According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, and a photoelectric conversion layer located between the first conductive layer and the second conductive layer. The photoelectric conversion layer includes a perovskite compound and a first compound. The first compound includes at least one selected from the group consisting of a pyrrolidone derivative, a urea derivative, an imidazole derivative, a pyridine derivative, and a diamine derivative.

The present invention aims to provide a solar cell having high photoelectric conversion efficiency that is less likely to decrease even under prolonged application of a voltage. Provided is a solar cell including a cathode, a photoelectric conversion layer, a diffusion prevention layer, and an anode in the stated order, the cathode being a transparent electrode, the anode containing at least one selected from the group consisting of aluminum, copper, antimony, and molybdenum, the photoelectric conversion layer containing an organic-inorganic perovskite compound represented by the formula AMX wherein A represents an organic base compound and/or an alkali metal, M represents a lead or tin atom, and X represents a halogen atom, the diffusion prevention layer being a diffusion prevention layer that contains molybdenum, tungsten, tantalum, niobium, zirconium, hafnium, or an alloy of two or more thereof and has a thickness of 5 to 30 nm, a diffusion prevention layer that contains an oxide containing titanium, gallium, zinc, tin, indium, antimony, molybdenum, tungsten, vanadium, chromium, nickel, or lead, a diffusion prevention layer that contains a nitride containing titanium, vanadium, chromium, niobium, tantalum, molybdenum, zirconium, or hafnium and has a thickness of 5 to 50 nm, or a diffusion prevention layer that contains graphite and has a thickness of 2 nm to 50 nm.

According to one embodiment, a radiation detector includes a first layer, a first conductive layer, a second conductive layer, and an organic semiconductor layer. The first layer includes a first organic substance. The first layer emits light based on beta rays incident on the first layer. A period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns. The second conductive layer is located between the first layer and the first conductive layer. The organic semiconductor layer is located between the first conductive layer and the second conductive layer.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode. The organic photoelectric conversion layer has a domain of one organic semiconductor material therein. The domain of the one organic semiconductor material has a percolation structure in which the domain vertically extends in the organic photoelectric conversion layer in a film-thickness direction, and has a smaller domain length in a plane direction of the organic photoelectric conversion layer than a domain length in the film-thickness direction of the organic photoelectric conversion layer.

Provided is a photosensitive material and a photodetector including the same. According to the present invention, the photodetector may include a photoactive layer having a photocurrent density of at most about 10.sup.−6 A/cm.sup.2 under a first incidence condition, and having a photocurrent density of at least about 10.sup.−4 A/cm.sup.2 under a second incidence condition. The wavelength of light under the second incidence condition is the same as the wavelength of light under the first incidence condition, and the intensity of light under the second incidence condition may be greater than the intensity of light under the first incidence condition.

The present disclosure relates to a light detection device including: a substrate 100; a lower electrode 200 formed on the substrate; an organic semiconductor layer 300 formed on the lower electrode 200; and an upper electrode 400 formed on the organic semiconductor layer 300, wherein a Schottky contact is formed at least one of a junction between the organic semiconductor layer and the lower electrode or a junction between the organic semiconductor layer and the upper electrode.

A process for the preparation of a disubstituted diaryloxybenzoheterodiazole compound having general formula (XII): ##STR00001## wherein: Z represents a sulfur atom, an oxygen atom, a selenium atom; or a group NR.sub.6 wherein R.sub.6 is selected from linear or branched C.sub.1-C.sub.20 alkyl groups, or from optionally substituted aryl groups; R.sub.2 and R.sub.3, identical or different, represent a hydrogen atom, provided that R.sub.1 does not represent a hydrogen atom; or R.sub.1, R.sub.2 and R.sub.3 are selected from linear or branched C.sub.1-C.sub.20 alkyl groups optionally containing heteroatoms, optionally substituted cycloalkyl groups, optionally substituted aryl groups, optionally substituted, linear or branched C.sub.1-C.sub.20 alkoxy groups, optionally substituted phenoxy groups, or a cyano group; or R.sub.1 and R.sub.2, may optionally be bound together so as to form, together with carbon atoms to which R.sub.1 and R.sub.2 are bound, a saturated, unsaturated, or aromatic, cyclic or a polycyclic system containing from 3 to 14 carbon atoms, optionally containing one or more heteroatoms selected from oxygen, sulfur, nitrogen, silicon, phosphorus, or selenium; or R.sub.2 and R.sub.3 may optionally be bound together so as to form, together with carbon atoms to which R.sub.2 and R.sub.3 are bound, a saturated, unsaturated, or aromatic, cyclic or a polycyclic system containing from 3 to 14 carbon atoms, saturated, unsaturated, or aromatic, optionally containing one or more heteroatoms selected from oxygen, sulfur, nitrogen, silicon, phosphorus, or selenium; wherein R.sub.a and R.sub.b, which are different, represent a hydrogen atom; or are selected from linear or branched C.sub.1-C.sub.20 alkyl groups optionally containing heteroatoms, optionally substituted cycloalkyl groups, optionally substituted aryl groups, optionally substituted linear or branched C.sub.1-C.sub.20 alkoxy groups, optionally substituted phenoxy groups, —COOR.sub.c groups wherein R.sub.c is selected from linear or branched C.sub.1-C.sub.20 alkyl groups, —CON(R.sub.c).sub.2, wherein R.sub.c has the same meanings described above, or —N(R.sub.c).sub.2 groups wherein R.sub.c has the same meanings described above.

The present disclosure relates to a light detection device including: a substrate 100; a lower electrode 200 formed on the substrate; an organic semiconductor layer 300 formed on the lower electrode 200; and an upper electrode 400 formed on the organic semiconductor layer 300, wherein a Schottky contact is formed at least one of a junction between the organic semiconductor layer and the lower electrode or a junction between the organic semiconductor layer and the upper electrode.

A photovoltaic device having a perovskite PV cell wherein the PV device operates, for example during start-up, initially in a bias-voltage operating mode, in which a bias voltage is applied to the perovskite PV cell of the PV device. The bias voltage or the energy needed for same can advantageously be drawn from the power electronics associated with the perovskite PV cell.

A solar cell module comprises cell groups each containing solar cells, and each solar cell includes photoelectric converters, N number of which being connected in series, and first, second and third terminals. When the first terminal on one end of a first cell group has a reference potential, the second terminal on the other end of the mth cell group is connected to the first terminal on one end of another cell group, and N number of the third terminals of the mth cell group are respectively connected to N number of the first terminals of an m+1th cell group. The difference in potential between the second terminal on the other end of the mth cell group and the first terminal on one end of the other cell group is 10% or less of the difference in potential between the second and first terminals of the mth cell group.