The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.

A 1T-1R memory cell includes a transistor structure where an ambipolar layer is disposed on an insulator layer formed on a substrate. The transistor further includes a gate dielectric layer that is disposed on the ambipolar layer and a gate electrode disposed on the gate dielectric layer. A source region and a drain region are disposed on the ambipolar layer. The source region is separated from the drain region by the gate electrode. A source contact is disposed on the source region and a drain contact disposed on the drain region. The 1T-1R cell further includes a memory device that is disposed above the drain contact of the transistor. The memory device belongs to a class of memory devices that is based on resistive switching.

The invention discloses a dopamine-based self-polymerization electric storage material and a preparation method thereof and the application thereof in an electric storage device, and the self-polymerization of dopamine is generated by solving the problems of complicated preparation process, poor environment and high temperature stability of the current organic electric storage material. The organic electric storage device prepared by the polymer into a sandwich structure successfully realizes the organic electric storage behavior. In the preparation process, the molecular synthesis and the device preparation are completed simultaneously, the device environment and the high temperature stability are good, and it is of great significance to the research progress of the organic electric storage technology and practical value.

An electronic switching element (1) which comprises, in this sequence, a first electrode (16), a molecular layer (18) bonded to a substrate, and a second electrode (20), where the molecular layer essentially consists of compounds of the formula I indicated in claim 1, in which a mesogenic radical is bonded to the substrate via a spacer group (Sp) by means of an anchor group (G), is suitable for the production of components (1) as memristive device for digital information storage.

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

The present invention provides an array substrate, a method for manufacturing the array substrate, and a display panel. The array substrate includes a driving transistor, and the driving transistor includes: a gate electrode; an active layer arranged opposite to a position of the gate electrode, the active layer includes a first semiconductor and second semiconductors, the second semiconductors are in contact with the first semiconductor to form a first PN junction and a second PN junction respectively, and the first PN junction corresponds to the source electrode; and a source drain layer, including a source electrode and a drain electrode. The second semiconductors are electrically connected with the source electrode and drain electrode, respectively.

Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

An organic molecular memory of embodiments includes: a first electrode; a second electrode; an organic molecular layer provided between the first electrode and the second electrode, extending in a first direction from the first electrode toward the second electrode, and containing a first molecule and a second molecule provided between the first molecule and the second electrode; and a third electrode facing the second molecule.