A hole transporting material comprises a conductive polymer coil, and a plurality of transition metal oxide particles, which suspended and dispersed in the conductive polymer coil. Wherein the transition metal oxide particles are formed in the conductive polymer coil by a sol-gel reaction. The invention also disclosed a method of manufacturing a hole transporting material and an organic photodiode. The hole transporting material of the present invention can has a good match with an electron donor material of an active layer, so that the organic photodiode including the hole transporting material said above can have better power conversion efficiency.

The present disclosure relates to a device that includes an irregular network of interconnected ridges in physical contact with a planar substrate and a perovskite layer, where the planar substrate include a support layer and a first charge selective contact layer, the first charge selective contact layer is positioned between the support layer and the interconnected ridges, each ridge includes a second charge selective contact layer and an insulating layer, the insulating layer is positioned between the first charge selective contact layer and the second charge selective contact layer, and the perovskite layer substantially covers the plurality of interconnected ridges and the underlying planar substrate.

The present disclosure relates to a device that includes an irregular network of interconnected ridges in physical contact with a planar substrate and a perovskite layer, where the planar substrate include a support layer and a first charge selective contact layer, the first charge selective contact layer is positioned between the support layer and the interconnected ridges, each ridge includes a second charge selective contact layer and an insulating layer, the insulating layer is positioned between the first charge selective contact layer and the second charge selective contact layer, and the perovskite layer substantially covers the plurality of interconnected ridges and the underlying planar substrate.

Methods and systems for fabricating photovoltaic devices are provided. A method includes forming a photovoltaic device comprising an active layer with one or more interfacial layers adjacent the active layer, wherein the active layer comprises a photovoltaic material and the one or more interfacial layers comprise a material configured to collect charge carriers generated in the photovoltaic material; applying pressure onto the photovoltaic device to increase an amount of electrical contact between the active layer and the one or more interfacial layer; and annealing the photovoltaic device.

Methods and systems for fabricating photovoltaic devices are provided. A method includes forming a photovoltaic device comprising an active layer with one or more interfacial layers adjacent the active layer, wherein the active layer comprises a photovoltaic material and the one or more interfacial layers comprise a material configured to collect charge carriers generated in the photovoltaic material; applying pressure onto the photovoltaic device to increase an amount of electrical contact between the active layer and the one or more interfacial layer; and annealing the photovoltaic device.

A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber.

##STR00001##

In Chemical Formula 1, Ar.sup.1, Ar.sup.2, X.sup.1, L.sup.1, L.sup.2, R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are the same as defined in the detailed description.

An organic electronic component is disclosed. In an embodiment an organic electronic component includes at least one organic layer having a fluorinated sulfonimide metal salt of the following formula: ##STR00001## wherein M is either a divalent or higher-valent metal having an atomic mass of greater than 26 g/mol or a monovalent metal having an atomic mass of greater than or equal to 39 g/mol, where 1n7, and wherein R.sub.1, R.sub.2 are selected independently of one another from the group consisting of a fluorine-substituted aryl radical, a fluorine-substituted alkyl radical and a fluorine-substituted arylalkyl radical.

The present application provides a method for preparing a perovskite film, and a related perovskite film, solar cell and solar cell device thereof. The preparation method may include the steps of (1) providing a target material comprising the following elements: lead, a halogen, and one or more alkali metals; (2) sputtering using the target material in step (1), where a process gas is a noble gas, optionally, argon, so as to obtain a film; (3) subjecting the film obtained in step (2) to a chemical bath treatment, wherein the chemical bath is a solution of AX, A is selected from one or more of formamidine or methylamine, and X is a halogen; and (4) sputtering on the film obtained in step (3) using a tin metal, where a process gas comprises a noble gas, optionally, a mixture of argon and a halogen gas, so as to obtain the perovskite film.

The present application provides a method for preparing a perovskite film, and a related perovskite film, solar cell and solar cell device thereof. The preparation method may include the steps of (1) providing a target material comprising the following elements: lead, a halogen, and one or more alkali metals; (2) sputtering using the target material in step (1), where a process gas is a noble gas, optionally, argon, so as to obtain a film; (3) subjecting the film obtained in step (2) to a chemical bath treatment, wherein the chemical bath is a solution of AX, A is selected from one or more of formamidine or methylamine, and X is a halogen; and (4) sputtering on the film obtained in step (3) using a tin metal, where a process gas comprises a noble gas, optionally, a mixture of argon and a halogen gas, so as to obtain the perovskite film.

Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell comprising a P- or N-type material/perovskite composite layer including: A/a silicon-based sub-cell A; and B/a perovskite-based sub-cell B, comprising at least: a conductive or semiconductor layer of the N type in the case of a NIP structure, or of the P type in the case of a PIN structure, anda composite layer, superimposed over the lower conductive or semiconductor layer, comprising at least one perovskite material and at least one material of the P type in the case of a NIP structure or of the N type material in the case of a PIN structure