An imaging device that has an image processing function and is capable of operating at high speed is provided. The imaging device has an additional function such as image processing, image data obtained by an imaging operation is binarized in a pixel portion, and a product-sum operation is performed using the binarized data. A memory circuit is provided in the pixel portion and retains a weight coefficient used for the product-sum operation. Thus, an arithmetic operation can be performed without the weight coefficient read from the outside every time, so that power consumption can be reduced. Furthermore, a pixel circuit, a memory circuit, and the like and a product-sum operation circuit and the like are formed to be stacked; therefore, the length of a wiring between the circuits can be shortened, and a low-power consumption operation and a high-speed operation can be performed.

According to some embodiments of the present disclosure, a photosynapse device includes an insulating layer, a semiconductor layer on the insulating layer, a photoactive layer on the semiconductor layer, and a pair of spaced apart electrodes. The semiconductor layer is between the insulating layer and the photoactive layer, and the pair of spaced apart electrodes are electrically coupled with the semiconductor layer. Related photonic integrated circuit devices are also discussed.

A multifunctional imaging device is provided. The imaging device includes first to fourth light-receiving elements and first and second functional layers. The first to fourth light-receiving elements are photoelectric conversion elements having sensitivity to light of different wavelengths from each other. The first and second functional layers each include first and second transistors. The first functional layer and the fourth to first light-receiving elements are stacked in this order over the second functional layer. In each of the first to fourth light-receiving elements, a first conductive layer, a first buffer layer, a photoelectric conversion layer, a second buffer layer, and a second conductive layer are stacked in this order. The photoelectric conversion layer includes an organic compound, and the first buffer layer and the second buffer layer each include a metal or an organic compound. The first transistor is electrically connected to the first conductive layer of any of the first to fourth light-receiving elements. The second transistor is electrically connected to the first transistor.

According to an aspect, a detection device includes: a substrate; a plurality of photodiodes in each of which a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode are stacked on the substrate in the order as listed; an insulating film provided between a plurality of the lower electrodes adjacent to each other; and a light-blocking layer provided in an area overlapping the insulating film in plan view. The lower electrodes of the photodiodes are arranged separated from each other so as to correspond to the photodiodes. The lower buffer layer, the active layer, the upper buffer layer, and the upper electrode are provided continuously across the photodiodes so as to cover the lower electrodes and the insulating film.

An imaging device that has an image processing function and is capable of operating at high speed is provided. The imaging device has an additional function such as image processing, image data obtained by an imaging operation is binarized in a pixel portion, and a product-sum operation is performed using the binarized data. A memory circuit is provided in the pixel portion and retains a weight coefficient used for the product-sum operation. Thus, an arithmetic operation can be performed without the weight coefficient read from the outside every time, so that power consumption can be reduced. Furthermore, a pixel circuit, a memory circuit, and the like and a product-sum operation circuit and the like are formed to be stacked; therefore, the length of a wiring between the circuits can be shortened, and a low-power consumption operation and a high-speed operation can be performed.

A semiconductor device and a solar cell each having a bonding structure improving reliability of the semiconductor device or the solar cell and a method of manufacturing the same are provided. A semiconductor device or a solar cell includes: a first semiconductor element SB1 including a silicon layer and having a first bonding surface; a second semiconductor element SB2 having a second bonding surface facing the first bonding surface; and a plurality of electrically-conductive nanoparticles 23 positioned between the first bonding surface and the second bonding surface and electrically connecting the first semiconductor element SB1 and the second semiconductor element SB2 to each other, and the plurality of electrically-conductive nanoparticles 23 intrude into the silicon layer. In addition, a method of manufacturing a semiconductor device or a solar cell includes: a step of preparing a first semiconductor element SB1 and a second semiconductor element SB2; a step of arranging a plurality of electrically-conductive nanoparticles 23 on a first bonding surface of the first semiconductor element SB1; a step of intruding the plurality of electrically-conductive nanoparticles 23 into the silicon layer; and then, a step of facing and pressing the second bonding surface to and against the first bonding surface through the plurality of electrically-conductive nanoparticles 23 therebetween.

A self-powered display device is proposed, and includes a light-transmitting panel and a photoelectric converting module. The light-transmitting panel includes a display region for allowing light to penetrate. The photoelectric converting module is electrically connected to the light-transmitting panel. The photoelectric converting module includes a power generation region for absorbing the light penetrating the display region, and the power generation region converts the light into electrical energy to provide electrical energy to the light-transmitting panel. The light-transmitting panel is spaced apart from the photoelectric converting module, and a projected area of the display region on the power generation region is larger than the area of the power generation region.

A light sensing pixel of a display device includes a first organic photodiode; a second organic photodiode; and a sensing pixel circuit configured to perform a light sensing operation using the first organic photodiode in response to a first transfer signal, and to perform a light sensing operation using the second organic photodiode in response to a second transfer signal.

According to an aspect, a detection device includes: a substrate; an organic optical sensor in which a first lower electrode, a first lower buffer layer, a first active layer, a first upper buffer layer, a first upper electrode, and a common electrode are stacked in the order as listed, in a detection area of the substrate; an organic photovoltaic device in which a second lower electrode, a second lower buffer layer, a second active layer, a second upper buffer layer, and the common electrode are stacked in the order as listed, in the detection area of the substrate; and a sealing film that covers the organic optical sensor and the organic photovoltaic device. The first lower electrode of the organic optical sensor and the common electrode of the organic photovoltaic device each have a light-transmitting property.

Solar cell modules and methods of fabrication are described. In an embodiment, a pair of tandem solar cells are a step surface or trench within the top subcell of a tandem solar cell is at least partially filled with another material such as an insulator support or electrically conductive support to transfer stress away from the absorber layer of the top subcell of the tandem solar cells when stacked or connected with ribbon.