Provided is a perovskite-based photovoltaic device including a layered scaffold material and at least one perovskite material interpenetrating the layered scaffold, wherein the at least one perovskite layer is removable and regenerable.

An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

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Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:

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In Chemical Formula 1, each substituent is the same as defined in the detailed description.

To improve specific detectivity. A photodetector element 10 includes: an anode 12; a cathode 16; and an active layer 14 provided between the anode and the cathode and containing a p-type semiconductor material and an n-type semiconductor material, wherein a value (ΔEA+ΔEB) of a sum of a value (ΔEA) obtained by subtracting an absolute value of an energy level of HOMO of the p-type semiconductor material from an absolute value of an energy level of HOMO of the n-type semiconductor material and a value (ΔEB) obtained by subtracting an absolute value of an energy level of LUMO of the p-type semiconductor material from an absolute value of an energy level of LUMO of the n-type semiconductor material is in a range of more than 0 and less than 0.88.

To improve specific detectivity. A photodetector element 10 includes: an anode 12; a cathode 16; and an active layer 14 provided between the anode and the cathode and containing a p-type semiconductor material and an n-type semiconductor material, wherein a value (ΔEA+ΔEB) of a sum of a value (ΔEA) obtained by subtracting an absolute value of an energy level of HOMO of the p-type semiconductor material from an absolute value of an energy level of HOMO of the n-type semiconductor material and a value (ΔEB) obtained by subtracting an absolute value of an energy level of LUMO of the p-type semiconductor material from an absolute value of an energy level of LUMO of the n-type semiconductor material is in a range of more than 0 and less than 0.88.

A photovoltaic device is provided. The photovoltaic device includes a metal salt layer disposed adjacent to a perovskite layer. The metal salt layer diffuses into the perovskite layer. Methods for fabricating the photovoltaic device are also provided.

The present application provides a method for preparing a perovskite film, and a related perovskite film, solar cell and solar cell device thereof. The preparation method may include the steps of (1) providing a target material comprising the following elements: lead, a halogen, and one or more alkali metals; (2) sputtering using the target material in step (1), where a process gas is a noble gas, optionally, argon, so as to obtain a film; (3) subjecting the film obtained in step (2) to a chemical bath treatment, wherein the chemical bath is a solution of AX, A is selected from one or more of formamidine or methylamine, and X is a halogen; and (4) sputtering on the film obtained in step (3) using a tin metal, where a process gas comprises a noble gas, optionally, a mixture of argon and a halogen gas, so as to obtain the perovskite film.

A method for producing an organic non-fullerene electron transport compound includes mixing naphthalene-1,4,5,8-tetracarboxylic dianhydride and an amine compound in dimethylformamide. The method also includes heating the mixture to a temperature greater than or equal to 70° and less than or equal to 160° C. for an amount of time greater than or equal to 1 hour and less than or equal to 24 hours. The method further includes isolating an organic non-fullerene electron transport compound reaction product.

Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.