The present disclosure relates to a pixel circuit, a driving method therefor, and a display apparatus. The pixel circuit includes an input sub-circuit, a light emission control sub-circuit and an organic light-emitting transistor. The input sub-circuit is coupled to a gate line, a data line and the light emission control sub-circuit and writes a data signal supplied via the data line into the light emission control sub-circuit under control of a gate scan signal supplied via the gate line. The light emission control sub-circuit is coupled to a control electrode of the organic light-emitting transistor and controls a control electrode voltage of the organic light-emitting transistor according to a written data signal to drive the organic light-emitting transistor to emit light. With the pixel circuit according to embodiments of the present disclosure, active driving of an organic light-emitting transistor is achieved when it is applied in a display apparatus.

A display panel disclosed in the application includes a display region and a peripheral region. The display panel includes a substrate and at least one dam disposed on the substrate. The dam is in the peripheral region. An anode is disposed on the substrate and is in the peripheral region. A plurality of holes is provided on the anode to expose the dam. In a direction which the display region faces the peripheral region, a size of the holes is greater than a size of the dam.

The present disclosure provides a composition containing an iridium complex represented by general formula (1) below and a halogen atom. The content of the halogen atom is less than 5 ppm.

##STR00001##

In general formula (1), R.sup.8 to R.sup.20 are each a hydrogen atom or a substituent. R.sup.14 is an electron-withdrawing substituent having a Hammett constant σm of 0.3 or more, and R.sup.1 to R.sup.7 are each a hydrogen atom or a methyl group.

The present disclosure provides a composition containing an iridium complex represented by general formula (1) below and a halogen atom. The content of the halogen atom is less than 5 ppm.

##STR00001##

In general formula (1), R.sup.8 to R.sup.20 are each a hydrogen atom or a substituent. R.sup.14 is an electron-withdrawing substituent having a Hammett constant σm of 0.3 or more, and R.sup.1 to R.sup.7 are each a hydrogen atom or a methyl group.

Provided are a display panel, a manufacturing method thereof and a display apparatus. The display panel includes a fingerprint identification sensor, a first light shield layer disposed on the fingerprint identification sensor and a color film layer disposed on the first light shield layer, wherein the color film layer includes color filters with different colors and light transmission parts disposed between the color filters with different colors; the first light shield layer includes first openings and light shield parts, the light transmission parts and the first openings are used for allowing fingerprint reflected light to transmit and reach the fingerprint identification sensor, and the light shield parts are used for blocking out stray light.

A method of making an OLED device includes providing a first undercut lift-off structure over the device substrate having a first array of bottom electrodes. Next, one or more first organic EL medium layers including at least a first light-emitting layer are deposited over the first undercut lift-off structure and over the first array of bottom electrodes. The first undercut lift-off structure and overlying first organic EL medium layer(s) are removed by treatment with a first lift-off agent comprising a fluorinated solvent to form a first intermediate structure. The process is repeated using a second undercut lift-off structure to deposit one or more second organic EL medium layers over a second array of bottom electrodes. After removal of the second undercut lift-off structure, a common top electrode is provided in electrical contact with the first and second organic EL medium layers.

A display device includes a window, a display panel arranged below the window and including a display area and a peripheral area outside the display area; and a component arranged below the display panel and at least partially overlapping the peripheral area, wherein a black matrix is arranged on a bottom surface of the window in correspondence with an area in the peripheral area other than an area where the component is located.

The present invention relates to the compounds of the formulae (1) and (2) and to organic electroluminescent devices, in particular blue-emitting devices, in which these compounds are used as host material or dopant in the emitting layer and/or as hole-transport material and/or as electron-transport material. ##STR00001##

The present invention relates to an organic electroluminescent device comprising a first electrode, at least one second electrode, at least one emission layer and at least one electron transport region, wherein the emission layer and the electron transport region are arranged between the at least one second electrode and the first and the electron transport region is arranged between the emission layer and the at least one second electrode, wherein the at least one electron transport region comprises a first electron transport layer, the first electron transport layer preferably not comprising an n-type dopant; and a performance enhancement layer, the performance enhancement layer having a refractive index of ≤1.6 at a wavelength of 1,200 nm; wherein the first electron transport layer is arranged between the emission layer and the performance enhancement layer; and the performance enhancement layer is arranged between the first electron transport layer and the at least one second electrode.

An organic light emitting transistor and a manufacturing method thereof, a display panel and an electronic device are provided, and the organic light emitting transistor includes a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode; the active layer includes a two-dimensional semiconductor material layer and an organic light emitting layer, the two-dimensional semiconductor material layer and the organic light emitting layer are stacked to form a heterojunction, and the heterojunction is a heterotype heterojunction.