The present inventive concept relates to a method of manufacturing a thin film of a perovskite compound, including a process of reacting at least one compound selected from among an amine-based compound and an amidine-based compound, an organic metal compound including a divalent positive ion, and at least one hydrogen halide, and a method of manufacturing a solar cell using the same, and

According to the present inventive concept, because a perovskite compound is manufactured by performing a reaction through a chemical vapor deposition (CVD) process and an atomic layer deposition (ALD) process, step coverage may be enhanced, and thus, it may be possible to form a thin film having a uniform thickness and a problem where a solvent remains may also be solved.

A method for manufacturing a photovoltaic device. The method comprises fabricating a first photovoltaic device portion with a first photoactive layer having a first face comprising a first perovskite precursor material; fabricating a second photovoltaic device portion with a second photoactive layer having a second face comprising a second perovskite material or a second perovskite precursor material; arranging the first photovoltaic device portion and the second photovoltaic device portion such that the first face is in contact with the second face; and compressing the first photovoltaic device portion and the second photovoltaic device portion at a pressure sufficient to fuse the first perovskite precursor material to the second perovskite material or the second perovskite precursor material.

A tandem photovoltaic device includes: a tunnel junction between an upper cell unit and a lower cell unit. The lower cell unit is a crystalline silicon cell. The tunnel junction includes: a carrier transport layer, a crystalline silicon layer, and an intermediate layer located between the carrier transport layer and the crystalline silicon layer. The carrier transport layer is a metal oxide layer. The intermediate layer includes a tunneling layer. The crystalline silicon layer has a doping concentration greater than or equal to 10.sup.17 cm.sup.−3. The carrier transport layer is in direct contact with a shadow surface of the upper cell unit. If the crystalline silicon layer is a p-type crystalline silicon layer, a first energy level is close to a second energy level. If the crystalline silicon layer is an n-type crystalline silicon layer, a third energy level is close to a fourth energy level.

A light receiving element includes a first electrode, a hole transport region disposed on the first electrode, a light receiving layer disposed on the hole transport region and converting incident light to an electrical signal, an electron transport region disposed on the light receiving layer, and a second electrode disposed on the electron transport region. The light receiving layer includes a p-dopant compound, a donor compound, and an acceptor compound.

A method of manufacturing of an ink (100) composition comprises a biphasic ligand exchange process. A first phase liquid (10) comprising a nonpolar solvent (11) with a colloidal suspension of nanoparticles (1) that are capped with a shell of non polar ligands (2) is contacted with a second phase liquid (20) comprising a polar solvent (21) with second ligand (3). The second ligand comprises at least one surface binding head group that has an affinity for binding to the nanoparticle; and an ionically charged tail group. The second ligands displace the first ligands to form a dispersion of the nanoparticles that are capped with a shell of the second ligands in the second phase liquid. The nanoparticles can be separated from the second phase liquid. The separated nanoparticles can be (re)dispersed in a printable liquid medium, e.g. used for printing a photoactive layer.

A method of manufacturing of an ink (100) composition comprises a biphasic ligand exchange process. A first phase liquid (10) comprising a nonpolar solvent (11) with a colloidal suspension of nanoparticles (1) that are capped with a shell of non polar ligands (2) is contacted with a second phase liquid (20) comprising a polar solvent (21) with second ligand (3). The second ligand comprises at least one surface binding head group that has an affinity for binding to the nanoparticle; and an ionically charged tail group. The second ligands displace the first ligands to form a dispersion of the nanoparticles that are capped with a shell of the second ligands in the second phase liquid. The nanoparticles can be separated from the second phase liquid. The separated nanoparticles can be (re)dispersed in a printable liquid medium, e.g. used for printing a photoactive layer.

Disclosed are a composition for forming a hole transport layer of a light-transmitting solar cell, a method for manufacturing the light-transmitting solar cell, and a light-transmitting solar cell manufactured thereby. The light-transmitting solar cell manufactured with the composition for forming the hole transport layer may have excellent durability and therefore, not only deposit a transparent electrode, which is an upper electrode, without damage even without buffer layer, thereby reducing the process cost but also deposit the transparent electrode without damage by using a general sputter equipment even without using an expensive special sputter equipment.

Disclosed are a composition for forming a hole transport layer of a light-transmitting solar cell, a method for manufacturing the light-transmitting solar cell, and a light-transmitting solar cell manufactured thereby. The light-transmitting solar cell manufactured with the composition for forming the hole transport layer may have excellent durability and therefore, not only deposit a transparent electrode, which is an upper electrode, without damage even without buffer layer, thereby reducing the process cost but also deposit the transparent electrode without damage by using a general sputter equipment even without using an expensive special sputter equipment.

A method for forming an intermediate structure in the formation of an optoelectronic device in provided. The method includes: a) obtaining a stack of layers over a substrate holder in a sputtering chamber, the stack of layers comprising an active layer comprising an active material having a perovskite crystal structure, an n-type semiconducting layer comprising a fullerene over the active layer, and an energy alignment layer comprising a lithium halide, a magnesium halide Al.sub.2O.sub.3 or a metal fluoride on, and in contact with, the n-type semiconducting layer, wherein the energy alignment layer comprises an exposed top surface, and b) sputtering an n-type semiconducting metal oxide layer on the exposed top surface of the energy alignment layer, wherein said sputtering is performed at a sputtering power density of at most 1 W.Math.cm.sup.-2 and at a temperature of the stack of layers of at most 100° C.

A method for forming an intermediate structure in the formation of an optoelectronic device in provided. The method includes: a) obtaining a stack of layers over a substrate holder in a sputtering chamber, the stack of layers comprising an active layer comprising an active material having a perovskite crystal structure, an n-type semiconducting layer comprising a fullerene over the active layer, and an energy alignment layer comprising a lithium halide, a magnesium halide Al.sub.2O.sub.3 or a metal fluoride on, and in contact with, the n-type semiconducting layer, wherein the energy alignment layer comprises an exposed top surface, and b) sputtering an n-type semiconducting metal oxide layer on the exposed top surface of the energy alignment layer, wherein said sputtering is performed at a sputtering power density of at most 1 W.Math.cm.sup.-2 and at a temperature of the stack of layers of at most 100° C.