H10K30/60

OPTOELECTRONIC COMPONENT WITH INTEGRATED APERTURE MASK

In order to shade the inhomogeneous edge region (503) of organic optoelectronic components (1, 1), which region causes artefacts in the photosignal of the components, it is known practice, after the deposition of all the layers of a component, for an aperture mask to be adhesively bonded on the encapsulation of said component. The alignment of the aperture mask constitutes not only an additional work step, but also a considerable source of error. The invention overcomes these disadvantages by virtue of the fact that at least one radiation-repellent layer (3) which covers the edge region (503) of a photodetector (5) of the optoelectronic component (1, 1), but not more than 30% of the selective area (502) thereof, is deposited, preferably by means of a coating method, directly onto a radiation incoupling layer (4) covering the entire sensitive area (501), such that the at least one radiation-repellent layer (3) is integrally bonded to the radiation incoupling layer (4).

OPTOELECTRONIC COMPONENT WITH INTEGRATED APERTURE MASK

In order to shade the inhomogeneous edge region (503) of organic optoelectronic components (1, 1), which region causes artefacts in the photosignal of the components, it is known practice, after the deposition of all the layers of a component, for an aperture mask to be adhesively bonded on the encapsulation of said component. The alignment of the aperture mask constitutes not only an additional work step, but also a considerable source of error. The invention overcomes these disadvantages by virtue of the fact that at least one radiation-repellent layer (3) which covers the edge region (503) of a photodetector (5) of the optoelectronic component (1, 1), but not more than 30% of the selective area (502) thereof, is deposited, preferably by means of a coating method, directly onto a radiation incoupling layer (4) covering the entire sensitive area (501), such that the at least one radiation-repellent layer (3) is integrally bonded to the radiation incoupling layer (4).

COMPOUND, ORGANIC THIN FILM, PHOTOELECTRIC CONVERSION ELEMENT, IMAGE SENSOR, PHOTOSENSOR AND SOLID-STATE IMAGING APPARATUS

Provided is a compound represented by the following formula (1) having an axis of symmetry in a molecular structure, wherein at least one of R.sub.3, R.sub.4, R.sub.5 and R.sub.6 is not a hydrogen atom:

##STR00001##

wherein each of R.sub.1 and R.sub.2 is a hydrogen atom, and R.sub.3 to R.sub.6 are each independently a hydrogen atom, a halogen atom, a linear, branched or cyclic alkyl group, or the like.

COMPOUND, ORGANIC THIN FILM, PHOTOELECTRIC CONVERSION ELEMENT, IMAGE SENSOR, PHOTOSENSOR AND SOLID-STATE IMAGING APPARATUS

Provided is a compound represented by the following formula (1) having an axis of symmetry in a molecular structure, wherein at least one of R.sub.3, R.sub.4, R.sub.5 and R.sub.6 is not a hydrogen atom:

##STR00001##

wherein each of R.sub.1 and R.sub.2 is a hydrogen atom, and R.sub.3 to R.sub.6 are each independently a hydrogen atom, a halogen atom, a linear, branched or cyclic alkyl group, or the like.

DETECTION DEVICE
20260101627 · 2026-04-09 ·

According to an aspect, a detection device includes: an optical sensor comprising a plurality of light-receiving elements configured to receive light; and a front light that is located on an object to be detected side of the optical sensor and comprises a light guide film and a plurality of light sources configured to emit light to a first side surface of the light guide film. A wire-grid polarizer configured to separate the light incident from the light source into first polarized light and second polarized light is located between the optical sensor and the front light.

DETECTION DEVICE
20260101627 · 2026-04-09 ·

According to an aspect, a detection device includes: an optical sensor comprising a plurality of light-receiving elements configured to receive light; and a front light that is located on an object to be detected side of the optical sensor and comprises a light guide film and a plurality of light sources configured to emit light to a first side surface of the light guide film. A wire-grid polarizer configured to separate the light incident from the light source into first polarized light and second polarized light is located between the optical sensor and the front light.

NOVEL ORGANIC COMPOUND, PHOTODIODE INCLUDING SAME, ELECTRONIC APPARATUS INCLUDING SAME PHOTODIODE

Disclosed herein are an organic compound represented by Chemical Formula 1 and a photodiode, wherein the organic compound is available in a photoactive layer of the photodiode. Chemical Formula 1 is as described in the description.

NOVEL ORGANIC COMPOUND, PHOTODIODE INCLUDING SAME, ELECTRONIC APPARATUS INCLUDING SAME PHOTODIODE

Disclosed herein are an organic compound represented by Chemical Formula 1 and a photodiode, wherein the organic compound is available in a photoactive layer of the photodiode. Chemical Formula 1 is as described in the description.

PHOTOELECTRIC CONVERSION ELEMENT AND PHOTODETECTOR

A first photoelectric conversion element according to an embodiment of the present disclosure includes: an electrode layer including a first electrode and a second electrode disposed side by side with each other; a third electrode disposed to be opposed to the first electrode and the second electrode; a photoelectric conversion layer provided between the electrode layer and the third electrode; an oxide semiconductor layer provided between the electrode layer and the photoelectric conversion layer; and a first insulating layer provided between the electrode layer and the oxide semiconductor layer. The first insulating layer has an opening in which an entire top surface of the first electrode is in contact with the oxide semiconductor layer without the first insulating layer being interposed therebetween.

PHOTOELECTRIC CONVERSION ELEMENT AND PHOTODETECTOR

A first photoelectric conversion element according to an embodiment of the present disclosure includes: an electrode layer including a first electrode and a second electrode disposed side by side with each other; a third electrode disposed to be opposed to the first electrode and the second electrode; a photoelectric conversion layer provided between the electrode layer and the third electrode; an oxide semiconductor layer provided between the electrode layer and the photoelectric conversion layer; and a first insulating layer provided between the electrode layer and the oxide semiconductor layer. The first insulating layer has an opening in which an entire top surface of the first electrode is in contact with the oxide semiconductor layer without the first insulating layer being interposed therebetween.