed between the first fused polycyclic unit and the second fused polycyclic unit. The third fused polycyclic unit has a third HOMO level higher in energy than the first HOMO level and the second HOMO level.

A memristive/memcapacitive device with vertex double-helical polarized biomimetic protein nanotubules forming double membranes with potential gradient mimicking mitochondria's inner double membrane was invented. The memristive/memcapacitive device comprises a cross-linked conductive organic polymer having a single-wall cross-bar polarized nanotube self-assembling membrane (SAM) on a gold chip with a minimum 5 nm space between the nanotubes. Under an applied potential, a pair of vertex double-helical circular current flow induced the Fermi arcs states promoting a direct chelating with zinc ions of the Matrix Metalloproteinase (MMP-2), that made a dual-functioning direct ultrasensitive detection of protein in an attomolar concentration possible without a procedure of cycteine switch under label-free, probe-free and reagent-free conditions. The energy harvesting feature is also disclosed.

The present disclosure generally relates to combinations of resistive change elements and resistive change element arrays thereof. The present disclosure also generally relates to combinational resistive change elements and combinational resistive change element arrays thereof. The present disclosure additionally generally relates to devices and methods for programming and accessing combinations of resistive change elements. The present disclosure further generally relates to devices and methods for programming and accessing combinational resistive change elements.

A nanostructured cross-wire memory architecture is provided that can interface with conventional semiconductor technologies and be electrically accessed and read. The architecture links lower and upper sets of generally parallel nanowires oriented crosswise, with a memory element that has a characteristic conductance. Each nanowire end is attached to an electrode. Conductance of the linkages in the gap between the wires encodes the information. The nanowires may be highly-conductive, self-assembled, nucleic acid-based nanowires enhanced with dopants including metal ions, carbon, metal nanoparticles and intercalators. Conductance of the memory elements can be controlled by sequence, length, conformation, doping, and number of pathways between nanowires. A diode can also be connected in series with each of the memory elements. Linkers may also be redox or electroactive switching molecules or nanoparticles where the charge state changes the resistance of the memory element.

Combinations of resistive change elements and resistive change element arrays thereof are described. Combinational resistive change elements and combinational resistive change element arrays thereof are described. Devices and methods for programming and accessing combinations of resistive change elements are described. Devices and methods for programming and accessing combinational resistive change elements are described.