H10K30/40

MULTILAYER JUNCTION PHOTOELECTRIC CONVERTER AND METHOD FOR MANUFACTURING MULTILAYER JUNCTION PHOTOELECTRIC CONVERTER

A multilayer junction photoelectric converter and a multilayer junction photoelectric converter manufacturing method capable of preventing water from contacting a perovskite layer are provided.

A multilayer junction photoelectric converter of an embodiment includes a multilayered-structure. In the multilayered-structure, a first electrode functional layer, a first photoactive layer, an intermediate functional layer, a second photoactive layer, and a second electrode functional layer are multilayered. The first photoactive layer is made of crystalline silicon. The second photoactive layer is made of a photoactive material having a perovskite crystal structure. A partial layer included in the second electrode functional layer is included in the multilayered-structure and extends on an edge surface of the multilayered-structure to cover an end portion of the second photoactive layer at the edge surface.

MULTILAYER JUNCTION PHOTOELECTRIC CONVERTER AND METHOD FOR MANUFACTURING MULTILAYER JUNCTION PHOTOELECTRIC CONVERTER

A multilayer junction photoelectric converter and a multilayer junction photoelectric converter manufacturing method capable of preventing water from contacting a perovskite layer are provided.

A multilayer junction photoelectric converter of an embodiment includes a multilayered-structure. In the multilayered-structure, a first electrode functional layer, a first photoactive layer, an intermediate functional layer, a second photoactive layer, and a second electrode functional layer are multilayered. The first photoactive layer is made of crystalline silicon. The second photoactive layer is made of a photoactive material having a perovskite crystal structure. A partial layer included in the second electrode functional layer is included in the multilayered-structure and extends on an edge surface of the multilayered-structure to cover an end portion of the second photoactive layer at the edge surface.

PEROVSKITE SOLAR BATTERY AND PHOTOVOLTAIC ASSEMBLY

A perovskite solar battery includes first and second electrodes, a light absorbing layer between the first and second electrodes, and first and second hole transport layers. The first hole transport layer is located between the second hole transport layer and the light absorbing layer. The second hole transport layer is located between the first electrode and the light absorbing layer or between the second electrode and the light absorbing layer. A first hole transport material of the first hole transport layer is one selected from PTAA, undoped nickel oxide, and nickel oxide doped with a doping element. A second hole transport material of the second hole transport layer includes at least one of a P-type transition metal oxide semiconductor material or a P-type transition metal halide semiconductor material that is capable of isolating water and oxygen.

PEROVSKITE SOLAR BATTERY AND PHOTOVOLTAIC ASSEMBLY

A perovskite solar battery includes first and second electrodes, a light absorbing layer between the first and second electrodes, and first and second hole transport layers. The first hole transport layer is located between the second hole transport layer and the light absorbing layer. The second hole transport layer is located between the first electrode and the light absorbing layer or between the second electrode and the light absorbing layer. A first hole transport material of the first hole transport layer is one selected from PTAA, undoped nickel oxide, and nickel oxide doped with a doping element. A second hole transport material of the second hole transport layer includes at least one of a P-type transition metal oxide semiconductor material or a P-type transition metal halide semiconductor material that is capable of isolating water and oxygen.

PEROVSKITE SOLAR CELL AND MANUFACTURING METHOD

The present disclosure provides a perovskite solar cell comprising at least an electrode, an electron transport layer, a hole transport layer, a perovskite layer and a passivation layer. In the perovskite solar cell, the passivation layer may contain a passivator, the passivatormay comprise an aza fused bicyclic compound and/or an organic salt formed from the aza fused bicyclic compound and an acid, each fused ring in the aza fused bicyclic compound may be independently a five-membered or six-membered saturated ring, unsaturated ring or aromatic ring, the fused ring of the aza fused bicyclic compound may contain 1-5 nitrogen atoms, and the fused ring may be an unsubstituted ring or a ring substituted with one or two substituents having 1-3 carbon atoms.

Organic pigment coating for electronic devices, perovskite solar cells, and methods

Methods of passivating a surface. The methods may include providing a mixture including a liquid and a derivative of quinacridone, applying the mixture to a first surface of a film that includes a metal halide perovskite, and annealing the film for a time and a temperature effective to convert the derivative of quinacridone to quinacridone. Composite materials and electronic devices also are provided.

METHODS FOR MANUFACTURING HIGHLY EFFICIENT WIDE-GAP PEROVSKITE SOLAR CELLS
20230284468 · 2023-09-07 ·

The present disclosure relates to a device that includes a layer that includes a perovskite, where the layer has a first side and a second side defining a thickness, the perovskite has a bulk composition as defined by AB(X.sub.1-yX.sub.y′).sub.3, where A includes a first cation, B includes a second cation, X includes iodide, and X′ includes bromide, y is between 0.2 and 0.8, inclusively, and the thickness has a bromide concentration gradient across the thickness with a maximum concentration at or in the proximity of the first side and a minimum concentration at the second side.

Three-tandem perovskite/silicon-based tandem solar cell

A three-tandem (3T) perovskite/silicon (PVT)-based tandem solar cell (TSC) includes an antireflection coating (ARC), a first transparent conductive oxide layer (TCO), a hole transport layer (HTL), a perovskite (PVT) layer, a second transparent conductive oxide layer (TCO), an electron transport layer (ETL), a plurality of buried contacts, a p-type Si layer, a p-type wafer-based homo-junction silicon solar cell, a n.sup.+ silicon layer, a back contact layer. The solar cell further includes a top sub-cell, a bottom sub-cell and a middle contact-based tandem. The top sub-cell includes the PVT layer. The bottom sub-cell includes the silicon solar cell. The middle contact-based tandem includes the second TCO layer to be used as the middle contact-based tandem, as well as a recombination layer for current collection. Further, a conduction and a valence band edge are employed at a front surface of the ETL.

Perovskite radiovoltaic-photovoltaic battery

A perovskite radiovoltaic-photovoltaic battery having a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode in sequence, wherein the first electrode is a transparent electrode, the first charge transport layer is an electron transport layer and the second charge transport layer is a hole transport layer, or the first charge transport layer is a hole transport layer and the second charge transport layer is an electron transport layer, and the second electrode is a radiating electrode formed by compounding an electrical conductor material with a radioactive source.

Perovskite radiovoltaic-photovoltaic battery

A perovskite radiovoltaic-photovoltaic battery having a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode in sequence, wherein the first electrode is a transparent electrode, the first charge transport layer is an electron transport layer and the second charge transport layer is a hole transport layer, or the first charge transport layer is a hole transport layer and the second charge transport layer is an electron transport layer, and the second electrode is a radiating electrode formed by compounding an electrical conductor material with a radioactive source.