A method for manufacturing a photovoltaic device. The method comprises fabricating a first photovoltaic device portion with a first photoactive layer having a first face comprising a first perovskite precursor material; fabricating a second photovoltaic device portion with a second photoactive layer having a second face comprising a second perovskite material or a second perovskite precursor material; arranging the first photovoltaic device portion and the second photovoltaic device portion such that the first face is in contact with the second face; and compressing the first photovoltaic device portion and the second photovoltaic device portion at a pressure sufficient to fuse the first perovskite precursor material to the second perovskite material or the second perovskite precursor material.

An object of the present invention is to provide a photoelectric conversion element that exhibits excellent external quantum efficiency and responsiveness to light at all wavelengths in a red wavelength region, a green wavelength region, and a blue wavelength region. Another object of the present invention is to provide an imaging element, an optical sensor, and a compound related to the photoelectric conversion element.

The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).

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An object of the present invention is to provide a photoelectric conversion element that exhibits excellent external quantum efficiency and responsiveness to light at all wavelengths in a red wavelength region, a green wavelength region, and a blue wavelength region. Another object of the present invention is to provide an imaging element, an optical sensor, and a compound related to the photoelectric conversion element.

The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).

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A perovskite film, method of preparing thereof, and an optoelectronic device are provided. They are prepared by steps including preparing a mixture containing a first monomer and a second monomer which can be crosslinked in situ; performing an annealing process, and the first monomer and the second monomer are reacted in situ to form a first polymer which combines with the perovskite crystal grains formed by the perovskite precursor and is concentrated at a crystal grain boundary of the perovskite crystal grains to passivate the perovskite crystal grain defects, and then a perovskite film is formed by curing.

The present invention is to provide a photoelectric conversion element with an excellent sensitivity, an imaging element, an optical sensor, and a compound. The photoelectric conversion element of the present invention includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film in which the photoelectric conversion film contains a compound represented by Formula (1) and a coloring agent.

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In one aspect, window inserts are described herein, which can modulate transmission of electromagnetic radiation through a window and can be self-powered. In some embodiments, a window insert comprises a photovoltaic device, the photovoltaic device including a photosensitive layer having peak absorption between 250 nm and 450 nm and an average transmittance of at least 50 percent in the visible region of the electromagnetic spectrum.

Provided is a photodetector having a small dark current ratio. A photodetector includes a first electrode, a second electrode, and an active layer provided between the first electrode and the second electrode, the active layer contains a p-type semiconductor material and an n-type semiconductor material, the p-type semiconductor material contains a polymer having the highest occupied molecular orbital (HOMO) of −5.45 eV or less, and the n-type semiconductor material contains a non-fullerene compound. It is preferable that the polymer contained in the p-type semiconductor material contains a constitutional unit DU having an electron donating property and a constitutional unit AU having an electron accepting property, and the non-fullerene compound contains a moiety DP having an electron donating property and a moiety AP having an electron accepting property.

Provided is a photodetector having a small dark current ratio. A photodetector includes a first electrode, a second electrode, and an active layer provided between the first electrode and the second electrode, the active layer contains a p-type semiconductor material and an n-type semiconductor material, the p-type semiconductor material contains a polymer having the highest occupied molecular orbital (HOMO) of −5.45 eV or less, and the n-type semiconductor material contains a non-fullerene compound. It is preferable that the polymer contained in the p-type semiconductor material contains a constitutional unit DU having an electron donating property and a constitutional unit AU having an electron accepting property, and the non-fullerene compound contains a moiety DP having an electron donating property and a moiety AP having an electron accepting property.

A solar panel includes a substrate and a photoactive material. The photoactive material includes an ion and a counterion. An absolute magnitude of a binding energy between the ion and the counterion is less than or equal to about 6.5. A majority of available hydrogen sites on the counterion may be halogenated. A water contact angle of the photoactive material may be greater than or equal to about 65°. The solar panel may be a photovoltaic or a luminescent solar concentrator.

The present invention relates to a process for the production of a layered body (1), at least comprising the process steps: I) provision of a photoactive layer comprising a material having a perovskite type crystal structure; II) superimposing the photoactive layer at least partially with a coating composition A) comprising an electrically conductive polymer a) and an organic solvent b); III) at least partial removal of the organic solvent b) from the coating composition A) superimposed in process step II), thereby obtaining an electrically conductive layer superimposed on the photoactive layer. The present invention also relates to a layered body obtainable by this process, to dispersions, to an electronic device, to a process for the preparation of a photovoltaic device and to the photovoltaic device that is obtainable by this process.