According to one embodiment, a radiation detector includes a first member including a scintillator layer, an organic member including an organic semiconductor layer, and a first conductive layer. The first conductive layer includes a first conductive region and a second conductive region. A second direction from the first conductive region toward the second conductive region crosses a first direction from the organic member toward the first member. A first portion of the organic member is between the first conductive region and the second conductive region in the second direction.

Provided are a photoelectric conversion element including a first electrode having a photosensitive layer including a light absorber on a conductive support and a second electrode facing the first electrode, in which the light absorber includes a compound having a perovskite-type crystal structure, and a compound represented by a specific formula is provided on a surface of the first electrode, a solar cell using the same, and a method for manufacturing a photoelectric conversion element including bringing a first electrode having a photosensitive layer in which a compound having a specific perovskite-type crystal structure is included as a light absorber on a conductive support into contact with a liquid containing a compound represented by specific Formula (AC).

An electroluminescent device, a manufacturing method thereof, and a display apparatus are provided. The electroluminescent device includes an anode layer, a light emitting layer, a cathode layer, a hole transport layer located between the anode layer and the light emitting layer, and a electron transport layer located between the cathode layer and the light emitting layer. The electroluminescent device further includes: a first interface modification layer between the light emitting layer and one of the hole transport layer and the electron transport layer; wherein an energy level of the first interface modification layer matches an energy level of the light emitting layer and an energy level of the one of the hole transport layer and the electron transport layer.

Provided are a photoelectric conversion device giving high photoelectric conversion efficiency and a production method thereof. A photoelectric conversion device having an anode, a cathode, an active layer containing a perovskite compound disposed between the anode and the cathode, and a hole injection layer disposed between the anode and the active layer, wherein hole injection layer is a layer having a residual film rate of 80% or more in measurement of the residual film rate after a water rinse treatment, and the material of the hole injection layer is at least one material selected from the group consisting of polythiophene and derivatives thereof, aromatic amine compounds, and polymer compounds having an aromatic amine residue containing a phenyl group having at least three substituents as a repeating unit.

Provided are an organic photodetector and an electronic apparatus including the same. The organic photodetector includes a first electrode, a second electrode facing the first electrode, an auxiliary layer arranged between the first electrode and the second electrode, and an activation layer arranged between the first electrode and the activation layer. The auxiliary layer includes a compound having a refractive index of about 2.2 or more.

The present embodiment provide a method for evaluating anion permeability of a graphene-containing membrane and also to provide a photoelectric conversion device employing a graphene-containing membrane having controlled anion permeability. The method comprises: preparing a measuring apparatus comprising an aqueous solution containing anions, a working electrode containing silver-metal, a counter electrode and a reference electrode; measuring the reaction current I.sub.0 between the silver-metal and the anions while the electrode potential of the working electrode to the counter electrode is being periodically changed and driven under the condition that the electrodes are in contact with the aqueous solution;
measuring the reaction current I.sub.1 under the condition that, instead of the working electrode, the graphene-containing membrane electrically connecting to the working electrode is in contact with the aqueous solution; and
comparing the currents I.sub.0 and I.sub.1 to evaluate anion-permeability of the graphene-containing membrane.

The disclosure provides a method of manufacturing an organic electronic device, including providing a layered device structure, the layered device structure including a plurality of electrodes and an electronically active region, said providing of the layered device structure including steps of providing an organic semiconducting layer, applying a structuring layer to the organic semiconducting layer, the structuring layer having a first region and a second region, the first region being covered by a layer material, applying a contact improving layer to the structuring layer by depositing at least one of an organic dopant material and an organic dopant-matrix material at least in the first region, depositing a layer material on the contact improving layer at least in the first region, and removing the structuring layer at least in the second region. Furthermore, an organic electronic device is provided.

Composite materials comprising electrically conductive particles in a form-stable phase change materials (PCMs) are provided. Also provided as radiation sensors incorporating the composites and methods for detecting radiation using the composites. The PCMs comprise crosslinked polyether polyol that undergoes a reversible solid-solid phase change upon heating. Prior to the phase change, the crosslinked polyether polyol comprises microscopic crystalline domains. When the PCM is heated beyond its phase transition temperature these microscopic crystalline domains melt. However, the form-stable PCMs retain their solid form at the macroscopic level.

An oxide layer (2) of tin or niobium is formed on one surface of a carbon nanotube-containing layer (1) containing carbon nanotubes having an average diameter (Av) and a diameter standard deviation (σ) that satisfy a relationship 0.60>3σ/Av>0.20.

An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.