Patent classifications
H10K71/10
ORGANIC SEMICONDUCTOR PHOTOVOLTAIC DEVICES AND COMPOSITIONS WITH ACCEPTOR-DONOR-ACCEPTOR TYPE POLYMER ELECTRON DONORS
Organic semiconductor photovoltaic devices and compositions with acceptor-donor-acceptor type polymer electron donors are provided. In one embodiment, a composition of matter comprises a copolymer material having an acceptor-donor-acceptor moiety repeat unit.
MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF LIGHT-EMITTING ELEMENT
Disclosed is a manufacturing apparatus of a light-emitting element. The manufacturing apparatus includes: a main transporting route including a first transfer device and a second transfer device connected to each other through a first transporting chamber; a sub-transporting route extending in a direction intersecting the main transporting route, the sub-transporting route including: a second transporting chamber connected to the first transfer device or the second transfer device; and a delivery chamber connected to the second transporting chamber; and a plurality of treatment chambers connected to the delivery chamber. A region to which the first transfer device, the second transfer device, the first transporting chamber, and the second transporting chamber are connected is under a continuous vacuum environment.
Systems and methods for single-molecule nucleic-acid assay platforms
Integrated circuits for a single-molecule nucleic-acid assay platform, and methods for making such circuits are disclosed. In one example, a method includes transferring one or more carbon nanotubes to a complementary metal-oxide semiconductor (CMOS) substrate, and forming a pair of post-processed electrodes on the substrate proximate opposing ends of the one or more carbon nanotubes.
METHOD AND DEVICE FOR USING AN ORGANIC UNDERLAYER TO ENABLE CRYSTALLIZATION OF DISORDERED ORGANIC THIN FILMS
Measurements on organic single crystals reveal remarkable optical and electrical characteristics compared to disordered films but practical device applications require uniform, pinhole-free films. Disclosed herein is a process to reliably convert as-deposited amorphous thin films to ones that are highly crystalline, with grains on the order of hundreds of microns. The disclosed method results in films that are pinhole-free and that possess grains that individually are single crystal domains.
Organic Light Emitting Diode Comprising an Organic Semiconductor Layer
The present invention relates to organic light-emitting diodes that include an anode electrode, a transparent cathode electrode, at least one emission layer and at least one organic semiconductor layer, wherein the at least one emission layer and the at least one organic semiconductor layer is arranged between the anode electrode and the transparent cathode electrode and the organic semiconductor layer includes a first zero-valent metal dopant and a first matrix compound wherein the first matrix comprising at least two phenanthrolinyl groups as well as to a method for manufacturing the same.
Method for single crystal growth of photovoltaic perovskite material and devices
Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.
Method of making N-type thin film transistor
A method of making N-type semiconductor layer includes following steps. An insulating substrate is provided. A semiconductor carbon nanotube layer is formed on the insulating substrate. An MgO layer is deposited on the semiconductor carbon nanotube layer. A functional dielectric layer is located on the MgO layer. A source electrode and drain electrode are formed to electrically connect the semiconductor carbon nanotube layer. A gate electrode is formed on the functional dielectric layer.
HIGH EFFICIENCY VAPOR TRANSPORT SUBLIMATION SOURCE USING BAFFLES COATED WITH SOURCE MATERIAL
A source of material for use in a deposition system includes one or more baffles or equivalent structures within the source. The baffles provide for increased concentration of material entrained in a carrier gas that is passed through and emitted by the source.
Organic material deposition apparatus, and organic material deposition method using same
An apparatus for depositing an organic material includes: a main chamber; a first substrate loading section in which a first substrate is loaded in the first radial direction and seated; a second substrate loading section in which a second substrate is loaded in the second radial direction and seated; a scanner including a linear organic material deposition source, a source moving means to which the organic material deposition source is coupled to linearly move the organic material deposition source so that the organic material particles are injected onto the surface of the first substrate or the second substrate, and a rotating means for rotating the source moving means; and a scanner moving means for moving the scanner back and forth so that the scanner is positioned in the first deposition region or the second deposition region.
P-type semiconducting polymers and related methods
There is provided p-type organic polymers of general formula I. The polymers may be useful as semi-conducting material. Thus, thin films and devices comprising such polymers are also provided.