The invention discloses a flexible, energy-self-sufficient UV dosimeter which optically indicates the absorbed dose on the basis of the intensity and duration of the irradiation via a color change. The invention contains one or more UV dosimeter modules. Exemplary UV dosimeter modules include at least one UV-sensitive photodiode (common electrode (11), hole conductor layer (21), UV absorber layer (22), cathode (23)) and an electrochromic element (common electrode (11), ion storage layer (12), electrolyte layer (13), electrochromic layer made of redox active material (14), transparent electrode (15)), between which an insulator (4) and a conductor track (5) are arranged. The electrochromic element accumulates the charge generated by the UV-sensitive photodiode and indicates this by means of a color change. The UV dosimeter can be produced as an integrated circuit using thin-film technology by successively applying and structuring organic or inorganic functional layers.

The invention discloses a flexible, energy-self-sufficient UV dosimeter which optically indicates the absorbed dose on the basis of the intensity and duration of the irradiation via a color change. The invention contains one or more UV dosimeter modules. Exemplary UV dosimeter modules include at least one UV-sensitive photodiode (common electrode (11), hole conductor layer (21), UV absorber layer (22), cathode (23)) and an electrochromic element (common electrode (11), ion storage layer (12), electrolyte layer (13), electrochromic layer made of redox active material (14), transparent electrode (15)), between which an insulator (4) and a conductor track (5) are arranged. The electrochromic element accumulates the charge generated by the UV-sensitive photodiode and indicates this by means of a color change. The UV dosimeter can be produced as an integrated circuit using thin-film technology by successively applying and structuring organic or inorganic functional layers.

Optical receiver packages and device assemblies that include photodetector (PD) chips having focus lenses monolithically integrated on PD die backsides are disclosed. An example receiver package includes a support structure, a PD die, and an optical input device. The PD die includes a PD, integrated proximate to a first face of the PD die, and further includes a lens, integrated on, or proximate to, an opposite second face. The first face of the PD die faces the support structure, while the second face (backside) faces the optical input device. The optical receiver architectures described herein may provide an improvement for the optical alignment tolerance issues, especially for high-speed operation in which the active aperture of the PD may have to be very small. Furthermore, architectures described herein advantageously enable integrating a focus lens in a PD die that may be coupled to the support structure in a flip-chip arrangement.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Provided is a method of detecting the presence of an object in proximity to an optoelectronic device comprising (a) providing an optoelectronic device comprising a light-emitting optoelectronic element and a photocurrent-generating optoelectronic element, (b) imposing an effective forward bias voltage on the light-emitting optoelectronic element and an effective reverse bias voltage on the photocurrent-generating optoelectronic element, (c) bringing an object capable of scattering or reflecting light or a combination thereof to a distance of 0.1 to 5 mm from a point on the surface of the optoelectronic device from which light emerges, causing light that is emitted by the light-emitting optoelectronic element to be reflected or scattered so that the light falls upon the photocurrent-generating optoelectronic element.

According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, an organic semiconductor layer, and a first region. The first conductive layer includes a first metal. The organic semiconductor layer is provided between the first conductive layer and the second conductive layer. The first region includes the first metal and oxygen and is positioned between the organic semiconductor layer and the first conductive layer.

Provided is an ink composition capable of improving external quantum efficiency of a photoelectric conversion element. A method for producing an ink composition containing a p-type semiconductor material, an n-type semiconductor material, and a solvent, the method comprising: a step of preparing one or more compositions in which one or both of the p-type semiconductor material and the n-type semiconductor material are dissolved in the solvent; and a step of storing the composition for 4 days or longer to prepare the ink composition. The p-type semiconductor material contains a polymer compound having a donor-acceptor structure.

A semiconductor module has a layer structure and at least one capacitive sensor. The layer structure is formed with an upper electrode layer, a lower electrode layer, and an active layer arranged between the electrode layers. The active layer is made of a semiconductor material. The capacitive sensor has a measuring electrode which is integrated into the layer structure. There is also described a device which has such a semiconductor module and a method for producing such a semiconductor module.

A semiconductor module has a layer structure and at least one capacitive sensor. The layer structure is formed with an upper electrode layer, a lower electrode layer, and an active layer arranged between the electrode layers. The active layer is made of a semiconductor material. The capacitive sensor has a measuring electrode which is integrated into the layer structure. There is also described a device which has such a semiconductor module and a method for producing such a semiconductor module.

The present invention provides a photoelectric conversion element having a photoelectric conversion film which exhibits excellent photoelectric conversion efficiency and responsiveness, an imaging device, an optical sensor, and a method of using a photoelectric conversion element. In the photoelectric conversion element of the invention, a photoelectric conversion material contains at least one selected from the group consisting of a compound represented by General formula (1), a compound represented by General formula (2), and a compound represented by General formula (3).

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