A display panel includes a transparent substrate and a light emitting function layer and a color resist layer formed on the transparent substrate. The transparent substrate has a light emitting region and a non-light emitting region. The light-emitting functional layer is located at a side of the transparent substrate and includes a transistor and an organic light emitting device. The transistor is formed on the non-light-emitting region. The color resist layer is located on a side of the transparent substrate away from the light-emitting function layer. The color resist layer includes a black matrix formed on the non-light-emitting region and a color filter formed on the light-emitting region. Light emitted by the organic light-emitting device is emitted through the light-emitting region of the transparent substrate and the color filter in sequence.

An array substrate, a display panel, and a display device are disclosed. The array substrate includes a substrate and an array functional layer. The array substrate is provided with a through hole area including a through hole, a buffer area provided around the through hole area, and a display area provided around the buffer area. The buffer area includes part of the substrate and an inorganic film layer provided by the array functional layer. At least a groove is formed in the inorganic film layer around the through hole area, and the groove has a closed ring shape or a non-closed ring shape.

Disclosed are an array substrate and a fabricating method therefor, a display panel, and a display device, and relating to the technical field of display. The method comprises: forming a patterned film layer on one side of a substrate, the patterned film layer comprising a plurality of recesses; and palcing a first precursor structure in the recesses, and the material of the first precursor structure comprises a first precursor; and placeing in the environment of a gaseous second precursor the substrate having the first precursor structure formed thereon to cause the reaction between the gaseous second precursor and the first precursor structure to form a perovskite crystal structure, wherein one of the first precursor and the second precursor comprises a metal halide, and the other comprises one of a formamidine halide, a methylamine halide, a cesium halide, and hydrogen sulfide, thereby achieving the manufacture of a perovskite microarray structure.

The present invention is directed to a method for preparing a device, the method comprising: forming a first layer on top of a first electrode, the layer comprising a metal oxide that is formed by the deposition of a metal oxide precursor composition that can be directly patterned by means of exposure to electromagnetic radiation to form a patterned metal oxide layer, optionally forming a second electrode over the first device layer, wherein the method further includes optionally forming a layer comprising quantum dots on top of the first layer or after formation of the first layer, and to a device comprising a first layer comprising a metal oxide prepared by the method of the invention.

A method of manufacturing microstructure array, a microstructure array, a micro-light-emitting diode, and a method for manufacturing the same, and a display device. The method of manufacturing microstructure array includes: preparing a red light-emitting perovskite precursor solution, a green light-emitting perovskite precursor solution, and a blue light-emitting perovskite precursor solution; coating the red light-emitting perovskite precursor solution, the green light-emitting perovskite precursor solution, and the blue light-emitting perovskite precursor solution, on a substrate having partitioned first, second, and third regions to form a red light-emitting perovskite precursor film, a green light-emitting perovskite precursor film, and a blue light-emitting perovskite precursor film, respectively; disposing a mold having a plurality of concave micropatterns on the red light-emitting perovskite precursor film, the green light-emitting perovskite precursor film, and the blue light-emitting perovskite precursor film, respectively; heat-treating the red light-emitting perovskite precursor film, the green light-emitting perovskite precursor film, and the blue light-emitting perovskite precursor film in a plurality of concave micropatterns to obtain each of red light-emitting perovskite nanocrystals, green light-emitting perovskite nanocrystals, and blue light-emitting perovskite nanocrystals, and removing the mold to form a microstructure array.

A photoelectric conversion device includes: a substrate; a first photoelectric conversion element including a first substrate electrode, a first active layer and a first counter electrode; a second photoelectric conversion element including a second substrate electrode, a second active layer, and a second counter electrode; and a connection connecting the first counter electrode and the second substrate electrode. The second active layer is represented by a composition formula: A.sub.αBX.sub.χ, where A denotes at least one cation selected from monovalent cations, B denotes at least one cation selected from bivalent cations, and X denotes at least one ion selected from monovalent halogen ions; and the second active layer has a first and a second compound layer, the first compound layer containing a first compound satisfying 0.95≤α, and 2.95≤χ, and the second compound layer containing a second compound satisfying α<0.95, and χ<2.95.

An apparatus for manufacturing a display device includes a chamber in which a display substrate is arranged, a lamp portion arranged outside or inside the chamber irradiating light, and a mask arranged inside the chamber to expose a portion of the display substrate and to shield another portion of the display substrate. The mast includes a hole through which the light irradiated from the lamp portion passes, and the lamp portion includes a flash lamp or a xenon lamp.

An organic thin film transistor includes a gate electrode, an organic semiconductor layer overlapped with the gate electrode, a hydrophilic nanolayer on the organic semiconductor layer, and a source electrode and a drain electrode electrically connected to the organic semiconductor layer.

Self-organizing patterns with micrometer-scale feature sizes are promising for the large area fabrication of photonic devices and scattering layers in optoelectronics. Pattern formation would ideally occur in the active semiconductor to avoid the need for further processing steps. The present disclosure includes approaches to form period patterns in single layers of organic semiconductors by an annealing process. When heated, a crystallization front propagates across the film, producing a sinusoidal surface structure with wavelengths comparable to that of near-infrared light. These surface features form initially in the amorphous region within a micron of the crystal growth front, likely due to competition between crystal growth and surface mass transport. The pattern wavelength can be tuned by varying film thickness and annealing temperature, millimeter scale domain sizes are obtained. Aspects of the disclosure can be exploited for self-assembly of microstructured organic optoelectronic devices, for example.

The present invention provides a silicon-based micro display screen and method for manufacturing the same. The method includes following steps: providing a silicon substrate, defining a number of sub-pixel regions on the silicon substrate, and sequentially and respectively preparing an anode layer, an OLED layer, a cathode layer and a first protective layer in each sub-pixel region on the silicon substrate; plasma bombarding and removing the exposed OLED layer; forming a second protective layer on sides of the etched cathode layer, the protective layer and the OLED layer; sequentially performing other sub-pixels; and processing and forming a silicon-based micro-display screen based on the results of the above steps. In present invention, the etching and coating processes are carried out in a vacuum environment to prevent the OLED layer from being invaded by water vapor and oxygen, and prolong the service life of the silicon-based micro display screen.