An organic optoelectronic device comprises a first electrode, a first carrier transport layer, an active layer, a second carrier transport layer and a second electrode. The first electrode is a transparent electrode. The active layer includes a low band gap small molecule material which includes a structure of Formula I:

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Wherein, o, m, n, p, x and y are independently selected from any integer from 0 to 2. Ar.sup.0, Ar.sup.1 and A.sup.2 are electron-donating groups. A.sup.0 is a heteroatom-containg tricyclic structure with or without substituents, and. the heteroatom comprises at least one of S, N, Si, and Se. A.sup.1 is an electron withdrawing group with or without substituents, and the structure of the electron-withdrawing group comprises at least one of S, N, Si, Se, C═O, —CN, SO.sub.2. The organic optoelectronic device of the present invention has good external quantum efficiency and dark current performance.

A light receiving element includes a first electrode, a hole transport region disposed on the first electrode, a light receiving layer disposed on the hole transport region and converting incident light to an electrical signal, an electron transport region disposed on the light receiving layer, and a second electrode disposed on the electron transport region. The light receiving layer includes a p-dopant compound, a donor compound, and an acceptor compound.

A method of p-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a layered structure, wherein the layered structure is a tungsten diselenide film or a black phosphorus film; and p-type doping at least one portion of the carbon nanotube by covering the carbon nanotube with the layered structure.

A method of p-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a layered structure, wherein the layered structure is a tungsten diselenide film or a black phosphorus film; and p-type doping at least one portion of the carbon nanotube by covering the carbon nanotube with the layered structure.

The invention relates to a method for manufacture of an electrical contact on a structure (10) made of an anisotropic material NA which exhibits an anisotropic electrical conductivity, where the structure (10) exhibits an axial electrical conductivity along a first axis XX′ of the structure (10) and an orthogonal conductivity along a direction YY′ orthogonal to the first axis XX′ of the structure (10), where the orthogonal conductivity is less than the axial conductivity, where the method comprises: a step for the formation of a conductive electrode (20), with an initial thickness Ei, comprising a species M, on a first surface (30) of the structure (10), where the first surface (30) is orthogonal to the orthogonal direction YY′; the method being characterized in that the step for the formation of the conductive electrode (20) is followed by a step for implantation of species X through the conductive electrode (20), into the structure (10).

A mixed layer including: a matrix material; and a dopant composition, wherein the dopant composition is doped in the matrix material, the dopant composition comprises a first dopant and a second dopant, an amount by weight of the matrix material is greater than an amount by weight of the dopant composition in the mixed layer, the matrix material, the first dopant, and the second dopant are different from each other, the matrix material does not include a transition metal, the first dopant includes a transition metal, the mixed layer is a layer formed by deposition of the matrix material, the first dopant, and the second dopant, the mixed layer has a concentration profile of the dopant composition with respect to a thickness of the mixed layer, provided that T.sub.m1>T.sub.p>T.sub.m1+2 is satisfied, wherein T.sub.m1, T.sub.p, and T.sub.m1+2 are respectively as described herein.

A mixed layer including: a matrix material; and a dopant composition, wherein the dopant composition is doped in the matrix material, the dopant composition comprises a first dopant and a second dopant, an amount by weight of the matrix material is greater than an amount by weight of the dopant composition in the mixed layer, the matrix material, the first dopant, and the second dopant are different from each other, the matrix material does not include a transition metal, the first dopant includes a transition metal, the mixed layer is a layer formed by deposition of the matrix material, the first dopant, and the second dopant, the mixed layer has a concentration profile of the dopant composition with respect to a thickness of the mixed layer, provided that T.sub.m1>T.sub.p>T.sub.m1+2 is satisfied, wherein T.sub.m1, T.sub.p, and T.sub.m1+2 are respectively as described herein.

A compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel including the compound, and an electronic device including the compound.

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In Chemical Formula 1, X.sup.1, X.sup.2, X.sup.3, Ar.sup.1, L.sup.1, A, R1, and R.sup.2 are the same as in the specification.

A compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel including the compound, and an electronic device including the compound.

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In Chemical Formula 1, X.sup.1, X.sup.2, X.sup.3, Ar.sup.1, L.sup.1, A, R1, and R.sup.2 are the same as in the specification.

An organic light emitting display device may include a substrate, a first pixel electrode on the substrate, a pixel defining layer on the substrate, the pixel defining layer having an opening exposing a portion of the first pixel electrode, a second pixel electrode on the portion of the first pixel electrode exposed by the opening, a hole injection layer on the second pixel electrode, the hole injection layer including a metal oxide, an organic light emitting layer on the hole injection layer; and a common electrode on the organic light emitting layer.