The disclosure provides a precursor solution, a perovskite solar cell and a preparation method thereof. The solute of the precursor solution includes a metal halide, the solvent of the precursor solution is an organic solvent, and the precursor solution contains nanobubbles, which have a diameter not more than 1000 nm, and the zeta potential of the precursor solution does not exceed −20 mV. The method of preparing the precursor solution includes: (1) preparing an organic solvent containing nanobubbles; (2) dissolving a solute in the organic solvent containing nanobubbles. The precursor solution of the disclosure has a very low zeta potential, and the nanobubbles can exist stably in the organic solvent(s) for up to one month. When comparing with traditional methods for preparing the precursor solution of the perovskite cells, the method for preparing the precursor solution of the disclosure can effectively improve the stability, reproducibility and solubility of the metal halide in the organic solvent(s).

An electronic device includes: a support; a charge-transporting layer including a charge-transporting material, or a sensitizing-dye electrode layer including a sensitizing dye, where the charge-transporting layer or the sensitizing-dye electrode layer is disposed on or above the support; and a metal oxide layer disposed on or above the charge-transporting layer or the sensitizing-dye electrode layer. The metal oxide layer includes p-type semiconductor metal oxide and silica or metal oxide particles, and an amount of the silica or metal oxide particles included in the metal oxide layer is 0.5% by mass or greater but 1.5% by mass or less, relative to the metal oxide layer.

Perovskite single crystal X-ray radiation detector devices including an X-ray wavelength-responsive active layer including an organolead trihalide perovskite single crystal, a substrate layer comprising an oxide, and a binding layer disposed between the active layer and the substrate layer. The binding layer including a binding molecule having a first functional group that bonds to the organolead trihalide perovskite single crystal and a second functional group that bonds with the oxide. Inclusion of the binding layer advantageously reduces device noise while retaining signal intensity.

In one aspect, window inserts are described herein, which can modulate transmission of electromagnetic radiation through a window and can be self-powered. In some embodiments, a window insert comprises a photovoltaic device, the photovoltaic device including a photosensitive layer having peak absorption between 250 nm and 450 nm and an average transmittance of at least 50 percent in the visible region of the electromagnetic spectrum.

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

A solid junction-type photoelectric conversion element (10) including a first conductive layer (2), an electric power generation layer (4), and a second conductive layer (6), which are laminated in this order, wherein the electric power generation layer (4) comprises: a perovskite compound represented by a composition formula ABX.sub.3, formed of an organic cation A, a metal cation B and a halide anion X, and a compound Z having no perovskite structure.

Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

The present invention is a structure of a photodiode, which comprises a substrate; a first electrode is arranged on the substrate; a first transport layer is arranged on the first electrode; a photoactive layer is arranged on the first transport layer, the photoactive layer includes a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer and the N-type semiconductor layer have a composition ratio between 1:0.5 and 1:1.5. The photoactive layer has a thickness ranging from 1 μm to 15 m, the photoactive layer has a first energy gap value, and a second electrode is disposed on the photoactive layer.

Provided are an inverted thick 2D hybrid perovskite solar cell insensitive to film thickness and a preparation method thereof, belonging to the field of organic-inorganic hybrid perovskite materials. The solar cell adopts a 2D hybrid perovskite thick-film material as a light absorption layer having thickness in a range of 500-800 nm, which is conducive to the full absorption of sunlight. The thick-film film material can be deposited from a precursor solution added with guanidine hydroiodide, and is composed of large grains growing along the thickness direction. The solar cell with an inverted structure prepared by using the thick-film material as a light absorption layer has an efficiency fluctuation less than 5% in a film thickness range of 500-800 nm. This is of great value for the preparation of high-performance hybrid perovskite solar cells by a large-area solution method.

An infrared absorption composition includes a p-type semiconductor compound including a first structural unit represented by Chemical Formula 1 and a second structural unit including an electron donating moiety; and an n-type semiconductor compound represented by Chemical Formula 2:

##STR00001## wherein, in Chemical Formula 1, Ar.sup.1, X, R.sup.1a, and R.sup.2a are the same as defined in the detailed description. In Chemical Formula 2, A.sup.1, A.sup.2, D.sup.1, D.sup.2, and D.sup.3 are the same as defined in the detailed description.