An infrared photodetector including a stack of layers on a substrate having an active area made of organic semiconductor materials capable of converting an infrared radiation into an electric signal and including, in said stack and/or on the substrate, a single layer at least partially filtering visible light.

Methods and devices for forming painted circuits using multiple layers of electrically conductive paint. In one aspect, a painted circuit includes a substrate (111) and one or more paint layer (106, 108, 110, 112, 114, 116, 120, 122) applied to the substrate, where the one or more paint layers each form an electrical component of the painted circuit. A given paint layer of the one or more paint layers includes a conductive paint formulation having a resistance that is defined by a concentration of conductive material that is included in the conductive paint formulation and a thickness of the given paint layer, and lower concentrations of the conductive material included in the conductive paint formulation provide a higher resistance than higher concentrations of conductive material.

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The present invention aims to provide a solar cell having high photoelectric conversion efficiency that is less likely to decrease even under prolonged application of a voltage. Provided is a solar cell including a cathode, a photoelectric conversion layer, a diffusion prevention layer, and an anode in the stated order, the cathode being a transparent electrode, the anode containing at least one selected from the group consisting of aluminum, copper, antimony, and molybdenum, the photoelectric conversion layer containing an organic-inorganic perovskite compound represented by the formula AMX wherein A represents an organic base compound and/or an alkali metal, M represents a lead or tin atom, and X represents a halogen atom, the diffusion prevention layer being a diffusion prevention layer that contains molybdenum, tungsten, tantalum, niobium, zirconium, hafnium, or an alloy of two or more thereof and has a thickness of 5 to 30 nm, a diffusion prevention layer that contains an oxide containing titanium, gallium, zinc, tin, indium, antimony, molybdenum, tungsten, vanadium, chromium, nickel, or lead, a diffusion prevention layer that contains a nitride containing titanium, vanadium, chromium, niobium, tantalum, molybdenum, zirconium, or hafnium and has a thickness of 5 to 50 nm, or a diffusion prevention layer that contains graphite and has a thickness of 2 nm to 50 nm.

A solar cell having high conversion efficiency is provided. A solar cell of the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and a first electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has translucency. The photoelectric conversion layer includes a perovskite compound containing a monovalent cation, a Sn cation and a halogen anion. The first electron transport layer includes porous niobium oxide.

A light emitting diode according to embodiments of the present disclosure includes a first electrode, a second electrode opposite the first electrode, an emission layer between the first electrode and the second electrode, the emission layer including a quantum dot, a first charge transfer layer between the first electrode and the emission layer, a second charge transfer layer between the second electrode and the emission layer, and an insulating layer in at least one position between the first charge transfer layer and the emission layer, and/or between the second charge transfer layer and the emission layer, wherein the insulating layer includes an inorganic material. The light emitting diode and a display device including the same show improved life characteristics and emission efficiency properties.

A camera system including a photoelectric convertor including a first and second electrode, and a photoelectric conversion layer; and a correction circuit correcting a signal corresponding to a potential change of the second electrode. The photoelectric convertor has a photoelectric conversion characteristic in which rate of change of the photoelectric conversion efficiency with respect to a first bias voltage between the first electrode and the second electrode when the first bias voltage is in a first voltage range, is greater than the rate of change with respect to a second bias voltage when the second bias voltage is in a second voltage range that is higher than the first voltage range, and a bias voltage between the first electrode and the second electrode exists in the first voltage range, and the correction circuit corrects the signal so that variation of an output regarding an amount of incident light becomes linear.

A hybrid fiber for detection of UV light is described. The hybrid fiber includes a conductor, a first layer, a photoactive layer, a second layer, and a transparent electrode. The conductor includes a conductive material. The first layer includes a first material deposited onto the conductor. The first material is configured to transport holes and block electrons. The photoactive layer includes a photoactive material coating the first layer. The photoactive material includes a first submaterial and a second submaterial. The second layer includes a second material deposited onto the photoactive layer. The second material is configured to block holes and transport electrons. The transparent electrode includes a transparent electrode material deposited onto the second layer.

A substrate for flexible device. The substrate has a nickel-plated metal sheet having a nickel-plating layer formed on at least one surface of a metal sheet or a nickel-based sheet, and a glass layer of an electrically-insulating layered bismuth-based glass on a surface of the nickel-plating layer or the nickel-based sheet. An oxide layer having a roughened surface is formed on the surface of the nickel-plating layer or the surface of the nickel-based sheet, and the bismuth-based glass contains 70 to 84% by weight of Bi.sub.2O.sub.3, 10 to 12% by weight of ZnO, and 6 to 12% by weight of B.sub.2O.sub.3. Also disclosed is a method for producing the substrate for flexible device, a substrate for an organic EL device, a sheet used as a substrate for flexible device, a method for producing the sheet and a bismuth-based lead-free glass composition.

Disclosed are an optical filter including a near infrared absorption layer on a polymer film. The polymer film has a* of about −5.0 to about +5.0 and b* of about −5.0 to about +5.0 in a color coordinate expressed by a CIE Lab color space. The near infrared absorption layer may be configured to transmit light in a visible region and to selectively absorb at least one part of light in a near infrared region. The near infrared absorption layer includes a first near infrared absorption material including a copper phosphate ester compound and a second near infrared absorption material including at least two different organic dyes. The second near infrared absorption material has a maximum absorption wavelength (λ.sub.max) in a wavelength region of about 650 nm to about 1200 nm. An electronic device may include the optical filter.