A method includes placing a first charged metal dot on a first position of a surface of a semiconductor substrate. A first charged region is formed on a second position of the surface of the semiconductor substrate. A precursor gas is flowed along a first direction from the first position toward the second position on the semiconductor substrate, thereby forming a first carbon nanotube (CNT) on the semiconductor substrate. A dielectric layer is deposited to cover the first CNT and the semiconductor substrate. A second charged metal dot is placed on a third position of a surface of the dielectric layer. A second charged region is formed on a fourth position of the surface of the dielectric layer. The precursor gas is flowed along a second direction from the third position toward the fourth position on the semiconductor substrate, thereby forming a second CNT on the first CNT.

The present invention relates to a semiconducting material comprising an electron transport matrix compound comprising at least one electron transporting structural moiety and at least one polar structural moiety; a matrix compound and electronic device utilizing the semiconducting material.

The present invention relates to an electronic device comprising at least one light emitting layer between an anode and a substantially silver cathode, the device further comprising between the cathode and the anode at least one mixed layer comprising (i) at least one substantially covalent electron transport matrix compound comprising at least one polar group selected from phosphine oxide group or diazole group, and (ii) in substantially elemental form, an electropositive element selected from substantially non-radioactive alkali metals, alkaline earth metals, rare earth metals, and transition metals of the fourth period of the Periodic table having proton numbers 22, 23, 24, 25, 26, 27, 28, 29.

The present invention relates to oxocarbon-, pseudooxocarbon- and radialene compounds as well as to their use as doping agent for doping an organic semiconductive matrix material, as blocker material, as charge injection layer, as electrode material as well as organic semiconductor, as well as electronic components and organic semiconductive materials using them.

A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.

An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability with a convenient process, where the n-type semiconductor element includes: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer for insulating the semiconductor layer from the gate electrode; and a second insulating layer positioned on the opposite side of the semiconductor layer from the gate insulating layer and in contact with the semiconductor layer, where the semiconductor layer contains nanocarbon, and the second insulating layer contains (a) a compound with an ionization potential in vacuum of 7.0 eV or less, and (b) a polymer.

A metal complex is disclosed. In an embodiment a metal complex includes at least one metal atom M and at least one ligand L attached to the metal atom M, wherein the ligand L has the following structure: ##STR00001## wherein E.sup.1 and E.sup.2 are oxygen, wherein the substituent R.sup.1 is selected from the group consisting of branched or unbranched, fluorinated aliphatic hydrocarbons with 1 to 10 C atoms, wherein n=1 to 5, wherein the substituent R.sup.2 is selected from the group consisting of branched or unbranched aliphatic hydrocarbons with 1 to 10 C atoms, aryl and heteroaryl, wherein m>0 to at most 5−n, and wherein the metal M is a main group metal of groups 13 to 15 of the periodic table of elements.

A metal complex is disclosed. In an embodiment a metal complex includes at least one metal atom M and at least one ligand L attached to the metal atom M, wherein the ligand L has the following structure: ##STR00001## wherein E.sup.1 and E.sup.2 are oxygen, wherein the substituent R.sup.1 is selected from the group consisting of branched or unbranched, fluorinated aliphatic hydrocarbons with 1 to 10 C atoms, wherein n=1 to 5, wherein the substituent R.sup.2 is selected from the group consisting of branched or unbranched aliphatic hydrocarbons with 1 to 10 C atoms, aryl and heteroaryl, wherein m>0 to at most 5−n, and wherein the metal M is a main group metal of groups 13 to 15 of the periodic table of elements.

Provided is an organic electroluminescent device. The organic electroluminescent device comprises a first electrode, a second electrode, and at least two light emitting units disposed between the first electrode and the second electrode, wherein the light emitting units each comprises at least one light emitting layer, and a connection layer of a specific structure is further disposed between adjacent two light emitting units. By using a connection layer of a specific structure, the organic light-emitting device reduces the device voltage, prolongs life time of the device, and improves the device performance.

Provided is an organic electroluminescent device. The organic electroluminescent device comprises a first electrode, a second electrode, and at least two light emitting units disposed between the first electrode and the second electrode, wherein the light emitting units each comprises at least one light emitting layer, and a connection layer of a specific structure is further disposed between adjacent two light emitting units. By using a connection layer of a specific structure, the organic light-emitting device reduces the device voltage, prolongs life time of the device, and improves the device performance.