Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell comprising a P- or N-type material/perovskite composite layer including: A/a silicon-based sub-cell A; and B/a perovskite-based sub-cell B, comprising at least: a conductive or semiconductor layer of the N type in the case of a NIP structure, or of the P type in the case of a PIN structure, anda composite layer, superimposed over the lower conductive or semiconductor layer, comprising at least one perovskite material and at least one material of the P type in the case of a NIP structure or of the N type material in the case of a PIN structure

A PIN type infrared photodiode including a first electrode, a n-type semiconductor, an atomic layer deposition coating of lead sulfide, a p-type semiconductor and a second electrode, wherein the n-type semiconductor comprises nanowires conformally coated with the atomic layer deposition coating of lead sulfide.

The present disclosure provides a photosensitive device. The photosensitive device includes a donor-intermix-acceptor (PIN) structure. The PIN structure includes an organic hole transport layer; an organic electron transport layer; and an intermix layer sandwiched between the hole transport organic material layer and the electron transport organic material layer. The intermix layer includes a mixture of an n-type organic material and a p-type organic material.

A photoelectric conversion material includes a compound represented by Formula (1):

##STR00001##

where, X is selected from the group consisting of a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, and a cyano group; and Y represents a monovalent substituent represented by Formula (2):

##STR00002##

where, R.sub.1 to R.sub.10 each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; or two or more of R.sub.1 to R.sub.10 bond to each other to form one or more rings, and the remainders each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; * denotes the binding site of Y in Formula (1); and Ar.sub.1 is selected from the group consisting of structures represented by Formulae (3):

##STR00003##

where ** denotes a binding site of Ar.sub.1 with N in Formula (2).

The disclosed technology includes systems, devices, and methods associate with producing an organic semiconductor film having electrical dopant molecules distributed to a controlled depth. In an example implementation, a semiconductor device is provided. The semiconductor device can include a first substrate and an organic semiconductor film disposed on the first substrate. The organic semiconductor film includes a first region characterized by electrical dopant molecules distributed to a controlled depth with respect to a first surface of the organic semiconductor film. The semiconductor device further can include an electrode in contact with at least a portion of the first region of the organic semiconductor film.

Embodiments described herein generally relate to monodisperse nanoparticles that are capable of absorbing infrared radiation and generating charge carriers. In some cases, at least a portion of the nanoparticles are nanocrystals. In certain embodiments, the monodisperse, IR-absorbing nanocrystals are formed according to a method comprising a nanocrystal formation step comprising adding a first precursor solution comprising a first element of the nanocrystal to a second precursor solution comprising a second element of the nanocrystal to form a first mixed precursor solution, where the molar ratio of the first element to the second element in the first mixed precursor solution is above a nucleation threshold. The method may further comprise a nanocrystal growth step comprising adding the first precursor solution to the first mixed precursor solution to form a second mixed precursor solution, where the molar ratio of the first element to the second element in the second mixed precursor solution is below the nucleation threshold.

Organic or hybrid electronic device, having an NIP structure, such as an organic light-emitting diode, an organic photodetector, or an organic photovoltaic cell, comprising successively: a transparent substrate, a first transparent and electrically conducting electrode, an N type layer, an active layer comprising a polyethylenimine and: an electron donor material and an electron acceptor material, or a perovskite material, a P type layer, and a second electrode.

The present disclosure relates to a method for manufacturing a monolithic tandem solar cell in which a perovskite solar cell is laminated and bonded on a silicon solar cell. According to the present disclosure, a first microporous precursor thin film is formed through a sputtering method on a substrate having an unevenly structured texture and then a halide thin film is formed on the first microporous precursor thin film to form a perovskite absorption layer, whereby light reflectance can be reduced and a path of light can be increased, and accordingly a light absorption rate can be increased.

Organic photoelectric conversion element has a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a first organic layer that contains a first organic semiconductor containing principally a p-type organic semiconductor, a second organic layer that contains a second organic semiconductor containing principally an n-type organic semiconductor, and an intermediate layer that contains the first organic semiconductor and the second organic semiconductor. The second organic layer is disposed at a side of the second electrode relative to the first organic layer. The intermediate layer is between the first organic layer and the second organic layer and reaches each of these layers. The thickness of the second organic layer is greater than the sum of the thicknesses of the first organic layer and intermediate layer.

Provided are a perovskite optoelectronic device containing an exciton buffer layer, and a method for manufacturing the same. The optoelectronic device of the present invention comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a photoactive layer disposed on the exciton buffer layer and containing a perovskite photoactive layer; and a second electrode disposed on the photoactive layer. Accordingly, a perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle photoactive layer. The present invention can also form a lamellar or layered structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton can be bound by the inorganic plane, thereby being capable of expressing high color purity.