Patent classifications
H10K39/30
METHOD FOR DETECTING AND CONVERTING INFRARED ELECTROMAGNETIC RADIATION
A method for detecting infrared electromagnetic radiation and for converting same into an electrical signal, an optoelectronic component, in particular an organic infrared detector for (near) infrared detection, and use thereof for detecting an electromagnetic signal in the wavelength range of 780 nm to 10 ?m, are provided.
Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.
Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
Embodiments of the invention are directed to an improved device for sensing infrared (IR) radiation with up-conversion to provide an output of electromagnetic radiation having a shorter wavelength than the incident IR radiation, such as visible light. The device comprises an anode, a hole blocking layer to separate an IR sensing layer from the anode, an organic light emitting layer that is separated from the anode by the IR sensing layer, and a cathode. The hole blocking layer assures that when a potential is applied between the anode and the cathode the organic light emitting layer generates electromagnetic radiation only when the IR sensing layer is irradiated with IR radiation.
INFRARED PHOTODETECTOR
An infrared photodetector including a stack of layers on a substrate having an active area made of organic semiconductor materials capable of converting an infrared radiation into an electric signal and including, in said stack and/or on the substrate, a single layer at least partially filtering visible light.
Photo-electron source assembly with scaled nanostructures and nanoscale metallic photonic resonant cavity, and method of making same
A new ultra-thin high-efficiency photoelectron source utilizing a metallic photonic resonant cavity having a photonic resonant cavity with a top metallic layer with a plurality of openings, each having an average dimension less than the wavelength of the excitation photons in vacuum, a bottom metallic layer and a photoelectron emission layer of semiconductor positioned between the top metallic layer and the bottom metallic.
Method of fabricating an organic photodiode with dual electron blocking layers
Embodiments of forming an image sensor with an organic photodiode are provided. The organic photodiode uses dual electron-blocking layers formed next to the anode of the organic photodiode to reduce dark current. By using dual electron-blocking layers, the values of highest occupied molecular orbital (HOMO) for the neighboring anode layer and the organic electron-blocking layer are matched by one of the dual electron-blocking layers to form a photodiode with good performance. The values of the lowest occupied molecular orbital (LOMOs) of the dual electron-blocking layers are selected to be lower than the neighboring anode layer to reduce dark current.
THIADIAZOLOPYRIDINE POLYMERS, THEIR SYNTHESIS AND THEIR USE
The present invention relates to thiadiazolopyridine polymers, their synthesis and their use. The present invention further relates to organic electronic devices comprising such thiadiazolopyridine polymers.
ORGANIC PHOTODETECTORS AND PRODUCTION METHOD THEREOF
An organic photodetector for detecting infrared, visible and ultraviolet radiation is provided with a tunable spectral response to achieve a high responsivity at different design wavelengths. The organic photodetector comprises at least a substrate, a first electrode, a second electrode and at least one organic material, which is arranged between the first and the second electrodes, wherein a Schottky barrier is formed at the interface between the first electrode and the organic material and/or at the interface between the second electrode and the organic material. The tunability in the responsivity of the organic photodetector is achieved by structuring at least one electrode so that it comprises nano-apertures for exciting surface plasmon resonances.
Display substrate having photosensitive sensing unit located in visible light signal receiving region
Provided are a display substrate and a manufacturing method thereof, and a visible light communication apparatus. The display substrate includes a substrate, and the substrate includes a display region and a peripheral region surrounding the display region; the peripheral region includes a visible light signal receiving region surrounding the display region; the display substrate further includes a photosensitive sensing unit, the photosensitive sensing unit is located in the visible light signal receiving region and is configured to receive a visible light signal and convert the visible light signal into an electrical signal to achieve visible light communication.
OPTICAL SENSOR
An optical sensor includes a plurality of lower electrodes adjacent to one another, an organic material layer that includes a lower carrier transport layer including a plurality of first electrode covering parts each covering at least an upper surface of corresponding one of the plurality of lower electrodes, and a carrier mobility reducing part that is provided in at least a part of an area between the adjacent first electrode covering parts so as to reduce carrier mobility of the adjacent first electrode covering parts.