A photoelectric conversion element includes a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode in this order, wherein the photoelectric conversion layer includes quantum dots and a first organic compound, the first organic compound satisfies Formula (1), an electron affinity of a material used for the first interfacial layer, an electron affinity of the quantum dots, and an electron affinity of the first organic compound satisfy Formulas (2) and (3):

E2>E1  (1)

E1 [eV]: energy at short-wavelength end of optical wavelength region detected by the photoelectric conversion element

E2 [eV]: band gap of the first organic compound

E3<E4−0.2  (2)

E4−0.4<E5<E4  (3)

E3 [eV]: electron affinity of material used for the first interfacial layer

E4 [eV]: electron affinity of the quantum dots

E5 [eV]: electron affinity of the first organic compound.

Provided herein are small molecular acceptor compounds containing thiophene end groups, methods for their preparation and intermediates used therein, the use of formulations containing the same as semiconductors in organic electronic devices, especially in organic photovoltaic and organic field-effect transistor devices, and to organic electronic and organic photovoltaic devices made from these formulations.

A flexible infrared irradiation and temperature sensor is provided. The sensor includes a substantially cubic deformable rubber substrate and a conductive layer embedded in the rubber substrate, wherein the conductive layer comprises a middle portion comprising a composite film of carbon nanotubes (CNTs) and nickel phthalocyanine (NiPc); and one or more exterior portions comprising carbon nanotubes, wherein the one or more exterior portions do not include NiPc.

The large-scale artificial synaptic device arrays based on the organic molecule-nanowire heterojunctions with tunable photoconductivity are proposed and demonstrated. The organic thin films of p-type 2,7-dioctyl[1]benzothieno[3,2-b][1] benzothiophene (C8-BTBT) or n-type phenyl-C61-butyric acid methyl ester (PC61BM) are used to wrap the InGaAs nanowire parallel arrays to configure two different type-I heterojunctions, respectively. Due to the difference in carrier injection, persistent negative photoconductivity (NPC) or positive photoconductivity (PPC) are achieved in these heterojunctions. The irradiation with different wavelengths (solar-blind to visible ranges) can stimulate the heterojunction devices, effectively mimicking the synaptic behaviors with two different photoconductivities. Evidently, these photosynaptic devices are illustrated with retina-like behaviors and capabilities for large-area integration, which reveals their promising potential for artificial visual systems.

The large-scale artificial synaptic device arrays based on the organic molecule-nanowire heterojunctions with tunable photoconductivity are proposed and demonstrated. The organic thin films of p-type 2,7-dioctyl[1]benzothieno[3,2-b][1] benzothiophene (C8-BTBT) or n-type phenyl-C61-butyric acid methyl ester (PC61BM) are used to wrap the InGaAs nanowire parallel arrays to configure two different type-I heterojunctions, respectively. Due to the difference in carrier injection, persistent negative photoconductivity (NPC) or positive photoconductivity (PPC) are achieved in these heterojunctions. The irradiation with different wavelengths (solar-blind to visible ranges) can stimulate the heterojunction devices, effectively mimicking the synaptic behaviors with two different photoconductivities. Evidently, these photosynaptic devices are illustrated with retina-like behaviors and capabilities for large-area integration, which reveals their promising potential for artificial visual systems.

A photo-capacitance sensor includes an input surface and one or more light sources arranged to illuminate a portion of the input surface. The photo-capacitance sensor also includes an array of photo-capacitors arranged to receive light from the one or more light sources which is reflected from an object in contact with, or proximate to, the illuminated portion of the input surface. The array of photo-capacitors is configured for detecting a reflective pattern of the object.

A particle sensing device is provided. The particle sensing device may include a light emitter configured to emit and output light into a light scattering space, and a light receiver provided in a maximum light scattering angle region. A maximum intensity of scattered light formed when the light emitted from the light emitter is scattered by a particle in the light scattering space may be obtained in the maximum light scattering angle region, and the light receiver may be configured to receive the scattered light incident thereon and generate a photocurrent signal.

Embodiments described herein generally relate to monodisperse nanoparticles that are capable of absorbing infrared radiation and generating charge carriers. In some cases, at least a portion of the nanoparticles are nanocrystals. In certain embodiments, the monodisperse, IR-absorbing nanocrystals are formed according to a method comprising a nanocrystal formation step comprising adding a first precursor solution comprising a first element of the nanocrystal to a second precursor solution comprising a second element of the nanocrystal to form a first mixed precursor solution, where the molar ratio of the first element to the second element in the first mixed precursor solution is above a nucleation threshold. The method may further comprise a nanocrystal growth step comprising adding the first precursor solution to the first mixed precursor solution to form a second mixed precursor solution, where the molar ratio of the first element to the second element in the second mixed precursor solution is below the nucleation threshold

A first semiconductor element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed the first electrode; and an organic semiconductor layer that is provided between the first electrode and the second electrode, and including an organic semiconductor material, the organic semiconductor material having a crystal density of greater than 1.26 g/cm.sup.3 and less than 1.50 g/cm.sup.3 in powder form by X-ray structure analysis, and a molecular weight of 1200 or less, and being available for vacuum deposition film formation.

A first semiconductor element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed the first electrode; and an organic semiconductor layer that is provided between the first electrode and the second electrode, and including an organic semiconductor material, the organic semiconductor material having a crystal density of greater than 1.26 g/cm.sup.3 and less than 1.50 g/cm.sup.3 in powder form by X-ray structure analysis, and a molecular weight of 1200 or less, and being available for vacuum deposition film formation.