The present invention relates to a color conversion device (100).

The present invention relates to a metal complex and application thereof. The metal complex has a general formula of Ir(La)(Lb)(Lc), and includes a structure as shown in the following formula (1) as a ligand La. The metal complex provided in the present invention has the advantages of high optical and electrical stability, high luminescence efficiency, long service life, and high color saturation, and can be used in organic light-emitting devices. In particular, the metal complex has the potential for application in the AMOLED industry as a red light-emitting phosphorescent material.

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The present invention relates to a metal complex and application thereof. The metal complex has a general formula of Ir(La)(Lb)(Lc), and includes a structure as shown in the following formula (1) as a ligand La. The metal complex provided in the present invention has the advantages of high optical and electrical stability, high luminescence efficiency, long service life, and high color saturation, and can be used in organic light-emitting devices. In particular, the metal complex has the potential for application in the AMOLED industry as a red light-emitting phosphorescent material.

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An electronic device includes a display panel including a base layer, a circuit element layer including a buffer layer, a transistor, at least one insulating layer on the buffer layer, and a first metal pattern on the at least one insulating layer and overlapping the margin area, a display element layer including an organic layer between a first electrode and a second electrode, and a light emitting device overlapping a pixel area, wherein an electrode opening corresponding to the margin area is defined in the second electrode, and an encapsulation layer on the display element layer. An insulation opening is defined to be overlapped between an edge of the second electrode defined an electrode opening and the first metal pattern in the at least one insulating layer, and exposes a portion of the buffer layer.

An electronic device includes a display panel including a base layer, a circuit element layer including a buffer layer, a transistor, at least one insulating layer on the buffer layer, and a first metal pattern on the at least one insulating layer and overlapping the margin area, a display element layer including an organic layer between a first electrode and a second electrode, and a light emitting device overlapping a pixel area, wherein an electrode opening corresponding to the margin area is defined in the second electrode, and an encapsulation layer on the display element layer. An insulation opening is defined to be overlapped between an edge of the second electrode defined an electrode opening and the first metal pattern in the at least one insulating layer, and exposes a portion of the buffer layer.

A proximity sensing device which is disposed under the OLED panel and has an emitting module and a receiving module, is provided. The emitting module can emit an invisible light which has a peak wavelength not less than 1000 nm. The receiving module is disposed adjacent to the emitting module and can receive a reflecting light from the reflected invisible light. Therefore, the invisible light passing through the OLED panel will not cause a bright spot on the panel.

A display apparatus includes a display area and a sub-display area. The display area includes a central display area and a plurality of edge display areas. Each of the plurality of edge display areas extends curved from the central display area. The sub-display area is disposed between adjacent edge display areas. Light is emitted at the sub-display area, and the color of the light emitted at the sub-display area is identical or similar to that of light emitted from a portion of the display area adjacent to the sub-display area.

A hybrid light emitting diode (LED) display and fabrication method are provided. The method forms a stack of thin-film layers overlying a top surface of a substrate. The stack includes an LED control matrix and a plurality of pixels. Each pixel is made up of a first subpixel enabled using an inorganic micro LED (uLED), a second subpixel enabled using an organic LED (OLED), and a third subpixel enabled using an OLED. The first subpixel emits a blue color light, the second subpixel emits a red color light, and the third subpixel emits a green color light. In one aspect, the stack includes a plurality of wells in a top surface of the stack, populated by the LEDs. The uLEDs may be configured vertical structures with top and bottom electrical contacts, or surface mount top surface contacts. The uLEDs may also include posts for fluidic assembly orientation.

A proximity sensing device which is disposed under the OLED panel and has an emitting module and a receiving module, is provided. The emitting module can emit an invisible light which has a peak wavelength not less than 1000 nm. The receiving module is disposed adjacent to the emitting module and can receive a reflecting light from the reflected invisible light. Therefore, the invisible light passing through the OLED panel will not cause a bright spot on the panel.

The present invention provides an organic light-emitting diode (OLED) display panel and a display device. The OLED display panel includes a light-emitting device layer and a color conversion layer arranged in sequence. The light-emitting device layer includes a third light-emitting device disposed in a region of a green subpixel. The color conversion layer includes a green conversion layer disposed in the region of the green subpixel. The green conversion layer is configured to convert light emitted by the third light-emitting device into green light to relieve a problem of a short display lifespan of current OLED display panels.