A photoelectric conversion element includes a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode in this order, wherein the photoelectric conversion layer includes quantum dots and a first organic compound, the first organic compound satisfies Formula (1), an electron affinity of a material used for the first interfacial layer, an electron affinity of the quantum dots, and an electron affinity of the first organic compound satisfy Formulas (2) and (3):
E2>E1(1) E1 [eV]: energy at short-wavelength end of optical wavelength region detected by the photoelectric conversion element E2 [eV]: band gap of the first organic compound
E3<E40.2(2)
E40.4<E5<E4(3) E3 [eV]: electron affinity of material used for the first interfacial layer E4 [eV]: electron affinity of the quantum dots E5 [eV]: electron affinity of the first organic compound.

According to an aspect, a detection device includes: a photodiode; and a detection circuit that is coupled to an anode or a cathode of the photodiode via a switch and is configured to output a sensor value corresponding to a current output from the photodiode. The detection circuit is configured to measure the current output from the photodiode and output the sensor value, after a lapse of a predetermined period from a first time point at which the switch is turned on.

According to an aspect, a detection device includes: a photodiode; and a detection circuit that is coupled to an anode or a cathode of the photodiode via a switch and is configured to output a sensor value corresponding to a current output from the photodiode. The detection circuit is configured to measure the current output from the photodiode and output the sensor value, after a lapse of a predetermined period from a first time point at which the switch is turned on.

The present invention relates to a metal complex, a semiconductor layer comprising the metal complex and an organic electronic device comprising at least one metal complex thereof.

A quantum dot ensemble of an embodiment of the present disclosure includes a plurality of quantum dots (120) each including a core (121) including a compound semiconductor and a shell layer (122) including one or more organic ligands (122A) coordinated to a surface of the core (121) and an oxide film (122B) that covers a portion of the surface of the core (121) to which the one or more organic ligands (122A) are not coordinated, and adjacent quantum dots of the plurality of quantum dots (120) are adjacent through the one or more organic ligands (122A) or the oxide film (122B).

Disclosed are a photodiode element, and a sensor and an electronic device including the same. The photodiode element includes a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode and having an absorption spectrum in a first wavelength spectrum, a light-emitting layer between the photoelectric conversion layer and the second electrode and having an emission peak wavelength belonging to the first wavelength spectrum, and a first charge transport layer between the photoelectric conversion layer and the light-emitting layer.

Disclosed are a photodiode element, and a sensor and an electronic device including the same. The photodiode element includes a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode and having an absorption spectrum in a first wavelength spectrum, a light-emitting layer between the photoelectric conversion layer and the second electrode and having an emission peak wavelength belonging to the first wavelength spectrum, and a first charge transport layer between the photoelectric conversion layer and the light-emitting layer.

According to an aspect, a detection device includes: a substrate having a notch; a terminal part provided at one end in the first direction of the substrate; a first optical sensor provided between the notch and the terminal part; and a second optical sensor provided between the notch and another end of the substrate. The upper electrode of the first optical sensor is coupled to a first power supply electrode and coupled to the terminal part via a first wiring line coupled to the first power supply electrode. The upper electrode of the second optical sensor is coupled to a second power supply electrode and coupled to the terminal part via a second wiring line coupled to the second power supply electrode. The lower electrodes of the first and second optical sensors are coupled to the terminal part via third wiring lines.

A detection device includes: an active area including an active layer of a photodiode; a coupling area provided with a coupling part at an end of a first substrate; a peripheral area between the active area and the coupling area; a sealing film sealing the active area and the peripheral area; and a first wiring line that couples a lower electrode to the coupling part. The peripheral area includes: a first portion that includes a first insulating layer, the sealing film, a second insulating layer, and a second substrate on the first substrate; and a second portion in which at least one of the sealing film, the second insulating layer, and the second substrate is removed compared with the first portion. A boundary line between the first and second portions extends along a direction from the coupling area toward the active area and intersects the first wiring line.

A detection device includes: an active area including an active layer; a coupling area with a coupling part provided at an end of a first substrate; a peripheral area between the active area and the coupling area; a sealing film sealing the active area and the peripheral area; and a first wiring line coupling a lower electrode to the coupling part. The peripheral area includes: a first portion including the first insulating layer, the sealing film, the second insulating layer, and the second substrate; and a second portion including at least one of the sealing film, the second insulating layer, and the second substrate as compared with the first portion. The first wiring line intersects a boundary line provided between the first and second portions along a longitudinal direction of the second substrate formed in a band shape that intersects a direction from the coupling area toward the active area.