H10K71/10

LIGHT-EMITTING DEVICE AND METHOD OF PRODUCING LIGHT-EMITTING DEVICE
20230263000 · 2023-08-17 ·

A light-emitting device includes a first light-emitting region in which a light emission peak wavelength is a first wavelength; a second light-emitting region in which a light emission peak wavelength is a second wavelength shorter than the first wavelength; a cathode disposed in the first light-emitting region and the second light-emitting region; an anode facing the cathode in the first light-emitting region and the second light-emitting region; a second light-emitting layer disposed between the cathode and the anode in the first light-emitting region and the second light-emitting region and having a light emission peak wavelength being the second wavelength; a first light-emitting layer disposed between the anode and the second light-emitting layer at least in the first light-emitting region and having a light emission peak wavelength being the first wavelength; and a first electron transport layer disposed between the first light-emitting layer and the second light-emitting layer in the first light-emitting region and having ionization energy higher than both of ionization energy of the first light-emitting layer and ionization energy of the second light-emitting layer.

Display model, manufacturing method thereof, and electronic device
11329252 · 2022-05-10 ·

A display module, a method of manufacturing the display module, and an electronic device include an array substrate, a light-emitting device layer, a thin film encapsulation layer, a touch layer, a polarizer layer, and a cover layer. The polarizer layer and the cover layer are formed on the light-emitting device layer through a deposition process.

PROFILING AND LAMINATING DEVICE, PROFILING AND LAMINATING METHOD, DISPLAY MODULE, AND DISPLAY DEVICE

A profiling and laminating device includes: a fixture, a carrier film, a first driving assembly and a second driving assembly. The fixture includes a first main surface, a curved transition surface and a second main surface that are connected in sequence, and the first main surface and the second main surface are located on two opposite sides of the fixture, respectively. A surface of the carrier film is used for carrying a flexible display panel, and another surface of the carrier film is used for covering at least the first main surface and the second main surface of the fixture. The first driving assembly is used for driving the fixture to move. The second driving assembly is used for driving the carrier film to move.

Organic light-emitting device and display apparatus including the same

An organic light-emitting device includes: a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer comprises an emission layer, a mixed layer, and a hole transport region, the hole transport region is between the emission layer and the first electrode, the mixed layer is between the hole transport region and the emission layer, and comprises a first compound and a second compound, the first compound comprises an anthracene-based compound represented by Formula 1, and the second compound comprises an amine-based compound represented by Formula 2. A display apparatus includes the organic light-emitting device.

Mask and method of manufacturing mask

A method for manufacturing a mask includes providing a mask mother substrate including a first portion and a plurality of second portions adjacent to the first portion, forming a reflecting plate on the mask mother substrate, forming a photoresist layer on the reflecting plate, removing a third portion of the photoresist layer that overlaps the plurality of second portions using an auxiliary mask, removing a fourth portion of the reflecting plate that overlaps the plurality of second portions, and removing the plurality of second portions of the mask mother substrate using a laser.

VAPOR DEPOSITION SOURCE AND METHOD FOR MAKING ORGANIC LIGHT-EMITTING DIODE DISPLAY PANEL
20220123212 · 2022-04-21 ·

A source to facilitate precise vapor deposition in processes to obtain organic light emitting diodes (OLEDs) in a display panel, includes forming a plurality of grooves on a first substrate; in filling organic light emitting materials into the grooves and providing a second substrate to receive the vaporized organic light emitting materials. The first substrate is aligned with the second substrate and the first substrate is heated to vaporize the organic light emitting materials in the grooves. The vapor deposition regions of the second substrate form an organic light emitting material layer after the deposition, the layer can then be used in an OLED display panel. The shadow effect is greatly reduced, a method for the procedure is also disclosed.

FLUORINATED POLYMERS WITH LOW DIELECTRIC LOSS FOR ENVIRONMENTAL PROTECTION IN SEMICONDUCTOR DEVICES

Semiconductor devices, and more particularly arrangements of fluorinated polymers with low dielectric loss for environmental protection in semiconductor devices are disclosed. Arrangements include conformal coatings or layers of fluorinated polymers that cover a semiconductor die on a package substrate of a semiconductor device. Such fluorinated polymer arrangements may also conformally coat various electrical connections for the semiconductor die, including wire bonds. Fluorinated polymers with low dielectric constants and low moisture permeability may thereby provide reduced moisture ingress in semiconductor devices while also reducing the impact of associated dielectric loss.

MEMRISTOR DEVICE, METHOD OF FABRICATING THE SAME, SYNAPTIC DEVICE INCLUDING THE SAME, AND NEUROMORPHIC DEVICE INCLUDING THE SYNAPTIC DEVICE
20230309327 · 2023-09-28 ·

A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al.sub.2O.sub.3 layer. The insertion layer includes an Al.sub.2O.sub.3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200° C. or higher.

MEMRISTOR DEVICE, METHOD OF FABRICATING THE SAME, SYNAPTIC DEVICE INCLUDING THE SAME, AND NEUROMORPHIC DEVICE INCLUDING THE SYNAPTIC DEVICE
20230309327 · 2023-09-28 ·

A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al.sub.2O.sub.3 layer. The insertion layer includes an Al.sub.2O.sub.3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200° C. or higher.

ORGANIC MOLECULES FOR OPTOELECTRONIC DEVICES
20230303595 · 2023-09-28 ·

The invention relates to an organic molecule for optoelectronic devices. According to the invention, the organic molecule has: —a first chemical moiety with a structure of formula (I), —two second chemical moieties with a structure of formula (II), wherein X and Y are at each occurrence independently from another selected from the group consisting of B and N; Z is a direct bond; R.sup.I, R.sup.II, R.sup.III, R.sup.IV, R.sup.V, R.sup.VI, R.sup.VII, R.sup.VIII, R.sup.IX, and R.sup.X are at each occurrence independently from another selected from the group consisting of the binding site of a single bond linking the first chemical moiety to the second moiety, and R*; R* is at each occurrence independently from another selected from the group consisting of hydrogen, deuterium, OPh, SPh, CF.sub.3, CN, F, Si(C.sub.1-C.sub.5-alkyl).sub.3, Si(Ph).sub.3, C.sub.1-C.sub.5-alkyl, C.sub.1-C.sub.5-alkoxy, C.sub.1-C.sub.5-thioalkoxy, C.sub.2-C.sub.5-alkenyl, C.sub.2-C.sub.5-alkynyl, C.sub.6-C.sub.18-aryl, C.sub.3-C.sub.17-heteroaryl, N(C.sub.6-C.sub.18-aryl).sub.2, N(C.sub.3-C.sub.17-heteroaryl).sub.2; N(C.sub.3-C.sub.17-heteroaryl)(C.sub.6-C.sub.18-aryl); and the dashed lines represent the binding sites of the first chemical moiety to the second chemical moiety.

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