To provide a display device including a light emitting element layer including an anode electrode, a light emissive layer formed on the anode electrode, and a cathode electrode formed on the light emissive layer, and a bank formed on the lower electrode and having an opening, in which the lower electrode is partially exposed, wherein the light emissive layer includes a p-doped hole transport layer containing p-dopant, and the p-doped hole transport layer contains a larger amount of p-dopant in an area close to an end portion of the opening of the bank than the amount of p-dopant contained in other areas.

The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

A metal complex is disclosed. In an embodiment a metal complex includes at least one metal atom M and at least one ligand L attached to the metal atom M, wherein the ligand L has the following structure:

##STR00001## wherein E.sup.1 and E.sup.2 are oxygen, wherein the substituent R.sup.1 is selected from the group consisting of branched or unbranched, fluorinated aliphatic hydrocarbons with 1 to 10 C atoms, wherein n=1 to 5, wherein the substituent R.sup.2 is selected from the group consisting of branched or unbranched aliphatic hydrocarbons with 1 to 10 C atoms, aryl and heteroaryl, wherein m>0 to at most 5−n, and wherein the metal M is a main group metal of groups 13 to 15 of the periodic table of elements.

A compound represented by the formula (1) is provided: ##STR00001##
wherein A.sup.1 represents an oxygen atom, a sulfur atom, —NR.sup.5— or —PR.sup.5—; at least one A.sup.1 is —NR.sup.5— or —PR.sup.5—; R.sup.1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, a cycloalkoxy group, an aryloxy group, an alkylsulfenyl group, a cycloalkylsulfenyl group, an arylsulfenyl group or a disubstituted amino group; R.sup.2 and R.sup.3 represent an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, a cycloalkoxy group, an aryloxy group, an alkylsulfenyl group, a cycloalkylsulfenyl group, an arylsulfenyl group, a monovalent heterocyclic group, a halogen atom or a disubstituted amino group; R.sup.4 represents a hydrogen atom, —C(R.sup.6).sub.3, —OR.sup.7, —N(R.sup.7).sub.2 or —Si(R.sup.7).sub.3; m represents an integer of 0 to 3; and n represents an integer of 0 to 4.

The present invention relates to an ink composition for an organic light emitting device that can be applied to an inkjet process. The ink composition comprises a compound represented by the following Chemical Formula 1, a first solvent of aromatic esters having a boiling point of 260 to 400° C., and a second solvent of aliphatic ethers or aliphatic esters having a boiling point of 200 to 400° C., wherein the boiling point of the first solvent is higher than that of the second solvent. When this is applied to an inkjet process, it can form a flat film with a smooth surface when dried after forming the ink film.

##STR00001##

wherein L, L.sub.1 to L.sub.4, Ar.sub.1, Ar.sub.2, R.sub.1 to R.sub.4, Y.sub.1 to Y.sub.4, and n.sub.1 to n.sub.4 are described herein.

A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.

The display panel includes a plurality of light-emitting areas and a plurality of non-light-emitting areas, the plurality of light-emitting areas being space apart from each other by the plurality of non-light-emitting area; light-emitting elements each located in one of the plurality of light-emitting areas and including an anode and a cathode that are opposite to each other, and a light-emitting layer located therebetween; a cover layer covering a light-emission side of the light-emitting element. The cover layer includes a substrate and first dopants doped in the substrate, the first dopants are magnetic. When an external magnetic field intensity applied to the cover layer is changed by an amount greater than a preset magnetic field intensity, the first dopants in the substrate are rearranged from a first mode to a second mode.

A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.

A photoelectric conversion element including: a first electrode; a perovskite layer; a hole-transporting layer; and a second electrode, wherein the hole-transporting layer includes a compound represented by General Formula (1) or (1a) below;

##STR00001## where M represents an alkali metal; X.sub.1 and X.sub.2, which may be identical to or different from each other, each represent at least one selected from the group consisting of a carbonyl group, a sulphonyl group, and a sulfinyl group; and X.sub.3 represents at least one selected from the group consisting of a bivalent alkyl group, an alkenyl group, and an aryl group, and a hydrogen atom of the bivalent alkyl group, the alkenyl group, and the aryl group may be substituted with a halogen atom;

##STR00002## where M.sup.+ represents an organic cation; and X.sub.1, X.sub.2, and X.sub.3 have the same meanings as X.sub.1, X.sub.2, and X.sub.3 in the General Formula (1).

Methods for determining desired doping conditions for a semiconducting single-walled carbon nanotube (s-SWCNT) are provided. One exemplary method includes doping each of a plurality of s-SWCNT networks under a respective set of doping conditions; determining a thermoelectric (TE) power factor as a function of a fractional bleach of an absorption spectrum for the plurality of s-SWCNT networks doped under the respective sets of doping conditions; and using the function to identify one of the TE power factors within a range of the fractional bleach of the absorption spectrum. The identified TE power factor corresponds to the desired doping conditions.