Provided are an organic electroluminescent device, a display panel, and a display apparatus. An exciton layer adjacent to a light-emitting layer is added, and the exciton layer serves as an exciton recombination region and achieves the effect of increasing the density of excitons, where the singlet-state energy level of the exciton layer is higher than the singlet-state energy level of a host material in the light-emitting layer, and an emission spectrum of the exciton layer and an absorption spectrum of the host material in the light-emitting layer have an overlapping area. Moreover, the exciton layer allows triplet-state excitons formed in the exciton layer to form singlet-state excitons via a reverse intersystem crossing process.

Disclosed is a flexible display substrate, including: a substrate base layer, peripheral side edges of the substrate base layer having a first stepped structure having a process performance, the first stepped structure being configured to enable a film layer covering the first stepped structure to be easily broken at the stepped structure when a force is applied; a functional layer provided on the substrate base layer and exposed to the outside of the first stepped structure; and an inorganic encapsulation layer covering side edges of the functional layer and extending to the first stepped structure of the side edges of the substrate base layer.

The present disclosure discloses a flexible substrate, a method of manufacturing the same, and a display device. The flexible substrate includes a plurality of substrate structure layers that are superimposed, and at least one of the plurality of substrate structure layers includes an organic layer, an inorganic layer and a photonic crystal layer that are superimposed.

A display device includes: a base layer including a display area (DA) and a non-DA; a circuit element layer on the base layer and including: a power supply electrode (PSE) overlapping the non-DA, circuit elements, and a shielding electrode connected to the PSE and overlapping some of the circuit elements; a display element layer on the circuit element layer and including: a light emitting element including a first electrode, a light emitting unit, and a second electrode, and a connection electrode connecting the second electrode to the PSE and including first through-holes; a thin film encapsulation layer (TFEL) on the display element layer and including an organic layer overlapping the DA; and an input sensing layer on the TFEL and including sensing electrodes and sensing signal lines connected to the sensing electrodes. The sensing signal lines overlap the connection electrode. Some of the first through-holes overlap the shielding electrode.

A display device includes a base substrate; an oxide semiconductor layer disposed on the base substrate; a first gate insulating layer disposed on a first channel region of the oxide semiconductor layer and that overlaps the first channel region thereof; a first upper gate electrode disposed on the first gate insulating layer ; and an upper interlayer insulating layer disposed on the first upper gate electrode, the first upper gate electrode, and the oxide semiconductor layer, wherein the upper interlayer insulating layer includes a first upper interlayer insulating layer, a second upper interlayer insulating layer, and a third upper interlayer insulating layer, the first upper interlayer insulating layer includes silicon oxide, each of the second and third upper interlayer insulating layers include silicon nitride, and a hydrogen concentration in the second upper interlayer insulating layer is less than a hydrogen concentration in the third upper interlayer insulating layer.

Provided are a light-emitting device, a manufacturing method thereof and an electronic apparatus including the same, the light-emitting device including: a first electrode; a second electrode facing the first electrode; a middle region including an emission layer between the first electrode and the second electrode and an electron transport region between the second electrode and the emission layer; and an anti-oxidation layer between the second electrode and the electron transport region. The electron transport region includes an inorganic electron transport layer that comprises a metal oxide layer including a metal oxide.

Provided are a light-emitting device, a manufacturing method thereof and an electronic apparatus including the same, the light-emitting device including: a first electrode; a second electrode facing the first electrode; a middle region including an emission layer between the first electrode and the second electrode and an electron transport region between the second electrode and the emission layer; and an anti-oxidation layer between the second electrode and the electron transport region. The electron transport region includes an inorganic electron transport layer that comprises a metal oxide layer including a metal oxide.

An organometallic compound represented by Formula 1:

M.sub.1(Ln.sub.1).sub.n1(Ln.sub.2).sub.n2  Formula 1

wherein M.sub.1 is a transition metal, Ln.sub.1 is a ligand represented by Formula 1A, Ln.sub.2 is a ligand represented by Formula 1B, n1 is 1 or 2, and n2 is 1 or 2:

##STR00001##

wherein ring CY.sub.1, ring CY.sub.2, ring CY.sub.3, X.sub.1, X.sub.2, X.sub.41, X.sub.42, R.sub.1 to R.sub.6, R.sub.10, R.sub.20, R.sub.30, R.sub.40, b10, b20, b30, and b40 are as described in the detailed description, and * and *′ each indicate a binding site to M.sub.1.

An organometallic compound represented by Formula 1:

M.sub.1(Ln.sub.1).sub.n1(Ln.sub.2).sub.n2  Formula 1

wherein M.sub.1 is a transition metal, Ln.sub.1 is a ligand represented by Formula 1A, Ln.sub.2 is a ligand represented by Formula 1B, n1 is 1 or 2, and n2 is 1 or 2:

##STR00001##

wherein ring CY.sub.1, ring CY.sub.2, ring CY.sub.3, X.sub.1, X.sub.2, X.sub.41, X.sub.42, R.sub.1 to R.sub.6, R.sub.10, R.sub.20, R.sub.30, R.sub.40, b10, b20, b30, and b40 are as described in the detailed description, and * and *′ each indicate a binding site to M.sub.1.

The present disclosure relates to a method of manufacturing an array substrate. The method of manufacturing an array substrate may include forming a main via hole in a substrate, filling a first conductive material in the main via hole, and forming a pixel circuit layer on a first surface of the substrate. The pixel circuit layer may include a first via hole. An orthographic projection of the first via hole on the substrate may at least partially overlap the corresponding main via hole.