According to one embodiment, a processing substrate is prepared. An organic layer is formed. An etching stopper layer is formed. The forming the etching stopper layer includes, in a first mode, inclining an evaporation source, and depositing a material emitted from the evaporation source while relative positions of the evaporation source and the processing substrate are changed, and in a second mode, inclining the evaporation source in a manner different from the first mode, and depositing the material emitted from the evaporation source while the relative positions of the evaporation source and the processing substrate are changed in an opposite manner of the first mode.

Provided are a quantum dot light-emitting device, a display apparatus and a manufacturing method The quantum dot light-emitting device includes: a light-emitting layer group of a first and second quantum dot light-emitting layers arranged in a laminated manner, the chain length of a first ligand is greater than that of a second ligand, the difference between two chain lengths is greater than a first preset value; the difference between the number of carriers arriving at the light-emitting layer group from a first electrode layer and the number of carriers arriving at the light-emitting layer group from a second electrode layer is greater than a second preset value; the side of the light-emitting layer group with the largest number of entering carriers is used as a multi-carrier entry side; the first quantum dot light-emitting layer is on the surface of the second quantum dot light-emitting layer facing the multi-carrier entry side.

Provided are a quantum dot light-emitting device, a display apparatus and a manufacturing method The quantum dot light-emitting device includes: a light-emitting layer group of a first and second quantum dot light-emitting layers arranged in a laminated manner, the chain length of a first ligand is greater than that of a second ligand, the difference between two chain lengths is greater than a first preset value; the difference between the number of carriers arriving at the light-emitting layer group from a first electrode layer and the number of carriers arriving at the light-emitting layer group from a second electrode layer is greater than a second preset value; the side of the light-emitting layer group with the largest number of entering carriers is used as a multi-carrier entry side; the first quantum dot light-emitting layer is on the surface of the second quantum dot light-emitting layer facing the multi-carrier entry side.

An encapsulation method of a display panel, a display panel and a display device are disclosed. The encapsulation method of the display panel includes: forming at least one thin film encapsulation inorganic material layer on a thin film encapsulation region of a display substrate; forming a photoresist pattern on the at least one thin film encapsulation inorganic material layer; and etching the at least one thin film encapsulation inorganic material layer by using the photoresist pattern as a mask to form a thin film encapsulation inorganic layer including a first opening pattern.

A method for manufacturing a mask includes providing a mask mother substrate including a first portion and a plurality of second portions adjacent to the first portion, forming a reflecting plate on the mask mother substrate, forming a photoresist layer on the reflecting plate, removing a third portion of the photoresist layer that overlaps the plurality of second portions using an auxiliary mask, removing a fourth portion of the reflecting plate that overlaps the plurality of second portions, and removing the plurality of second portions of the mask mother substrate using a laser.

A composition which is useful for production of a light emitting device of which initial deterioration is suppressed, and a light emitting device formed using the composition, are provided. The composition contains a host material and a guest material blended therein. The host material contains an aromatic compound having a condensed ring skeleton in which only three or more benzene rings are condensed. The guest material contains an aromatic amine compound. The total amount of sodium atoms contained in the host material and sodium atoms contained in the guest material is 400 ppb by mass or less with respect to the total amount of the host material and the guest material.

A memory device includes a bottom electrode, an insulating layer, and a top electrode. The bottom electrode includes a plurality of carbon nanotubes. The insulating layer is disposed over the plurality of carbon nanotubes. The top electrode includes a graphene layer separated from the plurality of carbon nanotubes by the insulating layer.

The present disclosure relates to a method that includes applying a first perovskite precursor solution to a substrate to form a first liquid film of the first perovskite precursor solution on the substrate; from the first liquid film, forming a first intermediate solid perovskite layer on the substrate; repeating at least once, both the applying and the forming, resulting in the creation of at least one additional intermediate solid perovskite layer; and treating a last intermediate solid perovskite layer, resulting from the at least one additional applying and the at least one additional forming, to create a final solid perovskite layer.

In a method, a charged metal dot is deposited on a first position of a surface of a semiconductor substrate. Then, a charged region is formed on a second position of the surface of the semiconductor substrate, thereby establishing of which an electric field direction from the first position toward the second position. The first position is spaced apart from the second position by a distance. Thereafter, a precursor gas flows along the electric field direction on the semiconductor substrate, thereby forming a carbon nanotube (CNT) on the semiconductor substrate.

A method of forming a memory device includes the following steps. A plurality of carbon nanotubes are formed over a substrate as a first electrode. An insulating layer is formed over the carbon nanotubes. A graphene is formed over the insulating layer as a second electrode separated from the first electrode by the insulating layer.