An object of the present invention is to provide a photoelectric conversion element that includes a photoelectric conversion film excellent in the vapor deposition suitability, and that exhibits excellent external quantum efficiency to light at all wavelengths in a red wavelength range, a green wavelength range, and a blue wavelength range. Another object of the present invention is to provide an imaging element, an optical sensor, and a compound related to the photoelectric conversion element.

The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).

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A spirobifluorene compound and a perovskite solar cell including the spirobifluorene compound are disclosed. More particularly, a spirobifluorene compound which can be used as a hole transport material of a perovskite solar cell is disclosed. A perovskite solar cell including the spirobifluorene compound as a hole transport material is further disclosed.

The present disclosure relates to a ternary photoactive layer composition and an organic solar cell including the same. According to the present disclosure, excessive crystal growth and aggregation can be prevented during large-area coating of a photoactive layer, uniform morphology can be achieved without significant phase separation, an organic solar cell with superior photovoltaic cell characteristics can be realized, and superior performance may be maintained even after long-term exposure to heat by preventing the morphological change of the photoactive layer.

The present disclosure relates to a ternary photoactive layer composition and an organic solar cell including the same. According to the present disclosure, excessive crystal growth and aggregation can be prevented during large-area coating of a photoactive layer, uniform morphology can be achieved without significant phase separation, an organic solar cell with superior photovoltaic cell characteristics can be realized, and superior performance may be maintained even after long-term exposure to heat by preventing the morphological change of the photoactive layer.

A photoelectric device includes a first electrode, a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, and a charge transport layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer is configured to absorb light in a wavelength spectrum and converting the absorbed light into an electrical signal. The charge transport layer includes a first charge transport material and a second charge transport material which collectively define a heterojunction.

Fullerene derivative blends are described herein. The blends are useful in electronic applications such as, e.g., organic photovoltaic devices.

An infrared photodiode includes a first electrode including a reflective layer, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes an infrared absorbing material. A maximum absorption wavelength of the infrared absorbing material in a solution state is greater than about 700 nm and less than or equal to about 950 nm. The infrared photodiode is configured to exhibit an external quantum efficiency (EQE) spectrum in a wavelength region of greater than or equal to about 1000 nm.

An organic compound represented by the following general formula [1] is excellent in thermal stability. ##STR00001##
In the general formula [1], R.sub.1 to R.sub.12 are each independently selected from the group consisting of a hydrogen atom and a substituent. Symbol A is selected from the group consisting of a divalent residue of naphthalene, phenanthrene, fluorene, benzofluorene, dibenzofluorene or spirofluorene, and a heteroarylene group having 4 to 12 carbon atoms. Symbol B is selected from the group consisting of an arylene group having 6 to 25 carbon atoms and a heteroarylene group having 4 to 12 carbon atoms. Symbol n is an integer of 0 to 3.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.