The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Provided is a structure 1 including an infrared light photoelectric conversion element 300 including an infrared light photoelectric conversion layer including a photoelectric conversion material that has a maximum absorption wavelength in an infrared range and generates a charge depending on absorbed light in the infrared range; a visible light photoelectric conversion element 200 that absorbs a light beam having a wavelength in a visible range and generates a charge depending on absorbed light; and an optical filter 400 that blocks and transmits a light beam of a predetermined wavelength, in which the infrared light photoelectric conversion element 300, the visible light photoelectric conversion element 200, and the optical filter 400 are provided on the same optical path, and each of the infrared light photoelectric conversion element 300 and the visible light photoelectric conversion element 200 is provided on an emission side of light from the optical filter 400. Provided is further an optical sensor and an image display device, each of which including the structure 1.

Disclosed are a photoelectric conversion device and an organic sensor and an electronic device including the same. The photoelectric conversion device includes a first and a second electrode, a photoelectric conversion layer between the first and the second electrode and configured to absorb light in at least one portion of a wavelength spectrum and to convert the absorbed light into an electric signal, and a buffer layer between the second electrode and the photoelectric conversion layer and including a mixture of at least two materials. The mixture includes a first and a second material. The first material has an energy bandgap of at least about 3.2 eV and a HOMO energy level of at least about 6.0 eV. The second material has an energy bandgap of less than or equal to about 2.8 eV and a HOMO energy level of at least about 6.0 eV.

A doped organic semiconductor is produced using the method of providing an organic semiconductor solution, contacting the organic semiconductor solution with CO.sub.2; and irradiating the organic semiconductor solution with ultraviolet light. A composition is described, the composition comprising an organic semiconductor; and a metal salt having the formula M.sup.+X.sup.− wherein X.sup.− is a monoanionic species; and wherein the ratio of M.sup.+ to X.sup.− in the hole transport material is less than about 1.00. An additional composition is described, the composition comprising an organic semiconductor; a metal salt having the formula M.sup.+X.sup.− wherein X.sup.− is a monoanionic species; and a metal carbonate; wherein the total metal content of the composition is approximately equal to the X.sup.− content of the composition.

Compounds of formula (Ia) and/or formula (Ib),

##STR00001##

are disclosed wherein R1 and R3 are independently selected from the group consisting of H, halogen, alkyl, fluorinated or partly fluorinated alkyl, and heteroaryl, R2 is selected from the group consisting of halogen, fluorinated and partly fluorinated alkyl, R4 and R5 are independently selected from the group consisting of halogen, alkyl, fluorinated or partly fluorinated alkyl, alkenyl, alkinyl, alkoxy, aryl, and heteroaryl, Z is independently selected from the group consisting of CH.sub.2, CHR6 or CR7R8, with R6, R7 and R8 independently selected from the group consisting of H, halogen, alkyl, alkoxy, aryl, and heteroaryl, wherein n is independently 1, 2 or 3, U, V and W of formula (Ia) independently form an aryl ring or a heteroaryl ring, and T, U, V and W of formula (Ib) form an aryl ring or a heteroaryl ring.

A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.

A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.

A composition comprising

##STR00001##

In this composition Ar1 is independently selected from the group consisting of:

##STR00002##

and Ar2 is selected from

##STR00003##

Additionally in this composition, R.sub.1, R.sub.5, R.sub.6, R.sub.7, R.sub.8, R.sub.9, R.sub.11, and R.sub.12 are independently selected from F, Cl, H, unsubstituted or substituted branched alkyls with 1 to 60 carbon atoms, and unsubstituted or substituted linear alkyls with 1 to 60 carbon atoms; and the compositional ratio of x/y ranges from about 1/99 to about 99/1, and n ranges from 1 to 1,000,000.

A method of reacting

##STR00001##

with

##STR00002##

to produce

##STR00003##

In this method Y.sub.1 and Y.sub.2 are independently selected from the group consisting of: H, Cl, Br, I, and combinations thereof. Additionally in this method M is selected from the group consisting of H, trialkylstannane, boronate, or ZnX, wherein X is Cl, Br, or I. Furthermore in this method Z is a divalent linking group selected from the group consisting of:

##STR00004##

Lastly, in this method R.sub.1 is selected from: H, unsubstituted or substituted branched alkyls with 1 to 60 carbon atoms or unsubstituted or substituted linear alkyls with 1 to 60 carbon atoms.