The present disclosure provides a nitrogen-containing heterocyclic compound having a general formula (I) and an organic photoelectric apparatus thereof. The general formula (I) is ##STR00001## wherein A.sub.1, A.sub.2, A.sub.3, A.sub.4, A.sub.5, A.sub.6, A.sub.7, A.sub.8, A.sub.9, and A.sub.10 are independently selected from a hydrogen atom, at least one compound having the general formula (II) and at least one compound having a general formula (III), ##STR00002## wherein Y.sub.1, Y.sub.2, and Y.sub.3 are independently selected from C and N; and R.sub.3 and R.sub.4 are independently selected from C.sub.6-30 aromatic group and C.sub.2-30 heterocyclic aromatic group, ##STR00003## wherein X is selected from oxyl group, sulfenyl group, substituted or non-substituted imino group, substituted or non-substituted methylene group, and substituted or non-substituted silicylene group, and R.sub.5, R.sub.6, R.sub.7, R.sub.8, R.sub.9, R.sub.10, R.sub.11, and R.sub.12 are independently selected from hydrogen, deuterium, C.sub.1-30 alkyl group, C.sub.6-30 aromatic group, and C.sub.2-30 heterocyclic aromatic group.

A composition is provided in which a phosphorescent compound represented by formula (1) and a host material are blended with each other. The amount of chlorine atoms contained as impurities in the phosphorescent compound is 3.5 ppm by mass or less with respect to the total amount of solid contents blended in the composition.

##STR00001##

In Formula (1), M.sup.1 represents an iridium atom; n.sup.1 represents an integer of 1 or more, n.sup.2 represents an integer of 0 or more, n.sup.1+n.sup.2 is 2 or 3; E.sup.1 and E.sup.2 represent a carbon atom or a nitrogen atom; R.sup.1 ring represents a 5-membered aromatic heterocyclic ring and R.sup.2 ring represents an aromatic hydrocarbon ring; A.sup.1-G.sup.1-A.sup.2 represents an anionic bidentate ligand; A.sup.1 and A.sup.2 represent a nitrogen atom; and G.sup.1 represents a single bond.

Provided are P-type semiconductor layer, P-type multilevel element, and manufacturing method for the element. The P-type multilevel element comprises a gate electrode, an active structure overlapping the gate electrode, a gate insulating layer disposed between the gate electrode and the active structure, and source and drain electrodes electrically connected to both ends of the active structure, respectively. The active structure has a first P-type active layer, a second P-type active layer, and a barrier layer disposed between the first P-type active layer and the second P-type active layer. A threshold voltage for forming a channel in the first P-type active layer and a threshold voltage for forming a channel in the second P-type active layer have different values.

A flexible display panel and a display device are provided. The flexible display panel includes a flexible base and an organic light emitting diode layer. The organic light emitting diode layer is disposed on the flexible base, and the organic light emitting diode layer includes a plurality of sub-pixels disposed at intervals. Hardened blocks are disposed in the organic light emitting diode layer, and the hardened blocks are respectively disposed in the intervals of the sub-pixels spaced apart.

A method of forming a hybrid nanostructure on graphene, the method including providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure.

Provided are methods, systems, and apparatuses providing flexible conductive substrates for nanomaterial/perovskite-based optoelectronic devices. One such apparatus may include a flexible conductive substrate, a nanomaterial layer disposed on the flexible conductive substrate, and a perovskite layer disposed on the nanomaterial layer. The flexible conductive substrate may be a cost-effective metal sheet such as a stainless steel sheet or an aluminum sheet. The nanomaterial layer may comprise semiconductor or oxide nanorods, nanowires, nanotubes, or nanoparticles, such as gadolinium-doped zinc oxide nanorods. The perovskite layer may comprise inorganic or organic perovskite. The apparatus may further include an optically transparent conductive layer disposed on the perovskite layer. Optionally, the apparatus may include an electrical contact disposed on a portion of the optically transparent conductive layer.

The present invention relates to a composition comprising a bipolar host and an electron-transporting host, especially for use as matrix material in electronic devices, especially organic electroluminescent devices, and especially in an organic light-emitting diode (OLED). The invention further relates to electronic devices comprising said composition.

Semiconductor devices, and more particularly arrangements of fluorinated polymers with low dielectric loss for environmental protection in semiconductor devices are disclosed. Arrangements include conformal coatings or layers of fluorinated polymers that cover a semiconductor die on a package substrate of a semiconductor device. Such fluorinated polymer arrangements may also conformally coat various electrical connections for the semiconductor die, including wire bonds. Fluorinated polymers with low dielectric constants and low moisture permeability may thereby provide reduced moisture ingress in semiconductor devices while also reducing the impact of associated dielectric loss.

Semiconductor devices, and more particularly arrangements of fluorinated polymers with low dielectric loss for environmental protection in semiconductor devices are disclosed. Arrangements include conformal coatings or layers of fluorinated polymers that cover a semiconductor die on a package substrate of a semiconductor device. Such fluorinated polymer arrangements may also conformally coat various electrical connections for the semiconductor die, including wire bonds. Fluorinated polymers with low dielectric constants and low moisture permeability may thereby provide reduced moisture ingress in semiconductor devices while also reducing the impact of associated dielectric loss.

Light emitting devices are provided that include an outcoupling layer in which asymmetric nanoparticles are disposed, where the nanoparticles are aligned such that the difference between each nanoparticle's major axis and the average direction of the major axes of all nanoparticles is minimized. The use of aligned, physically asymmetric nanoparticles leads to improved outcoupling and performance of the device.