A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.

The invention relates to novel organic semiconductor (OSC) formulations, to their use for the preparation of OSC layers or OSC patterns in organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photo-detectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising an OSC layer or OSC pattern prepared from these OSC formulations.

Techniques regarding operating one or more parallel dipole line traps are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a parallel dipole line trap comprising a diamagnetic object positioned between a plurality of dipole line magnets. The system can also comprise a split photodetector sensor positioned adjacent to the parallel dipole line trap. The split photodetector sensor can detect a displacement of the diamagnetic object.

Techniques regarding operating one or more parallel dipole line traps are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a parallel dipole line trap comprising a diamagnetic object positioned between a plurality of dipole line magnets. The system can also comprise a split photodetector sensor positioned adjacent to the parallel dipole line trap. The split photodetector sensor can detect a displacement of the diamagnetic object.

An infrared photodetector including a stack of layers on a substrate having an active area made of organic semiconductor materials capable of converting an infrared radiation into an electric signal and including, in said stack and/or on the substrate, a single layer at least partially filtering visible light.

A device for detecting an electromagnetic radiation has at least one photodetector including an organic diode and an organic photodiode formed in a same stack of semiconductor layers, the organic photodiode receiving the radiation. The photodetector further includes at least one screen which is opaque to the radiation and screens the portion of the stack corresponding to the diode.

A method for detecting infrared electromagnetic radiation and for converting same into an electrical signal, an optoelectronic component, in particular an organic infrared detector for (near) infrared detection, and use thereof for detecting an electromagnetic signal in the wavelength range of 780 nm to 10 μm, are provided.

An embodiment of the present disclosure provides an array substrate and a display panel. The array substrate includes a base substrate, organic electroluminescence components arranged on the base substrate in an array, and a photoelectric conversion component corresponding to each of the organic electroluminescence components. A luminescent spectrum of each organic electroluminescence component comprises a first waveband and a second waveband. The first waveband is determined by an emission peak of the luminescent spectrum, and is used to determine brightness and tone purity of light emitted by the organic electroluminescence component. The photoelectric conversion component is at least used to convert light of the second waveband emitted by a corresponding organic electroluminescence component into electric energy.

A photodetector comprising an optical waveguide structure comprising at least three stripes spaced from one another such that a slot is present between each two adjacent stripes of the at least three stripes. A graphene absorption layer is provided over or underneath the at least three stripes. There is an electrode for each stripe, over or underneath the graphene absorption layer. The photodetector is configured such that two adjacent electrodes are biased using opposite polarities to create a p-n junction effect in a portion of the graphene absorption layer. In particular the portion of the graphene absorption layer is located over or underneath each respective slot between said each two adjacent stripes.

A sensor device for detecting an incident energy beam, the sensor device having stacked layers, the layers having: a first photodiode layer, at least four measuring contacts being arranged on electrode layers of the first photodiode layer, at each of which a partial current of a photocurrent dependent on the incident energy beam can be tapped, to determine an x and y coordinate in the three-dimensional coordinate system; and a second photodiode layer fixed to the first photodiode layer, at least four measuring contacts being arranged on electrode layers of the second photodiode layer, at each of which a partial current of a photocurrent dependent on the incident energy beam can be tapped, to determine an x and y coordinate in the three-dimensional coordinate system; wherein at least one of the photodiode layers is transparent.