A tandem cell is provided in the present disclosure, which relates to the technical field of photovoltaics, so as to form a functional layer with high film ordering on a bottom cell, thereby improving photoelectric conversion efficiency of the tandem cell. The tandem cell includes: a bottom cell with a textured surface; a hole transport layer formed on the textured surface of the bottom cell; a second ordered induction layer and a perovskite absorption layer formed on the hole transport layer, the second ordered induction layer being located between the hole transport layer and the perovskite absorption layer; and a transparent conductive layer formed on the perovskite absorption layer. An inducing material contained in the second ordered induction layer is organic ammonium salt or inorganic lead compound. The tandem cell according to the present disclosure is a tandem cell with a perovskite solar cell as a top cell.

A tandem cell is provided in the present disclosure, which relates to the technical field of photovoltaics, so as to form a functional layer with high film ordering on a bottom cell, thereby improving photoelectric conversion efficiency of the tandem cell. The tandem cell includes: a bottom cell with a textured surface; a hole transport layer formed on the textured surface of the bottom cell; a second ordered induction layer and a perovskite absorption layer formed on the hole transport layer, the second ordered induction layer being located between the hole transport layer and the perovskite absorption layer; and a transparent conductive layer formed on the perovskite absorption layer. An inducing material contained in the second ordered induction layer is organic ammonium salt or inorganic lead compound. The tandem cell according to the present disclosure is a tandem cell with a perovskite solar cell as a top cell.

There is provided a photovoltaic device that comprises a front electrode, a back electrode, and disposed between the front electrode and the back electrode, an electron transporter region comprising an electron transporter layer; a hole transporter region comprising a hole transporter layer, and a layer of perovskite semiconductor disposed between and in contact with the electron transporter layer and the hole transporter layer. The electron transporter region is nearest to the front electrode and the hole transporter region is nearest to the back electrode, and the electron transporter layer comprises any of a chalcogenide material and an organic material and has a thickness of at least 2 nm.

Disclosed herein is the formation of p-type transparent conducting oxides (TCO) having a structure of Mg.sub.xNi.sub.1-xO or Zn.sub.xNi.sub.1-xO. These structures disrupt the two-dimensional confinement of individual holes (the dominant charge carrier transport mechanism in pure NiO) creating three-dimensional hole transport by providing pathways for hole transfer in directions that are unfavorable in pure NiO. Forming these structures preserves NiO's transparency to visible light since the band gaps do not deviate significantly from that of pure NiO. Furthermore, forming Mg.sub.xNi.sub.1-xO or Zn.sub.xNi.sub.1-xO does not lead to hole trapping on O ions adjacent to Zn and Mg ions. The formation of these alloys will lead to creation of three-dimensional hole transport and improve NiO's conductivity for use as p-type TCO, without adversely affecting the favorable properties of pure NiO.

The organic small molecule 4,4′,4″,4′″-(5,5-dimethoxycyclopenta-1,3-diene-1,2,3,4-tetrayl)tetrakis(N,N-bis(4-methoxyhenyl)aniline (CPDA 1), shows electrochemical properties very close to spiro-OMeTAD indicating a high compatibility with PSC systems for its use as a hole transport material (HTM). The implementation of the cyclopentadiene dimethyl acetale core helps to red shift the absorption onset of the films as well as provide a flexible spatial configuration of the molecule, which is essential for optimum film forming properties. Transient and steady state emission analysis as well as hole mobility measurements indicate that the new HTM allows a better charge extraction, transport and separation than the spiro-OMeTAD reference compound. PSCs based on the new CPDA 1 show a PCE close to 23% with lower hysteresis than its analogue. Stability studies performed under ambient, heated and humid conditions all showed that CPDA 1 is over-performing spiro-OMeTAD. Furthermore the production cost of CPDA 1 is about 10 times lower than that of spiro-OMeTAD, contributing to render PSCs more affordable.

The organic small molecule 4,4′,4″,4′″-(5,5-dimethoxycyclopenta-1,3-diene-1,2,3,4-tetrayl)tetrakis(N,N-bis(4-methoxyhenyl)aniline (CPDA 1), shows electrochemical properties very close to spiro-OMeTAD indicating a high compatibility with PSC systems for its use as a hole transport material (HTM). The implementation of the cyclopentadiene dimethyl acetale core helps to red shift the absorption onset of the films as well as provide a flexible spatial configuration of the molecule, which is essential for optimum film forming properties. Transient and steady state emission analysis as well as hole mobility measurements indicate that the new HTM allows a better charge extraction, transport and separation than the spiro-OMeTAD reference compound. PSCs based on the new CPDA 1 show a PCE close to 23% with lower hysteresis than its analogue. Stability studies performed under ambient, heated and humid conditions all showed that CPDA 1 is over-performing spiro-OMeTAD. Furthermore the production cost of CPDA 1 is about 10 times lower than that of spiro-OMeTAD, contributing to render PSCs more affordable.

The present disclosure relates to the field of preparation of compound semiconductor nanomaterials, and in particular to a method for in-situ modification of mercury quantum dots in a traditional thermal injection process. It is characterized in that, in the traditional thermal injection process for synthesis of HgTe quantum dots, after a certain reaction time, a low boiling point polar solvent that is incompatible with a reaction solvent is rapidly injected, so that an interfacial separation of two liquid phases occurs in a mixed reaction, and then a selective crystal oriented surface modification is conducted on surfaces of mercury quantum dots.

The present disclosure relates to the field of preparation of compound semiconductor nanomaterials, and in particular to a method for in-situ modification of mercury quantum dots in a traditional thermal injection process. It is characterized in that, in the traditional thermal injection process for synthesis of HgTe quantum dots, after a certain reaction time, a low boiling point polar solvent that is incompatible with a reaction solvent is rapidly injected, so that an interfacial separation of two liquid phases occurs in a mixed reaction, and then a selective crystal oriented surface modification is conducted on surfaces of mercury quantum dots.

The present invention relates to a method for manufacturing a photovoltaic device comprising: —forming a porous first conducting layer on one side of a porous insulating substrate, —coating the first conducting layer with a layer of grains of a doped semiconducting material to form a structure, —performing a first heat treatment of the structure to bond the grains to the first conducting layer, —forming electrically insulating layers on surfaces of the first conducting layer, —forming a second conducting layer on an opposite side of the porous insulating substrate, —applying a charge conducting material onto the surfaces of the grains, inside pores of the first conducting layer, and inside pores of the insulating substrate, and—electrically connecting the charge conducting material to the second conducting layer.

A method including depositing a lead halide precursor ink onto a substrate; drying the lead halide precursor ink to form a first thin film; annealing the first thin film; and forming a perovskite material layer, wherein forming the perovskite material layer includes: depositing a benzylammonium halide precursor ink onto the first thin film; drying the benzylammonium halide precursor ink; depositing a formamidinium halide precursor ink onto the benzylammonium halide precursor ink; drying the formamidinium halide precursor ink to form a second thin film; and annealing the second thin film.