Embodiments of the present disclosure provide an organic light emitting transistor comprising: a substrate, and a gate electrode, a gate insulating layer, source/drain electrodes and a light emitting functional layer disposed on the substrate, wherein the organic light emitting transistor further comprises an external electrode coupled to the gate electrode in series, wherein a temperature-dependent resistance change rate of the gate electrode is different from a temperature-dependent resistance change rate of the external electrode.

A method for fabricating an array substrate, a display panel, and a display device is provided. The array substrate is divided into a plurality of pixel regions, and each of the pixel regions is provided with a pixel thin film transistor (TFT). At least one of the pixel regions is provided with a pressure component and a force TFT, the force TFT includes a first electrode, a second electrode and a control electrode, and the pressure component is connected to one of the first electrode and the control electrode of the force TFT. At least one of layer structures of the pixel TFT is disposed in the same layer as a corresponding layer structure of the force TFT.

A display device including a substrate, a first transistor, a second transistor, and a first capacitor electrode is provided. The first transistor is disposed above the substrate and includes a first semiconductor layer, a first gate electrode, and a first gate insulator layer. The first semiconductor layer includes a silicon semiconductor layer. The first gate electrode overlaps the first semiconductor layer. The first gate insulator layer is disposed between the first semiconductor layer and the first gate electrode. The second transistor is disposed above the substrate and includes a second semiconductor layer and a second gate electrode. The second semiconductor layer includes an oxide semiconductor layer. The second gate electrode overlaps the second semiconductor layer. The first capacitor electrode overlaps the second gate electrode. The first gate insulator is disposed above the first capacitor electrode.

Provided is a method of driving a light emitting a display in which variations in image quality and brightness are suppressed despite long-term use, without adding a complicated circuit configuration. The driving a light emitting method includes a step (A) of applying a voltage based on image data to be displayed to a gate electrode of a vertical organic light emitting transistor and a step (B) of, after the step (A), applying a voltage, having a polarity opposite to that of the voltage applied to the gate electrode of the vertical organic light emitting transistor in the step (A), to the gate electrode of the vertical organic light emitting transistor based on a value of a voltage being applied to a source electrode of the vertical organic light emitting transistor.

Provided is a method of compensating brightness of a display using a vertical organic light emitting transistor that suppresses variations in brightness over a long period of time and a display. This method is a method of compensating brightness of a display including a plurality of vertical organic light emitting transistors and a memory that stores characteristic information of the vertical organic light emitting transistor. This method includes a step (A) of applying a voltage for brightness inspection to a gate electrode of the vertical organic light emitting transistor to be corrected, a step (B) of measuring a current flowing through a current supply line through which the current is supplied to a source electrode of the vertical organic light emitting transistor by the application of the voltage for brightness inspection to the gate electrode of the vertical organic light emitting transistor to be corrected, and a step (C) of determining a corrected value of the voltage to be applied to the gate electrode of the vertical organic light emitting transistor based on a value of the current measured in the step (B) and the characteristic information of the vertical organic light emitting transistor stored in the memory.

A display panel includes a switching transistor and a light-emitting transistor. The switching transistor includes a first gate electrode, a first source electrode, a first active layer, and a first drain electrode. The light-emitting transistor includes a second gate electrode, a second source electrode, a second active layer, a light-emitting layer, and a second drain electrode. The second gate electrode is the first drain electrode of the switching transistor. The switching transistor and the light-emitting transistor may be on a substrate. The switching transistor, the second source electrode, the second active layer, the light-emitting layer, and the second drain electrode are stacked in a direction perpendicular to the surface of the substrate.

An organic electroluminescence element in an embodiment according to the present invention includes a first electrode, a third electrode including a region overlapping the first electrode, a first insulating layer between the first electrode and the third electrode, a second insulating layer between the first insulating layer and the third electrode, an electron transfer layer between the first insulating layer and the third electrode, a light emitting layer, containing an organic electroluminescence material, between the electron transfer layer and the third electrode, and a second electrode located between the first insulating layer and the second insulating layer and electrically connected with the electron transfer layer. The organic electroluminescence element includes an overlap region where the third electrode, the light emitting layer, the electron transfer layer, the first insulating layer and the first electrode overlap each other in an opening of the second insulating layer.

In example implementations, an organic light emitting transistor is provided. The organic light emitting transistor includes a substrate, at least one layer deposited onto the substrate, a thin film transistor, and an organic light emitting transistor. The thin film transistor is formed on the substrate to include a first portion of the at least one layer and the organic light emitting transistor is formed on the substrate to include a second portion of the at least one layer.

A semiconductor device package includes a display device, an electronic module and a conductive adhesion layer. The display device includes a first substrate and a TFT layer. The first substrate has a first surface and a second surface opposite to the first surface. The TFT layer is disposed on the first surface of the first substrate. The electronic module includes a second substrate and an electronic component. The second substrate has a first surface facing the second surface of the first substrate and a second surface opposite to the first surface. The electronic component is disposed on the second surface of the second substrate. The conductive adhesion layer is disposed between the first substrate and the second substrate.

A display panel includes a switching transistor and a light-emitting transistor. The switching transistor includes a first gate electrode, a first source electrode, a first active layer, and a first drain electrode. The light-emitting transistor includes a second gate electrode, a second source electrode, a second active layer, a light-emitting layer, and a second drain electrode. The second gate electrode is the first drain electrode of the switching transistor. The switching transistor and the light-emitting transistor may be on a substrate. The switching transistor, the second source electrode, the second active layer, the light-emitting layer, and the second drain electrode are stacked in a direction perpendicular to the surface of the substrate.