According to an embodiment, a manufacturing method allows the manufacture of a display device including a partition including a lower portion provided on a rib including a pixel aperture and an upper portion protruding from a side surface of the lower portion. The method includes forming a lower electrode, forming a rib layer, forming a lower layer, forming an upper layer, forming a resist, forming the rib by a first etching process, forming the upper portion by a second etching process after the first etching process, and forming the lower portion by a third etching process after the second etching process.

The present invention relates to an inorganic perovskite quantum dot-based solar cell capable of providing a significantly excellent photoelectric conversion efficiency compared to the related art by increasing a light absorption capacity even though a photoactive layer has a limited thickness. Specifically, the inorganic perovskite solar cell may include: an electron transport layer that is disposed on a transparent electrode; a photoactive layer having a flat structure that is disposed on the electron transport layer and includes inorganic perovskite quantum dots; an organic hole transport layer that is disposed on the photoactive layer and includes nanopatterns; and a back electrode that is disposed on the organic hole transport layer.

The present invention relates to an inorganic perovskite quantum dot-based solar cell capable of providing a significantly excellent photoelectric conversion efficiency compared to the related art by increasing a light absorption capacity even though a photoactive layer has a limited thickness. Specifically, the inorganic perovskite solar cell may include: an electron transport layer that is disposed on a transparent electrode; a photoactive layer having a flat structure that is disposed on the electron transport layer and includes inorganic perovskite quantum dots; an organic hole transport layer that is disposed on the photoactive layer and includes nanopatterns; and a back electrode that is disposed on the organic hole transport layer.

An increase in voltage of a light-emitting device manufactured through a step of forming an aluminum oxide film in contact with an organic compound layer is inhibited. An organic compound film is formed over a first electrode. An organic mask film containing an organic compound which has low solubility to water or a chemical solution including water as a solvent is formed over the organic compound film. An inorganic mask layer is formed over the organic mask film. Shapes of the organic mask film and the organic compound film are processed with the use of the inorganic mask layer, whereby an organic mask layer and an organic compound layer are formed. At least parts of the inorganic mask layer and the organic mask layer are removed with the use of water or a liquid including water as a solvent.

A method of fabricating a display device may include forming a preliminary first pixel definition layer by coating a first material on a base substrate including a first electrode, forming a first pixel definition layer by forming a first opening in the preliminary first pixel definition layer, the first opening exposing the first electrode, performing a plasma treatment on the first pixel definition layer, forming a preliminary organic layer by providing a first organic material, forming a preliminary second pixel definition layer by coating a second material on the first pixel definition layer, forming a second pixel definition layer by forming a second opening in the preliminary second pixel definition layer, the second opening overlapping with the first opening, and forming an organic layer by providing a second organic material. A thickness of the organic layer may be greater than a thickness of the preliminary organic layer.

A display substrate includes: a wafer base (1) provided with a transistor; a metal reflective structure (2) on the wafer base, the metal reflective structure being electrically connected to the transistor, and being provided with a protrusion (21) protruding away from the wafer base; a first insulation layer (3) on a side of the metal reflective structure away from the wafer base, a surface of a portion of the first insulation layer corresponding to the metal reflective structure and facing away from the metal reflective structure being flush with a top face of the protrusion; and a transparent anode (4) on a side of the first insulation layer facing away from the metal reflective structure, the transparent anode being in contact connection with the top face of the protrusion.

A display substrate includes: a wafer base (1) provided with a transistor; a metal reflective structure (2) on the wafer base, the metal reflective structure being electrically connected to the transistor, and being provided with a protrusion (21) protruding away from the wafer base; a first insulation layer (3) on a side of the metal reflective structure away from the wafer base, a surface of a portion of the first insulation layer corresponding to the metal reflective structure and facing away from the metal reflective structure being flush with a top face of the protrusion; and a transparent anode (4) on a side of the first insulation layer facing away from the metal reflective structure, the transparent anode being in contact connection with the top face of the protrusion.

A display panel and a preparation method thereof and a display apparatus are provided. The display panel includes a display region. The display region includes a first display region. The display panel further includes a first film located in the first display region, the first film includes at least one mark group, and each mark group includes multiple marks. In the technical solution provided, the mark group included in the first film is just etching traces of laser etching in the process of display panel preparation, and multiple marks are included in the mark group.

The present disclose is related to an array substrate. The array substrate may include a base substrate; a driving transistor on the base substrate; an insulating layer on the driving transistor, the insulating layer comprising a via hole above a first electrode of the driving transistor; a conductive portion on the insulating layer; and a light emitting device on the conductive portion and electrically connected to the conductive portion. The conductive portion may be electrically connected to the first electrode of the driving transistor through the via hole. The light emitting device may be above the via hole, and an orthographic projection of the light emitting device on the base substrate may cover an orthographic projection of the via hole on the base substrate.

A display apparatus includes a substrate including a first area, a second area, and a third area. The first area faces a first direction. The second area extends from the first area and faces a second direction different from the first direction. The third area is disposed between the first area and the second area. A display element is arranged in the first area. A bending-protecting layer is arranged in the third area and is disposed outside of the first area. A thickness of the substrate in the third area is less than a thickness of the substrate in the first area.