In a first aspect of the present disclosure, there is provided a nonvolatile memory device comprising: two electrodes; and a protein switching layer interposed between the two electrodes and including an amino acid, wherein then a voltage is applied to one of the electrodes, the amino acid chelates with an active electrode material to form a conductive filament, wherein the formation of the conductive filament allows a resistance state of the device to vary.

An ultra-thin and highly transparent wafer-type plasmonic solar cell comprising a layer of a conductive transparent substrate, a layer of an n-type semiconductor; a layer made of metal nanoparticles selected from the group consisting of copper, gold or silver and a layer made of a p-type semiconductor; wherein the substrate, n-type semiconductor, metal nanoparticles and p-type semiconductor respectively are linked by covalent bonds by means of one or more molecular linker/linkers. A method for producing said plasmonic solar cell by self- assembly.

A display device includes: a substrate; a TFT layer provided on the substrate; a light-emitting element layer provided on the TFT layer and including a plurality of light-emitting elements; and at least one thermal insulation layer, the thermal insulation layer containing: a cellulosic resin; and a metal oxide or a metal carbonyl compound.

The large-scale artificial synaptic device arrays based on the organic molecule-nanowire heterojunctions with tunable photoconductivity are proposed and demonstrated. The organic thin films of p-type 2,7-dioctyl[1]benzothieno[3,2-b][1] benzothiophene (C8-BTBT) or n-type phenyl-C61-butyric acid methyl ester (PC61BM) are used to wrap the InGaAs nanowire parallel arrays to configure two different type-I heterojunctions, respectively. Due to the difference in carrier injection, persistent negative photoconductivity (NPC) or positive photoconductivity (PPC) are achieved in these heterojunctions. The irradiation with different wavelengths (solar-blind to visible ranges) can stimulate the heterojunction devices, effectively mimicking the synaptic behaviors with two different photoconductivities. Evidently, these photosynaptic devices are illustrated with retina-like behaviors and capabilities for large-area integration, which reveals their promising potential for artificial visual systems.

A method of manufacturing flexible substrate is provided, the method comprising following steps: pasting a heat dissipation sheet on a carrier substrate; preparing a thermal insulating layer on the heat dissipation sheet; preparing a flexible substrate layer on the thermal insulating layer; preparing a display element on the flexible substrate layer; and separating the carrier substrate and the heat dissipation sheet and obtaining a flexible substrate. The method of manufacturing flexible substrate and the flexible substrate are provided by this invention, which could reduce thickness of flexible substrate and enhances curving property.

A method of manufacturing flexible substrate is provided, the method comprising following steps: pasting a heat dissipation sheet on a carrier substrate; preparing a thermal insulating layer on the heat dissipation sheet; preparing a flexible substrate layer on the thermal insulating layer; preparing a display element on the flexible substrate layer; and separating the carrier substrate and the heat dissipation sheet and obtaining a flexible substrate. The method of manufacturing flexible substrate and the flexible substrate are provided by this invention, which could reduce thickness of flexible substrate and enhances curving property.

In a first aspect of the present disclosure, there is provided a nonvolatile memory device comprising: two electrodes; and a protein switching layer interposed between the two electrodes and including an amino acid, wherein then a voltage is applied to one of the electrodes, the amino acid chelates with an active electrode material to form a conductive filament, wherein the formation of the conductive filament allows a resistance state of the device to vary.

A storage device according to an embodiment includes a first conductive layer, a second conductive layer, and a resistance change layer. The resistance change layer is positioned between the first conductive layer and the second conductive layer. The resistance change layer including an organic compound. The organic compound has at least one first functional group selected from the group consisting of an amino group, a thiol group, a carboxy group, and an azide group, and the organic compound has one or less aromatic rings.

A two-bit memory device having a layer structure containing in order a bottom layer, a molecular layer containing a chiral compound having at least one polar functional group, and a top layer, which is electrically conductive and ferromagnetic. The chiral compound acts as a spin filter for electrons passing through the molecular layer. The chiral compound is of flexible conformation and has a conformation-flexible molecular dipole moment. An electrical resistance of the layer structure for an electrical current running from the bottom layer to the top layer has at least four distinct states which depend on the magnetization of the top layer and on the orientation of the conformation-flexible dipole moment of the chiral compound. Furthermore, a method for operating the two-bit memory device and an electronic component containing at least one two-bit memory device.

A display device includes a plurality of islands and a bridge connecting the plurality of islands to each other. Each of the plurality of islands includes a flexible substrate, a thin film transistor positioned on a first surface of the flexible substrate, a first electrode connected to the thin film transistor, and a protective mask positioned on a second surface of the flexible substrate.