The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib). ##STR00001##

A photoelectric conversion element including a first electrode and a second electrode that are disposed to face each other and a photoelectric conversion layer that is provided between the first electrode and the second electrode. The photoelectric conversion layer contains at least a subphthalocyanine or a subphthalocyanine derivative, and a carrier dopant, in which the carrier dopant has a concentration of less than 1% by volume ratio to the subphthalocyanine or the subphthalocyanine derivative.

The present disclosure provides an organic electroluminescent device, a display substrate including the organic electroluminescent device, and a display apparatus including the display substrate. The organic electroluminescent device includes an anode, a cathode, and a light emitting layer between the anode and the cathode, wherein a hole transport layer is provided between the anode and the light emitting layer and includes a hole transport material and a P-type doping material, electrons of the highest occupied molecular orbit of the P-type doping material are excitable to the lowest unoccupied molecular orbit of the P-type doping material under the excitation of light to cause an electron transfer reaction from the highest occupied molecular orbit of the hole transport material to the highest occupied molecular orbit of the P-type doping material.

In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure including carbon nanotubes (CNTs) embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an interlayer dielectric (ILD) layer is formed over the doped source/drain region and the sacrificial gate structure, a source/drain opening is formed by patterning the ILD layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.

An optoelectronic device that includes a substrate and a stack of organic layers that has at least one active layer arranged between a reflective surface and a semi-reflective surface arranged facing one another at a given distance and forming an optical cavity. The device includes at least three groups of pixels, each group of which is characterized by a cavity of a different optical length, the cavity having a number of bilayers arranged between the substrate and said stack of organic layers, each bilayer being formed of a first transparent and conductive layer of a first transparent and conductive material, and of a second transparent and conductive layer of a second transparent and conductive material, in direct contact with the first transparent and conductive layer.

An optoelectronic device that includes a substrate and a stack of organic layers that has at least one active layer arranged between a reflective surface and a semi-reflective surface arranged facing one another at a given distance and forming an optical cavity. The device includes at least three groups of pixels, each group of which is characterized by a cavity of a different optical length, the cavity having a number of bilayers arranged between the substrate and said stack of organic layers, each bilayer being formed of a first transparent and conductive layer of a first transparent and conductive material, and of a second transparent and conductive layer of a second transparent and conductive material, in direct contact with the first transparent and conductive layer.

This invention is related to a new treatment process employed during preparation of the ZnO ETL in a QDLED. The treatment involves exposing the ZnO layer to fluorine (F). In embodiments of this invention, the exposure of the ZnO layer to the F is performed using a fluorine plasma environment (e.g., using CF.sub.4, CHF.sub.3, C.sub.4F.sub.8 or SF.sub.6). Alternatively, the F exposure may be done by exposing the ZnO ETL to a suitable fluorine-containing substance such as fluorine gas or fluorinated solvents. The F plasma treatment of the ZnO improves both QDLED device EQE and EL stability.

This invention is related to a new treatment process employed during preparation of the ZnO ETL in a QDLED. The treatment involves exposing the ZnO layer to fluorine (F). In embodiments of this invention, the exposure of the ZnO layer to the F is performed using a fluorine plasma environment (e.g., using CF.sub.4, CHF.sub.3, C.sub.4F.sub.8 or SF.sub.6). Alternatively, the F exposure may be done by exposing the ZnO ETL to a suitable fluorine-containing substance such as fluorine gas or fluorinated solvents. The F plasma treatment of the ZnO improves both QDLED device EQE and EL stability.

A method of n-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a film-like structure, wherein the film-like structure is a molybdenum disulfide film or a tungsten disulfide film; and converting at least one portion of the carbon nanotube from a p-type to an n-type by covering the carbon nanotube with the film-like structure.

A method of n-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a film-like structure, wherein the film-like structure is a molybdenum disulfide film or a tungsten disulfide film; and converting at least one portion of the carbon nanotube from a p-type to an n-type by covering the carbon nanotube with the film-like structure.