An aspect of the present disclosure is a method that includes exchanging at least a portion of a first cation of a perovskite solid with a second cation, where the exchanging is performed by exposing the perovskite solid to a precursor of the second cation, such that the precursor of the second cation oxidizes to form the second cation and the first cation reduces to form a precursor of the first cation.

A Process for producing an inverted polymer photovoltaic cell (or solar cell) includes the following steps providing an electron contact layer (cathode); depositing a cathodic buffer layer onto said electron contact layer; depositing a photoactive layer comprising at least one photoactive organic polymer and at least one organic electron acceptor compound onto the cathodic buffer layer; depositing an anodic buffer layer onto the photoactive layer; and providing a hole contact layer (anode).

The step of depositing the cathodic buffer layer includes the steps of forming a layer onto the electron contact layer of a composition comprising having at least one zinc oxide and/or titanium dioxide or a precursor thereof, at least one organic solvent and at least one polymer soluble in the organic solvent; and plasma treating the layer formed onto the electron contact layer so as to form the cathodic buffer layer.

A method of forming a layer from ink on a substrate, includes the steps of: depositing an ink volume with a slot-die coating device; first drying; and second drying.

A display apparatus having a photosensing function is provided. The display apparatus includes a first pixel circuit and a second pixel circuit. The first pixel circuit includes a light-receiving device, a first transistor, and a second transistor. The second pixel circuit includes a light-emitting device. The light-receiving device includes a first pixel electrode, an active layer, and a common electrode. The light-emitting device includes a second pixel electrode, a light-emitting layer, and the common electrode. The active layer is positioned over the first pixel electrode and includes a first organic compound. The light-emitting layer is positioned over the second pixel electrode and includes a second organic compound different from the first organic compound. The common electrode includes a portion overlapping with the first pixel electrode with the active layer therebetween and a portion overlapping with the second pixel electrode with the light-emitting layer therebetween. The first transistor includes low-temperature polysilicon as a semiconductor layer and the second transistor includes a metal oxide as a semiconductor layer.

A solar cell includes a first electrode, a second electrode, a photoelectric conversion layer interposed between the first and second electrodes, and a hole transport layer interposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first and second electrodes is transparent to light. The photoelectric conversion layer includes a perovskite compound constituted by a monovalent cation, a divalent cation, and a halogen anion. The monovalent cation includes at least one selected from the group consisting of a formamidinium cation and a methylammonium cation. The divalent cation includes a Sn cation. The halogen anion includes an iodide ion. The hole transport layer includes 4,4′,4″-tris[9,9-dimethyl-2-fluorenyl(4-methoxy-phenyl)amino]triphenylamine.

A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.

The present disclosure relates to novel perovskite solar cells, and the method of making and using the novel perovskite solar cells. More specifically, a triple cation perovskite solar cell device containing a multifunctional capping layer (MCL) of R.sup.1NH.sub.3.sup.+ and/or a thin layer of two-dimensional (2D) material of (R.sup.1NH.sub.3.sup.+).sub.2(A.sup.+).sub.n−1(M.sup.2+).sub.n(X.sup.−).sub.3n+1 on top of the commonly used ABX3 perovskite, with enhanced power conversion efficiency of 22.06% (from 19.94%) with long-term stability over 1000 hours under continuous illumination has been developed.

Methods of passivating a surface. The methods may include providing a mixture including a liquid and a derivative of quinacridone, applying the mixture to a first surface of a film that includes a metal halide perovskite, and annealing the film for a time and a temperature effective to convert the derivative of quinacridone to quinacridone. Composite materials and electronic devices also are provided.

A composition for a photoelectric device includes a compound represented by Chemical Formula 1, and an image sensor and an electronic device including the same:

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In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Provided are a perovskite light emitting device containing an exciton buffer layer, and a method for manufacturing the same. A light emitting device of the present invention comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a light-emitting layer disposed on the exciton buffer layer and containing a perovskite light-emitter; and a second electrode disposed on the light-emitting layer. Accordingly, a perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle light-emitter. The present invention can also form a lamellar or layered structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton can be bound by the inorganic plane, thereby being capable of expressing high color purity.