A planar light source emits planar light by power supplied from a mounting member. The planar light source includes an engaging part, a planar-light-emitting panel having a light-emitting surface, and a connecting unit disposed between the engaging part and the planar-light-emitting panel. The engaging part forms a portion of a power supply path for supplying power from the mounting member to the planar-light-emitting panel. The planar-light-emitting panel includes a planar-light-emitting tile and a translucent plate, where one main surface of the planar-light-emitting tile includes a light-emitting region. The planar-light-emitting panel emits, in a lighting state, the planar light from the light-emitting region of the planar-light-emitting tile through the translucent plate. An output of the planar light from the planar light source is adjusted by pressing the light-emitting surface.

An electroluminescence display device includes a pixel electrode; a first organic layer provided on the pixel electrode; a light emitting layer provided on the first organic layer; a second organic layer provided on the light emitting layer; and a counter electrode provided on the second organic layer. The light emitting layer includes a host material, a light emitting dopant material and an assist dopant material. The light emitting dopant material has a first concentration distribution in a thickness direction of the light emitting layer; the assist dopant material has a second concentration distribution in the thickness direction of the light emitting layer; and the first concentration distribution has a concentration peak in a range of the second concentration distribution.

A light emission material includes a first compound satisfying Equation 1:

K2?0.1K1.Equation 1

In Equation 1, K1 is a sum of radiationless transition rate due to internal conversion from a certain specific n-th triplet excitation state to a lower order triplet excitation state including the lowest triplet excitation state, K2 is a reverse intersystem crossing transition rate from the certain specific n-th triplet excitation state to a singlet excitation state which is adjacent to the n-th triplet excitation state, and n is an integer of 2 or more. An organic electroluminescence device including the light emission material may simultaneously attain high emission efficiency and roll-off reduction.

A method of forming a semiconductor film at pressure between 10.sup.?5 atm and 10 atm in the presence of a substrate includes (i) providing a precursor material in a reaction container; (ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and (iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate. A semiconductor film is obtained from this method and a device comprising such semiconductor film is also provided.

A compound may include a partial structures of formula (3-1A), (32h), and (3-11B) in one molecule,

##STR00001##

R.sub.300 to R.sub.306 being independently H or a substituent, or adjacent pair(s) form a ring, at least one of R.sub.301 to R.sub.306 is a single bond to another atom/structure in the molecule, and one of R.sub.301 to R.sub.306 is a single bond to the partial structure of formula (32h), X.sub.30 is N bonded to the partial structure of formula (3-1A), Y.sub.41 to Y.sub.48 are independently CR.sub.32, or C bonded to another atom/structure in the molecule, at least one of Y.sub.41 to Y.sub.48 is C bonded to the partial structure of formula (3-11B), R.sub.32 are independently H or a substituent, or pair(s) of adjacent R.sub.32 are bonded to form a ring, and at least one R.sub.32 is independently a single bond to another atom/structure in the molecule.

A method of fabricating a display device with high resolution is provided. A display device having both high display quality and high resolution is provided. The method of fabricating a display device includes steps of forming a first EL film and a first sacrificial film over a first pixel electrode and a second pixel electrode; etching the first sacrificial film to form a first sacrificial layer; etching the first EL film to form a first EL layer and to expose the second pixel electrode; forming a second EL film and a second sacrificial film; etching the second sacrificial film to form a second sacrificial layer; etching the second EL film to form a second EL layer; forming an insulating film covering the first sacrificial layer, the first EL layer, the second sacrificial layer, and the second EL layer; and etching the insulating film to form an insulating layer including a region in contact with a side surface of the first EL layer and a region in contact with a side surface of the second EL layer.

Provided are a quantum dot light-emitting device and a method for manufacturing same, and a display apparatus. The quantum dot light-emitting device includes: a quantum dot light-emitting layer and a hole injection layer, which is arranged on one side of the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer includes a first surface close to one side of the hole injection layer, a passivation function layer is arranged on the first surface, and the passivation function layer is configured to modify the first surface.

A compound may include partial structures of formula (3-11B) and (31a), mutually bonded in one molecule:

##STR00001##

R.sub.314 being a single bond bonded to * in formula (31a), R.sub.300 being independently H or a substituent, or at least one of adjacent pairs of R.sub.300 are mutually bonded to form a ring, or R.sub.300 is a single bond bonded to another atom/structure in the molecule, one or more R.sub.300 is H, at least one of H being D, Y.sub.12 to Y.sub.16 being independently N, CR.sub.31, or C bonded to another atom/structure in the molecule, 1 to 3 of Y.sub.12 to Y.sub.16 being N, and R.sub.31 independently being H or a substituent.

A display substrate and a display device are provided. The display substrate includes sub-pixels and a pixel defining pattern. The sub-pixel includes a light emitting element including a light emitting region; the light emitting element includes a light emitting functional layer, and a first electrode and a second electrode, and the second electrode covers the light emitting region of the sub-pixel. The pixel defining pattern includes first openings; one sub-pixel corresponds to at least one first opening; at least a portion of the light emitting element of the sub-pixel is in the first opening corresponding to the sub-pixel, and the first opening exposes the first electrode. The pixel defining pattern further includes second openings located between at least part of sub-pixels; and at least one layer of the light emitting functional layer and at least a portion of the second electrode are disconnected at the second opening.

A light-emitting element includes an anode electrode, a QD layer containing QDs, and a cathode electrode, in which the QDs have a core-shell structure including a core and a shell and are Cd-free QDs that emit blue light, the QDs contain halogen elements, and an external quantum efficiency percentage of the light-emitting element is 7% or more.