Proposed is an X-ray detector including first and second electrodes on a substrate, and a photoconductor layer provided between the first electrode and the second electrode and configured to contain perovskite, wherein the photoconductor layer may include a first photoconductive layer made of a first perovskite with a columnar crystal structure, and a second photoconductive layer provided on the first photoconductive layer, and made of a second perovskite with a cubic crystal structure.

Proposed is an X-ray detector including first and second electrodes on a substrate, and a photoconductor layer provided between the first electrode and the second electrode and configured to contain perovskite, wherein the photoconductor layer may include a first photoconductive layer made of a first perovskite with a columnar crystal structure, and a second photoconductive layer provided on the first photoconductive layer, and made of a second perovskite with a cubic crystal structure.

A first photoelectric conversion element according to one embodiment of the present disclosure includes: a first electrode and a second electrode that are disposed side by side; a third electrode disposed to oppose the first electrode and the second electrode; a photoelectric conversion layer provided between the first electrode and the second electrode and the third electrode; an oxide semiconductor layer provided between the first electrode and the second electrode and the photoelectric conversion layer; and a protective layer provided between the photoelectric conversion layer and the oxide semiconductor layer. The protective layer includes a first layer and a second layer that include oxygen (O), an element X, and an element Y as a common element. The first layer and the second layer are stacked in this order from a side of the oxide semiconductor layer. The first layer and the second layer satisfy R.sub.x1>R.sub.x20 and 0R.sub.y1<R.sub.y2 in a case where a composition ratio of the element X and the element Y is defined as number of atoms of each of the element X and the element Y divided by total number of atoms of the element X and the element Y, and where the composition ratio of the element X included in the first layer is referred to as R.sub.x1, the composition ratio of the element Y included in the first layer is referred to as R.sub.y1, the composition ratio of the element X included in the second layer is referred to as R.sub.x2, and the composition ratio of the element Y included in the second layer is referred to as R.sub.y2.

A first photoelectric conversion element according to one embodiment of the present disclosure includes: a first electrode and a second electrode that are disposed side by side; a third electrode disposed to oppose the first electrode and the second electrode; a photoelectric conversion layer provided between the first electrode and the second electrode and the third electrode; an oxide semiconductor layer provided between the first electrode and the second electrode and the photoelectric conversion layer; and a protective layer provided between the photoelectric conversion layer and the oxide semiconductor layer. The protective layer includes a first layer and a second layer that include oxygen (O), an element X, and an element Y as a common element. The first layer and the second layer are stacked in this order from a side of the oxide semiconductor layer. The first layer and the second layer satisfy R.sub.x1>R.sub.x20 and 0R.sub.y1<R.sub.y2 in a case where a composition ratio of the element X and the element Y is defined as number of atoms of each of the element X and the element Y divided by total number of atoms of the element X and the element Y, and where the composition ratio of the element X included in the first layer is referred to as R.sub.x1, the composition ratio of the element Y included in the first layer is referred to as R.sub.y1, the composition ratio of the element X included in the second layer is referred to as R.sub.x2, and the composition ratio of the element Y included in the second layer is referred to as R.sub.y2.

Composite materials that include a polymer matrix and a metal halide perovskite. The metal halide perovskite may be a lead-free metal halide double perovskite. Devices that include a layer of a composite material, a first electrode, and a second electrode. Methods of forming composite materials and devices, including methods that include printing one or more layers with a 3D printer.

Composite materials that include a polymer matrix and a metal halide perovskite. The metal halide perovskite may be a lead-free metal halide double perovskite. Devices that include a layer of a composite material, a first electrode, and a second electrode. Methods of forming composite materials and devices, including methods that include printing one or more layers with a 3D printer.

Composite materials that include a polymer matrix and a metal halide perovskite. The metal halide perovskite may be a lead-free metal halide double perovskite. Devices that include a layer of a composite material, a first electrode, and a second electrode. Methods of forming composite materials and devices, including methods that include printing one or more layers with a 3D printer.

Composite materials that include a polymer matrix and a metal halide perovskite. The metal halide perovskite may be a lead-free metal halide double perovskite. Devices that include a layer of a composite material, a first electrode, and a second electrode. Methods of forming composite materials and devices, including methods that include printing one or more layers with a 3D printer.

The present invention provides a photoelectric conversion element having excellent quantum efficiency in a case of receiving blue light. In addition, an imaging element, an optical sensor, a compound, and a manufacturing method of a compound, which are related to the photoelectric conversion element, are provided. The photoelectric conversion element according to the present invention is a photoelectric conversion element including a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).

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Composite materials that include a polymer matrix and a metal halide perovskite. The metal halide perovskite may be a lead-free metal halide double perovskite. Devices that include a layer of a composite material, a first electrode, and a second electrode. Methods of forming composite materials and devices, including methods that include printing one or more layers with a 3D printer.