H10K30/10

Enhanced perovskite materials for photovoltaic devices

A perovskite material that has a perovskite crystal lattice having a formula of C.sub.xM.sub.yX.sub.z, where x, y, and z, are real numbers, and 1,4-diammonium butane cation cations disposed within or at a surface of the perovskite crystal lattice. C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine. M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr and combinations thereof. X comprises one or more anions each selected from the group consisting of halides, sulfides, selenides, and combinations thereof.

Enhanced Perovskite Materials for Photovoltaic Devices
20230162974 · 2023-05-25 ·

A perovskite material that has a perovskite crystal lattice having a formula of C.sub.xM.sub.yX.sub.z, and alkyl polyammonium cations disposed within or at a surface of the perovskite crystal lattice; wherein x, y, and z, are real numbers; C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine; M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr, and combinations thereof and X comprises one or more anions each selected from the group consisting of halides, pseudohalides, chalcogenides, and combinations thereof.

Enhanced Perovskite Materials for Photovoltaic Devices
20230162974 · 2023-05-25 ·

A perovskite material that has a perovskite crystal lattice having a formula of C.sub.xM.sub.yX.sub.z, and alkyl polyammonium cations disposed within or at a surface of the perovskite crystal lattice; wherein x, y, and z, are real numbers; C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine; M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr, and combinations thereof and X comprises one or more anions each selected from the group consisting of halides, pseudohalides, chalcogenides, and combinations thereof.

TANDEM SOLAR CELL
20230163228 · 2023-05-25 ·

The present invention relates to a tandem solar cell which comprises: a perovskite solar cell comprising a perovskite absorption layer; a silicon solar cell placed under the perovskite solar cell; a junction layer placed between the perovskite solar cell and the silicon solar cell; an upper electrode placed on the perovskite solar cell; and a lower electrode placed under the silicon solar cell.

HETEROJUNCTION OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
20230165018 · 2023-05-25 ·

The present disclosure relates to an optoelectronic device including a heterojunction of a halide perovskite single crystal and a two-dimensional semiconductor material layer and a method of manufacturing the same.

MODULE WITH SILICON LAYER AND PEROVSKITE LAYER AND METHODS FOR MAKING THE SAME

A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.

METHODS OF MAKING SEMICONTDUCTOR PEROVSKITE LAYERS AND COMPOSITIONS THEREOF

The present disclosure may provide semiconductor perovskite layers and method of making thereof. In some cases, the perovskite layer may comprise a composition of MA.sub.n1FA.sub.n2Cs.sub.n3PbX.sub.3. MA may be methylammonium, FA may be formamidinium, n1, n2, and n3 may independently be greater than 0 and less than 1, and n1 + n2 + n3 may equal 1.

METHODS OF MAKING SEMICONTDUCTOR PEROVSKITE LAYERS AND COMPOSITIONS THEREOF

The present disclosure may provide semiconductor perovskite layers and method of making thereof. In some cases, the perovskite layer may comprise a composition of MA.sub.n1FA.sub.n2Cs.sub.n3PbX.sub.3. MA may be methylammonium, FA may be formamidinium, n1, n2, and n3 may independently be greater than 0 and less than 1, and n1 + n2 + n3 may equal 1.

PV device having improved overall efficiency

A photovoltaic device having a perovskite PV cell wherein the PV device operates, for example during start-up, initially in a bias-voltage operating mode, in which a bias voltage is applied to the perovskite PV cell of the PV device. The bias voltage or the energy needed for same can advantageously be drawn from the power electronics associated with the perovskite PV cell.

Solar cell

Provided is a solar cell including a first electrode, a second electrode, a light-absorbing layer located between the first electrode and the second electrode, and an intermediate layer located between the light-absorbing layer and at least one electrode selected from the group consisting of the first electrode and the second electrode. The light-absorbing layer contains a perovskite compound represented by a chemical formula ASnX.sub.3 (where A is a monovalent cation and X is a halogen anion). The intermediate layer is in contact with the light-absorbing layer. The at least one electrode selected from the group consisting of the first electrode and the second electrode has light-transmissive property. The intermediate layer contains at least one selected from the group consisting of (4-(1′,5′-dihydro-1′-methyl-2′H-[5,6]fullereno-C60-Ih[1,9-c]pyrrol-2′-yl)benzoic acid) and fullerene C60.