A method comprising: providing a substrate comprising one or more electronic structures; providing a layer of perovskite overlaying the one or more electronic structures; coating a layer of photoresist material overlaying the layer of perovskite; aligning a mask with the one or more electronic structures and patterning the photoresist material; and using the same etchant to remove sections of the patterned photoresist material and the perovskite underneath the sections of the photoresist material.

A electroluminescence display device includes a pixel including a selection transistor, a driving transistor, and an EL element, a scanning signal line electrically connected with a gate of the selection transistor, a data signal line electrically connected with a source of the selection transistor, and a carrier injection amount control signal line applying a voltage to the EL element. The EL element includes a first electrode, a third electrode, a first insulating layer between the first electrode and the third electrode, an electron transfer layer between the first insulating layer and the third electrode, a light emitting layer containing an electroluminescence material between the electron transfer layer and the third electrode, and a second electrode located outer to a region where the first electrode, the first insulating layer, the electron transfer layer and the third electrode overlap each other, the second electrode being in contact with the electron transfer layer.

A display panel is disclosed. The display panel includes: a base substrate; a gate electrode on the base substrate; an active layer spaced apart from the gate electrode by a gate insulating layer; a light emitting layer disposed on a side of the active layer away from the gate electrode; and a source electrode and a drain electrode, configured in such a way that a current is allowed to flow through the light emitting layer via the active layer, wherein an energy level transition layer is provided between the active layer and the light emitting layer.

A display device includes a pixel electrode layer in which a plurality of light emitting elements constituting respective pixels are arranged in two dimensions; a touch sensor layer in which a plurality of touch sensor electrodes constituting a touch sensor are arranged in two dimensions; and a touch buffer layer between the pixel electrode layer and the touch sensor layer such that the pixel electrode layer and the touch sensor layer are capacitively coupled to each other, the touch buffer layer being optically transparent and including a base material and hollow particles dispersed in the base material.

Methods for producing and integrating single-walled carbon nanotubes (SWCNT) into existing TFT backplane manufacturing lines are provided. In contrast to LTPS and oxide TFT backplanes, SWCNT TFT backplanes exhibit either equivalent or better figures of merit such as high field emission mobility, low temperature fabrication, good stability, uniformity, scalability, flexibility, transparency, mechanical deformability, low voltage and low power, bendability and low cost. Methods and processes for integrating SWCNTs technologies into existing TFT backplane manufacturing lines, pilot test and mass production can start without additional capex needs are also provided.

A hybrid organic-inorganic conductive thin film comprising an organic layer and a plurality of inorganic particles is disclosed, wherein the plurality of inorganic particles comprises a plurality of Cu particles that have an average particle size in a range between 20 nm and 45 nm. This hybrid organic-inorganic conductive thin film is allowed to be used as a hole injection layer (HIL) or a hole transport layer (HTL), so as to be applied in the manufacture of QLED element, OLED element, organic photovoltaic element, hybrid inorganic-organic photovoltaic element, O-FET, O-TFT, or photoreceptor. Moreover, experiment data have proved that, compared to the regular OLED element, the OLED element having the HIL made of the hybrid organic-inorganic conductive thin film has a significant enhancement in device efficiency.

A method of making an OLED device includes providing a first undercut lift-off structure over the device substrate having a first array of bottom electrodes. Next, one or more first organic EL medium layers including at least a first light-emitting layer are deposited over the first undercut lift-off structure and over the first array of bottom electrodes. The first undercut lift-off structure and overlying first organic EL medium layer(s) are removed by treatment with a first lift-off agent comprising a fluorinated solvent to form a first intermediate structure. The process is repeated using a second undercut lift-off structure to deposit one or more second organic EL medium layers over a second array of bottom electrodes. After removal of the second undercut lift-off structure, a common top electrode is provided in electrical contact with the first and second organic EL medium layers.

The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.

A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.