A pixel defining structure includes a first sub-pixel defining structure surrounding a first sub-pixel region configured to form a first sub-pixel having a first color. The first sub-pixel defining structure includes a lyophilic portion one the bottom side of the first sub-pixel region and a lyophobic portion on a side opposite to the bottom side. The pixel defining structure includes a second sub-pixel defining structure surrounding a second sub-pixel region configured to form a second sub-pixel having a second color. The second sub-pixel defining structure includes a lyophilic portion one the bottom side of the second sub-pixel region and a lyophobic portion on a side opposite to the bottom side. The second color is different from the first color. Thicknesses of the lyophilic portion of the first sub-pixel defining structure and the lyophilic portion of the second sub-pixel defining structure are different.

A photoelectric conversion device in an embodiment includes a first photoelectric conversion part including a first transparent electrode, a first photoelectric conversion layer, and a first counter electrode and a second photoelectric conversion part including a second transparent electrode, a second photoelectric conversion layer, and a second counter electrode, the first photoelectric conversion part and the second photoelectric conversion part being provided on a transparent substrate. The first counter electrode and the second transparent electrode are electrically connected by a connection part. As for the first photoelectric conversion layer and the second photoelectric conversion layer, adjacent portions of the adjacent first and second photoelectric conversion layers are electrically separated by an inactive region having electrical resistance higher than that of the first and second photoelectric conversion layers.

Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

An organic photovoltaic device comprises a substrate, a reflector positioned over the substrate, a first electrode positioned over at least a first portion of the reflector, a polaritonic antenna layer positioned over a second portion of the reflector different from the first portion, electrically connected to the first electrode, and at least one unit reaction cell positioned over at least part of the first electrode, the at least one unit reaction cell comprising a heterojunction layer comprising a donor material and an acceptor material, positioned over the first electrode, and a second electrode positioned over the heterojunction, wherein the polaritonic antenna and the reflector are configured to convert incoming photonic energy to polaritons. A method of fabricating an organic photovoltaic device is also disclosed.

A method of patterning quantum dot layer includes: forming, on a substrate, a film layer including a photosensitive material and quantum dots with ligands on surfaces of the quantum dots; irradiating a quantum dot reserved area with light of a preset wavelength; where under irradiation with light of the preset wavelength, the photosensitive material or a product of the photosensitive material after light irradiation reacts with the ligands on the surfaces of the quantum dots, to allow the ligands to fall off from the surfaces of the quantum dots, so that solubility of the quantum dots is changed to cause the quantum dots to undergo coagulation; and removing a portion of the film layer which is not irradiated by the light of the preset wavelength, to form a patterned quantum dot portion of the quantum dot layer in the quantum dot reserved area.

A method of patterning quantum dot layer includes: forming, on a substrate, a film layer including a photosensitive material and quantum dots with ligands on surfaces of the quantum dots; irradiating a quantum dot reserved area with light of a preset wavelength; where under irradiation with light of the preset wavelength, the photosensitive material or a product of the photosensitive material after light irradiation reacts with the ligands on the surfaces of the quantum dots, to allow the ligands to fall off from the surfaces of the quantum dots, so that solubility of the quantum dots is changed to cause the quantum dots to undergo coagulation; and removing a portion of the film layer which is not irradiated by the light of the preset wavelength, to form a patterned quantum dot portion of the quantum dot layer in the quantum dot reserved area.

The present disclosure relates to a photolithography process method and a display device manufactured thereby, and more particularly, to a photolithography process method using a quantum dot thin film having greatly improved resistance to an organic solvent by applying a quantum dot coated with ligand onto a substrate and injecting a precursor used in atomic layer deposition, and a display manufactured thereby.

According to an aspect, a display device includes: a substrate; a planarization layer provided on the substrate; a plurality of electrodes provided on the planarization layer and arrayed in a first direction and a second direction; a bank provided on the planarization layer and the electrodes and formed in a grid pattern so as to surround each of the electrodes; and a light-emitting layer provided on the electrodes. The bank protrudes with respect to the electrodes in a third direction orthogonal to the first direction and the second direction, and a cutout is formed in part of the bank.

An embodiment of the present application provides a preparation method of a mask assembly, including: fixing, after stretching and aligning a blocking, the blocking on a side of a frame; opening at least one stretching align hole and at least one evaporation align mark in the fixed blocking and frame; fixing, after stretching and aligning a mask sheet, the mask sheet on a side of the blocking away from the frame according to the stretching align hole; and opening at least one evaporation align mark in the fixed mask sheet to obtain the mask assembly.

According to one embodiment, a manufacturing method of a display device includes providing a processing substrate in which a lower electrode is formed on a stage inside a chamber, forming a first insulating layer overlapping the lower electrode in a state where a first distance is formed between the stage and a counter-electrode, and subsequently forming a second insulating layer on the first insulating layer in a state where a second distance greater than the first distance is formed between the stage and the counter-electrode, forming a rib by patterning the first insulating layer and the second insulating layer, forming a partition, forming an organic layer, forming an upper electrode, forming a cap layer, and forming a sealing layer.